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    DIODE BAND Search Results

    DIODE BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLC32044EFN
    Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits PDF Buy
    TLC32044IN
    Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits PDF Buy
    TLC32044IFK
    Rochester Electronics LLC TLC32044 - Voice-Band Analog Interface Circuits PDF Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet

    DIODE BAND Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 PDF

    free IR circuit diagram

    Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
    Contextual Info: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package


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    1SS356 OD-323 OD-323 MIL-STD-202 05-Dec-05 100MHz free IR circuit diagram diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent PDF

    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 PDF

    SMD MARKING 541 DIODE

    Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF


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    M3D178 BA792 MAM139 OD110) OD110 SCDS47 113061/1100/01/pp8 SMD MARKING 541 DIODE smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777 PDF

    100MHZ

    Abstract: marking code TS
    Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.


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    1SV277WT 100mA OD-523 OD-523 100MHZ marking code TS PDF

    Contextual Info: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


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    STPSC10TH13TI DocID024699 PDF

    Contextual Info: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


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    STPSC8TH13TI DocID024698 PDF

    100MHZ

    Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.


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    1SV277WT 100mA OD-523 OD-523 100MHZ PDF

    Contextual Info: LL4151 Small-Signal Diode Reverse Voltage 75V Forward Current 150V Features MiniMELF SOD-80C Cathode Band .063 (1.6) Dia. .051 (1.3) .146 (3.7) .130 (3.3) .019 (0.48) .011 (0.28) • Silicon Epitaxial Planar Diode • Fast switching diode in MiniMELF case especially


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    LL4151 OD-80C) DO-35 1N4151 OD-123 1N4151W. D1/10K 20K/box PDF

    Contextual Info: LL4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features Mini-MELF Silicon epitaxial planar diode High speed switching diode 500mW power dissipation 0.063 1.6 0.055(1.4) Mechanical Data Case: Mini-MELF glass case Polarity: Color band denotes cathode


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    LL4148 500mW PDF

    smd diode UM 07

    Abstract: diode IR switch SILICON SWITCHING DIODE BAR65-07 smd rf transistor marking pindiode switch smd diode UM 09 smd diode UM 08
    Contextual Info: Diodes SMD Type Silicon RF Switching Diode BAR65-07 Unit: mm Features Low loss, low capacitance PIN-Diode Band switch for TV-tuners Series diode for mobile communications transmit-receive switch Unconnected pair Absolute M axim um R atings T a = 25 P aram eter


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    BAR65-07 smd diode UM 07 diode IR switch SILICON SWITCHING DIODE BAR65-07 smd rf transistor marking pindiode switch smd diode UM 09 smd diode UM 08 PDF

    melf diode code

    Abstract: glass mini melf diode mini melf diode Schottky melf BAS85
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode


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    BAS85 C-120 BAS85Rev121105E melf diode code glass mini melf diode mini melf diode Schottky melf BAS85 PDF

    smd diode A2

    Abstract: SMD DIODE MARKING 14 smd diode JS A2 diode smd GP 005 DIODE smd diode S4 diode smd A2 S4 DIODE smd diode 1301 DIODE marking S4
    Contextual Info: Diodes SMD Type Band-switching diode BA592 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Small plastic SMD package Low diode capacitance +0.1 2.6-0.1 1.0max Low diode forward resistance Small inductance. 0.375 +0.05 0.1-0.02


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    BA592 OD-323 smd diode A2 SMD DIODE MARKING 14 smd diode JS A2 diode smd GP 005 DIODE smd diode S4 diode smd A2 S4 DIODE smd diode 1301 DIODE marking S4 PDF

    GP 724 DIODE

    Abstract: marking 724 diode smd diode marking code GP smd code marking wl marking code WL marking code diode wl diode SMD WL wl smd diode diode smd marking wl 024 smd diode marking code
    Contextual Info: BA591WS Band-switching diode PINNING Features • Very small plastic SMD package. • Low diode capacitance: max. 1.05 pF. • Low diode forward resistance: max. 0.7Ω. • Small inductance. PIN DESCRIPTION 1 Cathode 2 Anode 2 1 WL Top View Marking Code: "WL"


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    BA591WS OD-323 OD-323 GP 724 DIODE marking 724 diode smd diode marking code GP smd code marking wl marking code WL marking code diode wl diode SMD WL wl smd diode diode smd marking wl 024 smd diode marking code PDF

    Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K K A K TO-220AC STPSC4H065D K A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


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    STPSC4H065 O-220AC STPSC4H065D DocID023598 PDF

    GP 724 DIODE

    Abstract: MARKING WL diode smd marking wl marking code WL smd diode code A Marking Codes smd smd diode marking code smd diode sod-323 marking code 500 wl smd diode 024 smd diode marking code
    Contextual Info: BA591WS BAND SWITCHING DIODE PINNING Features • Very small plastic SMD package • Low diode capacitance • Low diode forward resistance • Small inductance DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WL Top View Marking Code: "WL" Simplified outline SOD-323 and symbol


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    BA591WS OD-323 OD-323 GP 724 DIODE MARKING WL diode smd marking wl marking code WL smd diode code A Marking Codes smd smd diode marking code smd diode sod-323 marking code 500 wl smd diode 024 smd diode marking code PDF

    S1912

    Abstract: 1S1912 smd diode JS BA277 smd diode S4 s4 79 diode smd Diode S4 10 35 DIODE
    Contextual Info: LESHAN RADIO COMPANY, LTD. Band-switching diode BA 277 FEATURES • Small plastic SMD package · Continuous reverse voltage: max. 35 V · Continuous forward current: max. 100 mA · Low diode capacitance: max. 1.2 pF · Low diode forward resistance: max. 0.7 Ω.


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    OD523 SC-79) OD523 SC-79 S1912 1S1912 smd diode JS BA277 smd diode S4 s4 79 diode smd Diode S4 10 35 DIODE PDF

    Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


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    STPSC16H065C O-220AB STPSC16H065CT DocID024810 PDF

    diode t 4148

    Abstract: diode st 4148 st 4148 T 4148 t 4148 diode diode 4148 diode IN 4148 4148 diode 1N4148 DO-34 1N4148
    Contextual Info: 1N4148 SILICON EPITAXIAL PLANAR DIODE Fast Switching Diode This diode is also available in MiniMELF case with the type designation LL4148 Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band


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    1N4148 LL4148 DO-34 DO-35 diode t 4148 diode st 4148 st 4148 T 4148 t 4148 diode diode 4148 diode IN 4148 4148 diode 1N4148 DO-34 1N4148 PDF

    BAR65-03W

    Contextual Info: BAR65-03W Silicon RF Switching Diode 2  Low loss, low capacitance PIN-diode 1  Band switch for TV-tuners  Series diode for mobile communication transmit-receiver switch VPS05176 1 2 EHA07001 Type Marking Pin Configuration Package BAR65-03W M/blue 1=C SOD323


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    BAR65-03W VPS05176 EHA07001 OD323 Aug-21-2001 100MHz BAR65-03W PDF

    laser diode DVD 200mw

    Contextual Info: CS4052003x 405nm Compact Laser Diode Modules Key features Visible light λ= 405nm Output powers =200mW Package type=3.8mmΦ High reliability Applications Blue-ray Disc/HD DVD drive Other new application Laser Diode Solutions CS4052003x is a 405nm band laser diode. It's an attractive light source,


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    CS4052003x 405nm 405nm 200mW CS4052003x divers-vis/lcs/cs4052003x laser diode DVD 200mw PDF

    DIODE LL4148

    Abstract: MELF DIODE color bands LL4148 melf diode color
    Contextual Info: 3Q T LL4148 REVERSE VOLTAGE FORWARD CURRENT Switching Diode 75 Volts 0.15 Amperes MINI MELFÍLL-3 4 Features • Silicon eltaxlal planar diode • High speed switching diode • 500mW bower dissipation Mechanical Data T • Cases:Min-MELF glass case • Polarity:Color band denotes cathode


    OCR Scan
    LL4148 500mW LL-34) 100Hz 100fl 100MHz LL4148 DIODE LL4148 MELF DIODE color bands melf diode color PDF

    Contextual Info: BAP50-03 Small Signal General Purpose PiN Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOD-323 Low Diode Capacitance Low Diode Forward Resistance D 1 Cathode Band H G MARKING 2 F A81 C PACKAGE INFORMATION


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    BAP50-03 OD-323 16-Jul-2013 PDF