DIODE BA 204 Search Results

diode ba 204

Abstract: TFK ba204 ba capacitance diode BA204 BA-204
Contextual Info: BA 204 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Allgemein Applications: General purpose Abmessungen in mm Dimensions in mm » '» • 0 1 ,9 KATHODE 0 0 ,5 8 CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight

BA 204-115

Abstract: BA 204115 B80C bf 204 115 110BHZ B20C 500 B80C 300 b80c 400 B250C1500B B80C-3200/2200
Contextual Info: o single phase moulded bridges ponts monophasés moulés THOMSON-CSF VRRM Type* Vrms recom­ mended V 1#5 A B 40C B80C B 125C B2 5 0 C B 380C / BY BA BB BD BF BH / B20C B40C B80C B 125C B 250C B 380C (A) 1,6 tam b = 70 °C * * 25 50 80 150 250 380 Ir per diode

Contextual Info: ESAC87-009 16A s±']'tA^-K SCHOTTKY BA R R IE R DIODE • ¡ tr H t: Features • te V F Low VF Super high speed sw itchin g. m m m m m • T V -* -ftifjC J rS S fifS te C on nection D iagram H igh reliability by planer design. : A p p lica tio n s r + H

1300313

Abstract: JE 13003
Contextual Info: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)

P25N06

Abstract: 25n06 rfm25n t3901
Contextual Info: SbE D î J j • 43QS271 0041742 713 H A R R IHAS R I S HARRIS SEMICOND SECTOR F R M F P 2 5 N 6 2 5 N 6 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 — " T -S fl-O J Package Features TO-204AA • 25A, 50V and 60V • rDS on = 0.0 7ÎÏ

BA102 diode

Abstract: BA102 diode ba102 diode ba 204 BB109G BB205 BB113 BB 104 BB106 BB205A
Contextual Info: C B 14 Variable capacitance diodes continued Diodes à capacité variable ( suite ) Type Case B oîtie r T O 92 (CB 97) C B 12 Tam b25oC VR (V) 'F (m A) 'r (nA) max max max 100 5000 100 C VR (V) (pF) / Vr C ÎV ^ /C ^ Ï./ v , (V) m in / (V ) / / v2 (V ï

28 66 23 9

Contextual Info: Uninterruptible Power Supply Unitfor Universal Use QUINT-DC-UPS/24DC/20 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of

Contextual Info: Uninterruptible Power Supply Unit for Universal Use QUINT-DC-UPS/24DC/10 1. Short Description Uninterruptible Power Supply Units for Buffering Long-Term Power Interruptions • Saves space thanks to the compact, uniform design • Integrated diode saves money through isolation of

facon bf 39933

Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
Contextual Info: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom ­ mended max id on re­ sistive load

SE3BE

Contextual Info: ts o g o a t c s m M sK /ViVi P V O Li ; PHA5L 4350 B R ID G L SM ART POWER i\i i\! t 11 v I : u I i 11 H YB R ID 8170 Thompson Road Qctn, N.Y. 13039 315 689-9201 FEATURES: MIL-STD-7772 CERTIFIED • 500V, 28 Amp Capability • Ultra Low Thermal Resistance - Junction to Casa - O.0°C/W

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

RM0038

Contextual Info: STM32L100x6/8/B-A Ultra-low-power 32-bit MCU ARM -based Cortex®-M3, 128KB Flash, 16KB SRAM, 2KB EEPROM, LCD, USB, ADC, DAC Datasheet - production data Features • Ultra-low-power platform – 1.8 V to 3.6 V power supply – -40°C to 85°C temperature range

IC 1691 AI CIRCUIT DIAGRAM

Abstract: 1691 AI 50/MSC 1691 A1
Contextual Info: 19-0208; Rev 2; 9/95 y k i y j x i v k i In te g ra te d pP Supervisor Module w ith Lithium B ackup B a tte ry _ G eneral D escription The internal +3V, 125mAh lithium battery connects to the |j P supervisory circuit through external pin strap­

Contextual Info: □ Q B' ï ba b 3 • ' ' P 3^-11 S G S -T H O M S O N G F . H L iÊ T T M D Ê i B U Z 4 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G S-THOMSON TYPE V Dss BUZ42 500 V 3DE RDS on 2 Q » Id 4 A • HIGH VOLTAGE - FOR OFF-LINE SM PS • ULTRA FAST SW ITCHING FOR OPERATION

Contextual Info: STM32L15xx6/8/B-A Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 128KB Flash, 32KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

h11q

Abstract: tfk K TFK 19 018 2DI150D-050 TFK 600 TFK 450 TFK 03 Diode TFK - 018 TFK diode tfk t 39
Contextual Info: 2 I 1 5 O D - O 5 O O 50A D /< 7 - — )V P O W E R T R A N SIS T O R M O D U LE • I f f i : Features • 7 1; - * < y • hFE/^fij^ • tell&B 5j"— KrtSK Including Free Wheeling Diode High DC Current Gain Insulated Type IfflìÈ : A pplications High Power Switching

MSK4320

Contextual Info: / sI af3L , ' l ’x ' J a * 42 A M P , 2 0 0 V O LT 2 P H A S E BRI DGE '/I S 4320 SM A R T POWER HYBRID I TJT'J [ M Y C U I I I ' 9170 Thompson Road Cicero, N.Y. 13039 315 699*9201 FEATURES: • • • • • • • ; a /j /i * MIL-STD-1772 CERTIFIED

ETG81-O5OA

Abstract: TI 121 Transistor diode b22 ETG81-050A B-23 M102 T151 transistor ac 151
Contextual Info: ETG81-O5OA 30a : Outline Drawings — )V POWER TRANSISTOR MODULE F e a tu re s • 7 l) — x) K rtffll Including Free W heeling Diode • hFE*'rfl5^N High DC Current Gain Insulated Type IffliÊ ’ A p p lic a tio n s > 9 Power S w itching • AC i — 9 V M

b310 diode

Abstract: diode ssil
Contextual Info: 1DI75F-120 75a M ïfé '+ iÈ : Outline Drawings POWER TRANSISTOR MODULE : Features • S Ü ÎE E • High. Voltage 7'J—s f c ' f L / / ' ? ' K f * 3 f f l E • A S O * ''J a L ' •mmr* Including Free W heeling Diode Excellent Safe Operating Area i nsulated Type

Contextual Info: 2SK1547-01 MR FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET _ - „ _ F-II SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage

Contextual Info: ES51980 6000counts DMM Analog front end/Insulation/Inrush Features • 6000 counts dual-slope SADC (2-5 cnvs/s.) • Input signal full scale: 630mV (Max. 6300 count) • Built-in 600 counts fast speed (x10) FADC • Fast ADC conversion rate: 20-50 times/s

Contextual Info: TC74LCX646FS LOW VOLTAGE OCTAL BUS TRANSCEIVER I REGISTER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX646 is a high p arform ance C M O S O CTAL BUS T R A N SC E IV ER /R EG IS T E R . Designed fo r use in 3.3 V o lt systems, it achieves high speed o p eratio n w h ile