DIODE BA 124 Search Results

BA124 Diode

Abstract: BA124
Contextual Info: BA 124 Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Turiern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm 02,6 Cl 5 117 0 0,55 I Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7

diode 1079

Abstract: medical application of laser semiconductor laser 1064 nm laser diode
Contextual Info: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-1064-08000-4020-CMT04-0000 General Product Information Product Application

Laser Diode 808 nm

Abstract: eyp-bal-0808 semiconductor laser
Contextual Info: Version 0.90 26.05.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0808-08000-4020-CMT04-0000 General Product Information Product Application

medical application of laser

Abstract: M4000 980 nm laser diode
Contextual Info: Version 0.90 08.04.2008 page: 1 from 4 DFB/DBR TPL/TPA BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure RWE/RWL PRELIMINARY SPECIFICATION BAL BA Laser EYP-BAL-0980-08000-4020-CMT04-0000 General Product Information Product Application

laser diode 635 nm

Contextual Info: Version: 1.02 23.02.2007 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0653-00500-0710-CMT02-0000 Absolute Maximum Ratings Symbol Unit min typ max Operational Temperature at case TC °C 40 Forward Current

1064 nm laser diode

Abstract: NTC 10 KOHM
Contextual Info: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-1064-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case

NTC Thermistor 8 kOhm

Abstract: CW laser diode 808 nm eypbal0808070004020cdl010000 eyp-bal-0808-07000-4020-cdl01-0000 connector 2-pin
Contextual Info: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0808-07000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case

thermistor 102 ntc

Abstract: RESISTOR SIL 102 5 PIN
Contextual Info: Version: 1.02 14.11.2006 page: 1 from 4 BROAD AREA LASER GaAs Semiconductor Laser Diode Single Emitter Structure BA Laser EYP-BAL-0980-10000-4020-CDL01-0000 Absolute Maximum Ratings Symbol Unit min typ max Storage Temperature TS °C 70 Operational Temperature at case

Contextual Info: SKKD 701 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 5 IJKL IJJL I P@QQ PUQQ P[QQ I PBQQ P?QQ PVQQ B@QQ BBQQ Symbol Conditions MGCI MGKL 2^' Rectifier Diode Modules SKKD 701 # 2' 23% 4%(&124 2)*.0&'%3 1%'&0 5&*%60&'% 7(%42*2-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8

Contextual Info: SKKT 460, SKKH 460 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 5 Thyristor / Diode Modules SKKT 460 SKKH 460 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2)*.0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9: (%4-/)2;%3< +20% )-= >?@A@B

Contextual Info: SKKD 380 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Rectifier Diode Modules SKKD 380 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42*2-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9: (%4-/)2;%3< +20% )-= > ?@ A@B

Contextual Info: SKET 330 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 4 Thyristor Modules SKET 330 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9,8(2*'-( :2', &1602+82)/ /&'% ;< (%4-/)2=%3> +20% )-? @ AB CBD

Contextual Info: SKKE 600 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 4 DCEF DCCF D RBLL R?LL BLLL D RBLL R?LL BLLL GHMD J ?LL M N*2 = RSLT U4 J RLL VWQ EXX> ?LLYRB EXX> ?LLYR? EXX> ?LLYBL$Z BBLL BBLL EXX> ?LLYBB$Z Symbol Conditions GHMD *2)= RSLT U4 J RLL VW GHEF UP[ J BA VWT RL 1*

Contextual Info: 7^237 5bE D DDMOSRE TOb M S G T H T ~ 5 2 - - $ Ö - q M54/74HC651 M54/74HC652 S C S - T H O M S O N m HC651 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE, INV. HC652 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE) LOW PO W ER DISSIPATIO N lCC = 4 jiA (MAX.) at T a = 2 5 °C

Contextual Info: SbE 7^2^37 D 004G27Ö b3b ISGTH S C S -T H O M S O N llô g^(ô ilL[l(gTr[^(g)R!]D i T -Z 2 -3 Q -o r M54/74HC646 M54/74HC648 HC646 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE) HC648 OCTAL BUS TRANSCEIVER/REGISTER (INVERTING-3 STATE) S G S-THOMSON • LOW POWER DISSIPATION

3B2 diode

Abstract: 4C3 diode 6c2 diode potentiometer 4k7 P42AN 4A2 diode Transistor 8c4 SSM-107-LM-DV-P-TR 4D2 diode Transistor 5C5
Contextual Info: REV REF DATE DRAWN BY 1 - 14.01.2009 SHN A A RSK2H8S2456 STARTER KIT SCHEMATICS B C PAGE DESCRIPTION 1 2 3 4 5 Index Microcontroller-1 Microcontroller-2 Memory Address and Data Bus Buffer 6 7 8 9 10 Switches, Power Supply and Reset E10A Debug Connector and Serial Port

4A2 diode

Abstract: 9b2 diode 9a3 diode Diode 7c2 p45an 9b3 diode p43an SSM-107-LM-DV-P-TR SST25VF016B-50-4C-S2AF 6c2 diode
Contextual Info: REV REF DATE DRAWN BY 1 2 3 4 -TRAC#1265 ECR#198 TRAC#1359 14.01.2009 26.03.2009 07.07.2009 25.08.2009 SHN SHN SHN SHN A A RSK2H8S2456R STARTER KIT SCHEMATICS PAGE B Note : 1 2 3 Index Microcontroller-1 Microcontroller-2 6 Switches, Power Supply and Reset

Contextual Info: Ä 7 SCS-THOM SON M54/74HC651 ^ T /n . RülD ^©[l[L[l©TOIiaa©i_M54/74HC652 HC651 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE, INV. HC652 OCTAL BUS TRANSCEIVER/REGISTER (3-STATE) • LOW POWER DISSIPATION lCC = 4 /tA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY

Contextual Info: SGS-THOMSON M54/74HC646 BMilOMliiLiigTrMDgi_M54/74HC648 HC646 OCTAL BUS TRANSCEIVER/REGISTER 3-STATE HC648 OCTAL BUS TRANSCEIVER/REGISTER (INVERTING-3 STATE) • LOW POWER DISSIPATION |cc = 4 ijlA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V nih = V nil = 28% Vcc (Min.)

MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for

MDA920A1

Abstract: MDA920A MDA920 MDA920-1 MDA920A-1 motorola bridge rectifier mda 3BC100 MDA9201 BF400
Contextual Info: SILICON MINIATURE DIODE ASSEMBLIES MDA920 series “Y ^ CASE 108 MDA920A MDA920 Miniature Integral Diode Assem blies MEDA are low-current rectifier circuit configurations designed with a high output-current/size ratio for. applications where space is at a premium. MIDA packages are available with flat ribbon

TC74HC191P

Contextual Info: T O S HI BA LOfilC/MEMQRY 14E p | .,017248 OQlSlSa 3 | TC74HC190P/F - TC74HC191P/F 'T - y S - Z .3 -D°\ TC74HC190P/F BCD UP/DOWN COUNTER TC74HC191P/F 4-BIT BINARY UP/DOWN COUNTER_ The TC74HC190 and TC74HC191 are high speed CMOS 4-BIT UP/DOWN COUNTERS fabricated

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800