DIODE BAND Search Results

Contextual Info: PIN DIODE MODULES PIN diode switches PIN DIODE SWITCHES Features TEMEX offers a complete series of Silicon PIN diode switches covering frequencies from 10MHz to 18 GHz in octave or multi-octave bandwidth. These units are available in packaged or surface mount version.

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

free IR circuit diagram

Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
Contextual Info: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

S4 SMD diode mark

Abstract: top mark smd Philips BA792 diode smd mark s4 SOD110 REFLOW Mam1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

Contextual Info: N AflER PHILIPS/D ISCR ETE b'lE D • APX bbSBSBl D02blbS 2T2 BA423L SILICON AM BAND SWITCHING DIODE FOR SURFACE MOUNTING The BA423L is a switching diode intended for band switching in AM radio receivers. This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope with lead/tin plated metal

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

melf diode color

Abstract: glass mini melf diode MELF DIODE color bands LL4148 r20V LL4148 diode galaxy electrical
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode

Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: Product specification Philips Semiconductors BB901 Variable capacitance diode DESCRIPTION The BB901 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended as a tunable coupling diode in VHF all-band tuners. QUICK REFERENCE DATA

Contextual Info: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

100MHZ

Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.

Contextual Info: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration BAR 65-02W

1N4448

Abstract: diode 1N4448
Contextual Info: BL GALAXY ELECTRICAL 1N4448 REVERSE VOLTAGE : 75 V CURRENT: 0.15 A SMALL SIGNAL SWITCHING DIODE FEATURES DO - 35 GLASS Silicon epitaxial planar diode High speed switching diode 500 mW power dissipation MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode

Contextual Info: Band-switching diode BA 892 FEATURES • Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION

Contextual Info: LL4151 Small-Signal Diode Reverse Voltage 75V Forward Current 150V Features MiniMELF SOD-80C Cathode Band .063 (1.6) Dia. .051 (1.3) .146 (3.7) .130 (3.3) .019 (0.48) .011 (0.28) • Silicon Epitaxial Planar Diode • Fast switching diode in MiniMELF case especially

BAP50-03

Abstract: diode a81
Contextual Info: BAP50-03 Small Signal General Purpose PiN Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOD-323 FEATURES z z D Low Diode Capacitance Low Diode Forward Resistance 1 Cathode Band H G PACKAGING INFORMATION

Contextual Info: LL4148 Voltage Range -75 Volts Current -0.15 Ampere SMALL SIGNAL SWITCHING DIODE Features Mini-MELF Silicon epitaxial planar diode High speed switching diode 500mW power dissipation 0.063 1.6 0.055(1.4) Mechanical Data Case: Mini-MELF glass case Polarity: Color band denotes cathode