DIODE BAS 21 Search Results

a2 marking

Abstract: Q62702-A1066 Marking Code to on semiconductor 720
Contextual Info: SIEMENS Silicon Schottky Diode BAS 40W • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing Type BAS 40-04W BAS 40-05W BAS 40-06W Ordering Code tape and reel 1 2 3 Q62702-A1065

Contextual Info: BAS 21-03W Silicon Switching Diode Preliminary data 2 • For high-speed switching applications 1 • High breakdown voltage VPS05176 Type Marking Pin Configuration Package BAS 21-03W D 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: BAS 21-03W Silicon Switching Diode Preliminary data 2
For high-speed switching applications 1
High breakdown voltage VPS05176 Type Marking Pin Configuration Package BAS 21-03W D 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR

Q62702-A77

Abstract: EHA07008
Contextual Info: SIEMENS Silicon Switching Diode Array BAS 28 • For high-speed switching • Electrically insulated diodes Type Marking Ordering Code tape and reel BAS 28 JTs Q62702-A77 Pin Configuration * Package1) 1 SOT-143 r ^ i o- pH-° 3 i o 2 0 - ^ - O

Contextual Info: BAS 19 . 21 Surface Mount Silicon Planar Small-Signal Diode Silizium-Planar-Diode für die Oberflächenmontage Nominal current – Nennstrom 200 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 85 V Plastic case Kunststoffgehäuse SOT-23

SC74

Abstract: JSs diode
Contextual Info: BAS 21U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74

Q62702-A3468

Abstract: VPS05604
Contextual Info: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection 6 • Voltage clamping • High-level detecting and mixing 2 1 3 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Single Emitter Diode Lasers cw, passively cooled JOLD-8-BAS-1E Design 215712124 Features: Applications: • High optical output power of 8 W cw

Q62702A1072

Abstract: BAS170W
Contextual Info: SIEMENS BAS 170W Silicon Schottky Diode • • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Small package SOD-323 ESP: Electrostastic discharge sensitive device, observe handlirig precautions!

SOD323 ESD

Abstract: Q62702-A1072 BAS170W
Contextual Info: BAS 170W Silicon Schottky Diode l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and mixing l Small package SOD-323 ESD: Electrostastic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS BAS 170W Silicon Schottky Diode • • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Small package SOD-323 ESP: Electrostastic discharge sensitive device, observe handling précautions!

MARKING 74s

Abstract: PF 7004S
Contextual Info: SIEMENS BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 • Circuit protection • Voltage clamping • High-level detecting and mixing n y W C 1/A 2 C2 R n fi è 3 2 A1 1 VPS05604 ESD: Electrostatic discharge sensitive device, observe handling precautions!

C4 Package

Abstract: VPS05604 diode array MARKING A3
Contextual Info: BAS 70-04S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 2 C1/A2 C3 A4 6 5 4 D2 D1 3 1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: PLESSEY SEMICOND/DISCRETE 03 DE J 7 2 2 0 5 3 3 □oDbSbb □ I BAS 19 B AS20 BAS21 High speed switching diode - ¿3-0f - A B S O LU T E M A X IM U M RATINGS Parameter Symbol B A S 19 BAS20 B A S 21 Continuous reverse voltage Vr 100 150 200 V Repetitive peak reverse voltage

BAS 20 SOT23

Abstract: DIODE BAS 21 sot-23 JSs
Contextual Info: BAS 19 . BAS 21 Silicon Switching Diodes 3
High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C

marking JSs

Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

Contextual Info: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708

Contextual Info: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch Type M arking O rdering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin C onfigu ratio n Package1) 1 r^ i 3 o-^ 1 -o

Contextual Info: SIEMENS Silicon Switching Diodes BAS 19 . BAS 21 • High-speed, high-voltage switch T yp e M arking O rdering C o d e tape and reel B A S 19 B A S 20 BAS 21 JPs JR s JSs Q62702-A95 Q62702-A113 Q62702-A79 Pin Configuration P a ck a g e1» 1-^ IsJ-0

BAY99

Abstract: BAW56 Diode BAV99 SOT23 BAV70 BAY70 3PIR BAS16 BAV99 MJ marking sot23 LFL 2.25
Contextual Info: Surface M o u n t S w itching Diode SW ITCH IN G DIODE 200-215m AM PERRES 70-75 VOLTS F eatu res: *Low C urrent Leakage *Low Forward Voltage "Reverse Recover Tim e T r r* 6 n s *S m all O utline Surface M ount SOT-23 Package SOT-23 O u tlin e Dimensions unit:mm

diodes b

Abstract: AS21
Contextual Info: Silicon Switching Diodes • B AS 19 B AS 21 High-speed, high-voltage switch Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A S 19 B A S 20 B A S 21 JP JR JS Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95

Contextual Info: DISCRETE SEMICONDUCTORS GMTâ SlnlEET BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 Philips Semiconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification General purpose controlled avalanche

C20 diode, TO

Abstract: 10 35 DIODE diode 5V6 DIODE 748 DIODE zener diode c20 diode zener c2 6 FMMD2837 C2 6 zener diode c20 diode
Contextual Info: SOT-23 TR A N S IS T O R S & D IO D ES SILICON ABRIJPT TUNER D ODES Type FMMV2101 FM M V2102 FM M V 2103 F M M V 2104 F M M V 2105 FM M V 2106 FM M V 2107 FM M V 2108 F M M V 2109 Reverse breakdown Voltage V R Volts max. 30 30 30 30 30 30 30 30 30 Nominal capacitance