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    DIODE BA 204 Search Results

    DIODE BA 204 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ16V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Datasheet

    DIODE BA 204 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode ba 204

    Abstract: TFK ba204 ba capacitance diode BA204 BA-204
    Contextual Info: BA 204 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Allgemein Applications: General purpose Abmessungen in mm Dimensions in mm » '» • 0 1 ,9 KATHODE 0 0 ,5 8 CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight


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    PDF

    BA 204-115

    Abstract: BA 204115 B80C bf 204 115 110BHZ B20C 500 B80C 300 b80c 400 B250C1500B B80C-3200/2200
    Contextual Info: o single phase moulded bridges ponts monophasés moulés THOMSON-CSF VRRM Type* Vrms recom­ mended V 1#5 A B 40C B80C B 125C B2 5 0 C B 380C / BY BA BB BD BF BH / B20C B40C B80C B 125C B 250C B 380C (A) 1,6 tam b = 70 °C * * 25 50 80 150 250 380 Ir per diode


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    B125C B250C 10/is) BA 204-115 BA 204115 B80C bf 204 115 110BHZ B20C 500 B80C 300 b80c 400 B250C1500B B80C-3200/2200 PDF

    1300313

    Abstract: JE 13003
    Contextual Info: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)


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    1SV100 a55MAX. 1300313 JE 13003 PDF

    BA102 diode

    Abstract: BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A
    Contextual Info: C B 14 Variable capacitance diodes continued Diodes à capacité variable ( suite ) Type Case B oîtie r T O 92 (CB 97) C B 12 Tam b25oC VR (V) 'F (m A) 'r (nA) max max max 100 5000 100 C VR (V) (pF) / Vr C ÎV ^ /C ^ Ï./ v , (V) m in / (V ) / / v2 (V ï


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    Tamb25Â BA102 BA102 diode BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A PDF

    Contextual Info: Uninterruptible Power Supply Unit for Universal Use QUINT-DC-UPS/24DC/10 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of


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    QUINT-DC-UPS/24DC/10 PDF

    SE3BE

    Contextual Info: ts o g o a t c s m M sK /ViVi P V O Li ; PHA5L 4350 B R ID G L SM ART POWER i\i i\! t 11 v I : u I i 11 H YB R ID 8170 Thompson Road Qctn, N.Y. 13039 315 689-9201 FEATURES: MIL-STD-7772 CERTIFIED • 500V, 28 Amp Capability • Ultra Low Thermal Resistance - Junction to Casa - O.0°C/W


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    20KHz MIL-STD-7772 MSK4350 MSK4350B SE3BE PDF

    Contextual Info: STM32L15xx6/8/B-A Ultra-low-power 32-bit MCU ARM -based Cortex®-M3, 128KB Flash, 32KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range


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    STM32L15xx6/8/B-A 32-bit 128KB C/105Â DocID024330 PDF

    Contextual Info: STM32L15xx6/8/B-A Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 128KB Flash, 32KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range


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    STM32L15xx6/8/B-A 32-bit 128KB C/105Â DocID024330 PDF

    MSK4320

    Contextual Info: / sI af3L , ' l ’x ' J a * 42 A M P , 2 0 0 V O LT 2 P H A S E BRI DGE '/I S 4320 SM A R T POWER HYBRID I TJT'J [ M Y C U I I I ' 9170 Thompson Road Cicero, N.Y. 13039 315 699*9201 FEATURES: • • • • • • • ; a /j /i * MIL-STD-1772 CERTIFIED


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    MIL-STD-1772 SK4320 SK4320B Military-Mil-H-38534 MSK4320 PDF

    Contextual Info: 2SK1547-01 MR FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET _ - „ _ F-II SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage


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    2SK1547-01 PDF

    Contextual Info: ES51980 6000counts DMM Analog front end/Insulation/Inrush Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s


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    ES51980 6000counts) 630mV 000nF ES636) PDF

    Contextual Info: TC74LCX646FS LOW VOLTAGE OCTAL BUS TRANSCEIVER I REGISTER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX646 is a high p arform ance C M O S O CTAL BUS T R A N SC E IV ER /R EG IS T E R . Designed fo r use in 3.3 V o lt systems, it achieves high speed o p eratio n w h ile


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    TC74LCX646FS TC74LCX646 10MHz PDF

    TSI320

    Abstract: Alcatel 1511 BA delta wireless doorbell alcatel 1511 max tsi320l
    Contextual Info: g _ _ Tsi320 Dual-Mode PCI-to-PCI Bus Bridge User Manual 80A600B_MA001_04 Preliminary June 2001 This document discusses the features, capabilities, and configuration requirements of the Tsi320. It is intended for hardware and software engineers who are designing system interconnect


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    Tsi320TM Tsi320. Tsi320, Tsi320 Alcatel 1511 BA delta wireless doorbell alcatel 1511 max tsi320l PDF

    C 5388

    Abstract: lt 860 F8006N channel mosfet sop_8 Zener diode itt 150 V
    Contextual Info: Fuji New Semiconductor Products 9 = F V l N channel, Dual 20V/5A Jk I ^ Features 1&t Low-on resistance VGS=2.5V driving Aval anche capability rating Higher pulse-current Including G-S zener diode VGS=2.5V i m 7 / \ ' 7 >' > i / WUX G - s r a T V i t - ^ ^ i - K rtU


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    1000mmsPCB C 5388 lt 860 F8006N channel mosfet sop_8 Zener diode itt 150 V PDF

    ID 48 Megamos

    Abstract: 35N25 IXTM35N25 ixtm35n30
    Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous


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    IXTH35N25 IXTM35N25 IXTH35N30 IXTM35N30 O-204 O-247 IXTH350 ID 48 Megamos 35N25 PDF

    LT11293

    Contextual Info: / T u r m TECHNOLOGY LTC694-3.3/LTC695-3.3 3.3V Microprocessor Supervisory Circuits F€flTUR€S D C S C R IP T IO n • Guaranteed Reset Assertion at Vcc = 1V ■ Pin Compatible with LTC694/LTC695 for 3.3V Systems ■ 200|oA Typical Supply Current ■ Fast 30ns Typ On-Board Gating of RAM Chip


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    LTC694-3 3/LTC695-3 LTC694/LTC695 SO-16 200ms 16-Lead LT11293 PDF

    FBG676

    Abstract: FFG1156
    Contextual Info: 7 Series FPGAs Packaging and Pinout Product Specification UG475 v1.9 February 14, 2013 The information disclosed to you hereunder (the "Materials") is provided solely for the selection and use of Xilinx products. To the maximum extent permitted by applicable law: (1) Materials are made available "AS IS" and with all faults, Xilinx hereby DISCLAIMS ALL


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    UG475 FBG676 FFG1156 PDF

    LTC6901

    Contextual Info: / T u r m TECHNOLOGY LTC690/LTC691 _ LTC694/LTC695 M icrop rocessor Supervisory C ircuits F€RTUR€S DCSCRIPTIOn • ■ ■ ■ The LTC690 family provides complete powersupply moni­ toring and battery control functions for microprocessor reset, battery backup, CMOS RAM write protection, power


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    LTC690/LTC691 LTC694/LTC695 LTC690 16-Lead LTC6901 PDF

    ICX413AQ

    Abstract: CM500S CXD1268M
    Contextual Info: ICX413AQ Diagonal 28.40mm Type 1.8 Frame Readout CCD Image Sensor with Square Pixel for Color Cameras Description The ICX413AQ is a diagonal 28.40mm (Type 1.8) interline CCD solid-state image sensor with a square pixel array and 6.15M effective pixels. Frame readout


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    ICX413AQ ICX413AQ CM500S CXD1268M PDF

    PC28F128P30BF65

    Abstract: PC28F128P30BF PC28F640P30TF PC28F640P30TF65 js28f128p30tf75 JS28F640P30BF js28f640 js28f128p30tf PC28F640 JS28F128P30
    Contextual Info: Numonyx Axcell P30-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ High Performance: — 65ns initial access time for Easy BGA and QUAD+ — 75ns initial access time for TSOP — 25ns 8-word asynchronous-page read mode


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    P30-65nm 128-Mbit, 64-Mbit 52MHz 256-word 40Mhz PC28F128P30BF65 PC28F128P30BF PC28F640P30TF PC28F640P30TF65 js28f128p30tf75 JS28F640P30BF js28f640 js28f128p30tf PC28F640 JS28F128P30 PDF

    Contextual Info: Thp% H EW LETT 1"HM P A C K A R D Two Channel Optical Incremental Encoder Modules Technical Data HEDS-9000 HEDS-9100 Features Description • • • • • The HEDS-9000 and the HEDS9100 series are high performance, low cost, optical incremental encoder modules. When used with


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    HEDS-9000 HEDS-9100 HEDS-9000 HEDS9100 HEDS-9100 HEDS-5120 HEDS-91 HEDS-9000/9100/9200 PDF

    Disc ceramic capacitor GE 130L20

    Abstract: P1502 CAPACITOR P150l10 capacitor GE CERAMIC DISC CAPACITOR 130L10 GE 100z15 VARISTOR equivalent to P275L40 ge VARISTOR 130L20 P510L80 varistor P275L20 P2754 1010
    Contextual Info: PRODUCT CATALOG & DESIGN GUIDE Circuit Protection Products Littelfuse Circuit Prot Solutions Port Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop


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    EC115 Disc ceramic capacitor GE 130L20 P1502 CAPACITOR P150l10 capacitor GE CERAMIC DISC CAPACITOR 130L10 GE 100z15 VARISTOR equivalent to P275L40 ge VARISTOR 130L20 P510L80 varistor P275L20 P2754 1010 PDF

    S4 78a DIODE schottky

    Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
    Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


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    25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 PDF

    30021

    Abstract: L48C L41C IC L44C DATASHEET L30C l31c L43C ORSO42G5 ORSO82G5 ORT42G5
    Contextual Info: ORCA ORSO42G5 and ORSO82G5 0.6 - 2.7 Gbps SONET Backplane Interface FPSCs August 2005 Data Sheet Introduction Lattice has extended its family of high-speed serial backplane devices with the ORSO42G5 and ORSO82G5 devices. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORSO42G5 and


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    ORSO42G5 ORSO82G5 ORSO82G5 ORSO42G5-1BMN484I ORSO82G5-2FN680I 30021 L48C L41C IC L44C DATASHEET L30C l31c L43C ORT42G5 PDF