DIODE BA 398 Search Results

Contextual Info: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft

IRF7506

Abstract: marking code EA SMD MOSFET
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

IRF7506

Contextual Info: PD - 9.1268D IRF7506 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2

IRF7311

Abstract: IRF7101 DIODE smd marking 82a
Contextual Info: Previous Datasheet Index Next Data Sheet PRELIMINARY PD 9.1435 IRF7311 HEXFET Power MOSFET Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

diode schottky 117c

Abstract: IRF7101 IRF7421D1
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1411 IRF7421D1 PRELIMINARY l l l l FETKY T M HEXFET  Co-packaged Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint A S S G MOSFET & Schottky Diode

st zd 125

Abstract: aj7 mosfet NC2030
Contextual Info: PD-91866 International IQR Rectifier • • • • • • IRF7663 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel V dss = -2 0 V R üS (on) = 0.020Q

Contextual Info: PD -91865 IRF7555 PRELIMINARY HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Datasheet for IRLML2502

Abstract: application IRLML2502 irlml2502 for IRLML2502 ET 439 IRLML2502 G EIA-541 Y1 SOT-23
Contextual Info: PD - 93757B IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description These N-Channel MOSFETs from International Rectifier

IRLML6401 SOT-23

Abstract: EIA-541 IRLML6401 marking SH SOT23 mosfet
Contextual Info: PD- 93756B IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier

10mhz mosfet

Abstract: IRF7534D1 3A 300V Schottky Diode
Contextual Info: PD -93864 IRF7534D1 FETKY MOSFET & Schottky Diode HEXFET Co-packaged power MOSFET and Schottky diode ● Ultra Low On-Resistance MOSFET ● Trench technology TM Footprint ● Micro8 ● Available in Tape & Reel Description ● 1 8 K A 2 7 K S 3 6 D G 4 5

Contextual Info: PD-91844A International ie R Rectifier IRF7210 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount Available in Tape & Reel V Ds s = -12V RüS on = 0.007Q. Description These P-Channel MOSFETs from International Rectifier

OA 207 B diode

Abstract: EIA-541 IRF7501 IRF7530
Contextual Info: PD-93760 International IOR Rectifier IRF7530 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low O n-R esistance Dual N-Channel M O SFET Very Small SO IC Package Low Profile <1.1 mm A vailable in Tape & Reel Vdss = 20V RüS(on) = 0.030Î2

IRF7504

Abstract: rce marking
Contextual Info: PD - 9.1267G IRF7504 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 4 5 S1 G2 VDSS = -20V

Contextual Info: PD- 93757A IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.045Ω S Description These N-Channel MOSFETs from International Rectifier

Contextual Info: PD- 93757 IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.045Ω S Description These N-Channel MOSFETs from International Rectifier

IRF7501

Contextual Info: PD - 91265H IRF7501 PRELIMINARY HEXFET Power MOSFET l l l l l l l Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2

smd diode S6 66a

Abstract: REGULATOR SMD MARKING CODE ASC
Contextual Info: PD - 9.1269E International I R Rectifier IRF7507 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Very Small SOIC Package • Low Profile <1.1 mm • Available in Tape & Reel • Fast Switching

diode BA 398

Abstract: pin diagram of ic 4141 DEA002
Contextual Info: 02 oH V SC AV ER OM AI SIO PL LA N IA BL S NT E • DEA 24Q *R Features ■ ■ 6 003 ■ Lead free versions available RoHS compliant lead free version * Supports 15 KV IEC 61000-4-2 ESD equipment specification* Single device protects as many as 20 lines

BIDIRECTIONAL DIODE

Abstract: 2DEA-2-Q24R 2DEA-2-Q24T 2DEB-2-W20R 2DEB-2-W20T 2QSP24 DEA002 MO-137 MS-013 PN diode specifications
Contextual Info: IA NT Features 02 S oH *R DEA 24Q CO M PL • ■ ■ 6 003 ■ Lead free RoHS compliant* Supports 15 KV IEC 61000-4-2 ESD equipment specification* Single device protects as many as 20 lines on exposed pins, communications ports ■ ■ Incorporates 40 bi-directional PN

W20R

Contextual Info: Features • DEA 24Q 02 ■ 6 003 ■ ■ Applications Supports 15 KV IEC 61000-4-2 ESD equipment specification* Single device protects as many as 20 lines on exposed pins, communications ports Incorporates 40 bi-directional PN junction diodes Small form factor replaces 20 SOT23

IRF7314

Abstract: IRF7101
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1436 IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description

IRLML6401

Abstract: marking bad sot-23 marking 43A sot23
Contextual Info: PD- 93756 IRLML6401 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -12V G RDS(on) = 0.05Ω S Description These P-Channel MOSFETs from International Rectifier utilize advanced