DIODE BA 204 Search Results

diode ba 204

Abstract: TFK ba204 ba capacitance diode BA204 BA-204
Contextual Info: BA 204 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Allgemein Applications: General purpose Abmessungen in mm Dimensions in mm » '» • 0 1 ,9 KATHODE 0 0 ,5 8 CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight

BA204

Abstract: BA-204
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • ÖTEDO^b OOD'ÌTIB 5 H A L GG BA 204 IM electronic Creative Technologies Silicon Fpitaxial Planar Diode Applications: General purpose Dimensions in mm Cathoda =>26 1 1 <3.9 g<ass -—' - n u— Standard glass case

BA 204-115

Abstract: BA 204115 B80C bf 204 115 110BHZ B20C 500 B80C 300 b80c 400 B250C1500B B80C-3200/2200
Contextual Info: o single phase moulded bridges ponts monophasés moulés THOMSON-CSF VRRM Type* Vrms recom­ mended V 1#5 A B 40C B80C B 125C B2 5 0 C B 380C / BY BA BB BD BF BH / B20C B40C B80C B 125C B 250C B 380C (A) 1,6 tam b = 70 °C * * 25 50 80 150 250 380 Ir per diode

Contextual Info: ESAC87-009 16A s±']'tA^-K SCHOTTKY BA R R IE R DIODE • ¡ tr H t: Features • te V F Low VF Super high speed sw itchin g. m m m m m • T V -* -ftifjC J rS S fifS te C on nection D iagram H igh reliability by planer design. : A p p lica tio n s r + H

1300313

Abstract: JE 13003
Contextual Info: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)

P25N06

Abstract: 25n06 rfm25n t3901
Contextual Info: SbE D î J j • 43QS271 0041742 713 H A R R IHAS R I S HARRIS SEMICOND SECTOR F R M F P 2 5 N 6 2 5 N 6 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 — " T -S fl-O J Package Features TO-204AA • 25A, 50V and 60V • rDS on = 0.0 7ÎÏ

DS0026CN

Abstract: sn7404 HC801 TCD102C-1 2SA1015 T-41-55 logic gate diagram of ic tri linear CCD
Contextual Info: TOSHIBA ~b? -CLOGIC/MEMORY} 9 09 72 48 T OS HI BA ^ 0 ^ 7 5 4 0 DOCHSai 5 |~~ ÍL O G I C / M E M O R Y CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device) 67 C 0 9 5 2 1 TCD102C-1 D T-41-55 The TDS102C-1 is a high resolution and high sensitivity 2048 element

BA102 diode

Abstract: BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A
Contextual Info: C B 14 Variable capacitance diodes continued Diodes à capacité variable ( suite ) Type Case B oîtie r T O 92 (CB 97) C B 12 Tam b25oC VR (V) 'F (m A) 'r (nA) max max max 100 5000 100 C VR (V) (pF) / Vr C ÎV ^ /C ^ Ï./ v , (V) m in / (V ) / / v2 (V ï

schottky diode marking A7

Abstract: diode ba 241 marking A7 diode schottky ba 662 diode ba 204 BAV70 ON MARKING 358 sot-23 Diode bav99 case MARKING A1 diode bav70
Contextual Info: BA- Series Features: • • • • Fast switching speed. Surface mount package ideally suited for automatic insertion. For general purpose switching applications. High conductance. SOT-23 Dimensions : Inches Millimetres BAW56 Marking: A1 BAV99 Marking: A7

28 66 23 9

Contextual Info: Uninterruptible Power Supply Unitfor Universal Use QUINT-DC-UPS/24DC/20 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of

phoenix quint ups

Abstract: Uninterruptible power supply
Contextual Info: Uninterruptible Power Supply Unit for Universal Use QUINT-DC-UPS/24DC/40 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

Contextual Info: Uninterruptible Power Supply Unit for Universal Use QUINT-DC-UPS/24DC/10 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

IEC 947 EN 60947

Abstract: MCC panel design buzzer panel DC-13 Q300 RJ12 1302401 VDE 0660 - 107 Sonic Drive
Contextual Info: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling

IEC 947 EN 60947

Abstract: EN 60947-1/2 LED Lamp 1W RJ12 socket thermoflex 901-030 EN 60947-5-5 IEC 60947-5-5 DC-13 RJ12
Contextual Info: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

MCC panel design

Abstract: IEC960947-5-1 RJ12
Contextual Info: RAFIX 22 QR 2 General data RAFIX 22QR control component range • For a mounting hole diameter of 22.3 mm to IEC 60947 • 250V/10A max. • Water-jet proof IP65 • 2 collar shapes • The lamps of the pushbuttons can also be replaced from the front • The contact blocks silver or gold contacts snap onto the actuators with a coupling

Contextual Info: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner

Contextual Info: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner

3SB3400-1G

Abstract: 3sb34001g 3sb* lamp siemens 3RT1026 3SB3400
Contextual Info: Product data sheet 3SB3400-1G ACTUATOR-/INDICATOR COMPONENT W. SEPARATE LAMP TEST FUNCTION LAMP HOLDER BA 9S WITHOUT LAMP, FOR LAMP MAX.2.6W SCREW TERMINAL RATED VOLTAGE ACC.TO LAMP SUITABLE F LED 24/48/230V AC/DC General technical details: Product designation

SIEMENS 3RT1026

Abstract: 3RT1026 SIEMENS 3RT1015 3SX1731
Contextual Info: Product data sheet 3SB3420-1C COMPONENT FOR ENCLOSURE, 22MM LAMP HOLDER BA 9S WITH INTEGRATED VOLTAGE REDUCER WITH LAMP 130V, 3SX1731 RATED VOLTAGE 230/240V AC SCREW TERMINAL CLEAR General technical details: Product designation lampholder Degree of pollution

3SB3400-1G

Abstract: 3RT1026 siemens Pushbutton Switch transformer 50 Hz
Contextual Info: Product data sheet 3SB3400-1G ACTUATOR-/INDICATOR COMPONENT W. SEPARATE LAMP TEST FUNCTION LAMP HOLDER BA 9S WITHOUT LAMP, FOR LAMP MAX.2.6W SCREW TERMINAL RATED VOLTAGE ACC.TO LAMP SUITABLE F LED 24/48/230V AC/DC General technical details: product designation

1N3207

Abstract: HP 4066 UAA 1021
Contextual Info: MIL-S-19500/230C no JLC. r c u i u cu j nrwCje SU PERSED IN G MIL-S-19500/230B M IL IT A R Y SP EC IFIC A T IO N SEM ICONDUCTOR D EV IC E, DIODE, SILIC O N , HIGH-CONDUCTANCE T Y P E JAN-1N3207 m u-i« I#, x m a a p e u m u m i u n ia> n i c u t u a t u i y i u x