DIODE BAND Search Results

Contextual Info: PIN DIODE MODULES PIN diode switches PIN DIODE SWITCHES Features TEMEX offers a complete series of Silicon PIN diode switches covering frequencies from 10MHz to 18 GHz in octave or multi-octave bandwidth. These units are available in packaged or surface mount version.

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

free IR circuit diagram

Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
Contextual Info: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

DIODE A6 sod110

Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Contextual Info: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation

S4 SMD diode mark

Abstract: top mark smd Philips BA792 diode smd mark s4 SOD110 REFLOW Mam1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

BA792

Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

1N4148 SOD80C

Abstract: 1N4148 SOD-80C LL4148 VISHAY ll4148 sod123 general semiconductor DIODE SOD80 LL4148 SOT23 LL4148 SOT MINI-MELF DIODE BLACK CATHODE
Contextual Info: LL4148 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode MiniMELF SOD-80C Reverse Voltage 100V Forward Current 150mA Features Cathode Band • Silicon Epitaxial Planar Diode • Fast switching diode in MiniMELF case especially suited

Contextual Info: N AflER PHILIPS/D ISCR ETE b'lE D • APX bbSBSBl D02blbS 2T2 BA423L SILICON AM BAND SWITCHING DIODE FOR SURFACE MOUNTING The BA423L is a switching diode intended for band switching in AM radio receivers. This SM diode is a leadless diode in a hermetically sealed SOD-80 envelope with lead/tin plated metal

melf diode color

Abstract: glass mini melf diode MELF DIODE color bands LL4148 r20V LL4148 diode galaxy electrical
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode

LL4148 diode galaxy electrical

Abstract: MELF DIODE color bands LL4148 LL4148 melf
Contextual Info: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE FEATURES LL4148 1111REVERSE VOLTAGE: 75 V CURRENT: 0.15 A Mini - MELF Silicon epitaxial diode High speed switching diode 500mW power dissipation MECHANICAL DATA Case:Mini-MELF glass case Polarity:Color band denotes cathode

Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

100MHZ

Abstract: marking code TS
Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.

Contextual Info: Product specification Philips Semiconductors BB901 Variable capacitance diode DESCRIPTION The BB901 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended as a tunable coupling diode in VHF all-band tuners. QUICK REFERENCE DATA

Contextual Info: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

100MHZ

Contextual Info: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.

DIODE 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters

1N4148WS

Contextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C