DIODE B74 Search Results

sod323 diode marking code 2E

Abstract: V2E MARKING DIODE sod323 diode marking code AC DIODE B74 DIODE marking code B74 BB134 diode code B74 UHF diode BB135 UHF variable capacitance diode
Contextual Info: Philips Semiconductors_ b b 5 3 ^ 3 1 Q0Sb3^b 73fl W A P X Preliminary specification BB134 UHF variable capacitance diode N AUER PHILIPS/DISCRETE bTE T> Q UICK REFERENCE DATA DESCRIPTION The BB134 is a silicon, double-implanted variable capacitance diode in planar

1g3gt

Abstract: 1g3-gt general electric DIODE RECTIFIER P2T2 B-660 Scans-0017340 general electric
Contextual Info: iiMiAA K "m 1G3-GT <SmElBCTROñUCS r vT302° 1G3-GT diode Pa912-61 e1 DESCRIPTION A N D R A T I N G = = FOR TV HIGH-VOLTAGE-RECTIFIER APPLICATIONS The 1G3-GT is a filam entary diode designed for use in high-voltage low-current rectifier applications. It is especially

P 131 GB

Abstract: skiip 632 gb 120 315CTV713 skiip gb 120
Contextual Info: 5EMIKR0N SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol Values Unite 1200 900 600 - 4 0 . + 150 3000 51 600 1200 6480 210 V |Conditions 1> IGBT & Inverse Diode V ces V c c 9> Operating D C link voltage lc T i 3 Theatsink ~ 25 °C V,sol 4) IGBT & Diode

SKiiP 613 GB

Contextual Info: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C

Contextual Info: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41

skiip gb 120

Contextual Info: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C

SANSHA

Abstract: diode b73 SDF4000AA20 SDF4000AA40 SDF4000AA60 diode vrrm 7000 if 7000
Contextual Info: SANSHA ELECTRIC MFG CO 5bE D 7*^1243 00GG4S7 4T7 • S E M J DISC T Y P E DIODE SDF4000AA S D F 4 0 0 0 A A is a Flat Pack Diode designed for high power rectification. • If av = 4000A, V = 600V rrm • High Reliability by pressure mount construction. (Applications)

senju m705 solder wire

Abstract: Solder bar of Senju M705 senju M705 solder paste senju 533 solder paste spec Senju M705 solder bar GM4BW53340A PL80 senju solder bar C0806 senju m705 silver less solder wire 0.5 mm
Contextual Info: - _ _ • SPEC. No. S H A R P ISSU E May- ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4BW53340A CUSTOMERS' APPROVAL PRESENTED Date _ Date M rt, y m :_ f j ; 2&d~7

b745 diode

Abstract: B745 MOTOROLA b745 "Power Diode" I/b745 diode all silicon metal rectifier diode product List Silicon Controlled Rectifier 50 amp single phase fully controlled rectifier 221E AN1040
Contextual Info: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Schottky Power Rectifier MBRF745 The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features

DIODE B74

Abstract: opto 1010
Contextual Info: OPTO DIODE CORP SSE D • bflDma GGDDIST Tib ■ OPD "T ~ - V /- f j OD-8OOPP HI-REL RAD HARD IR EMITTERS FEATURES • High radiation tolerance • Super high reliability • High power output • Fast response • Hermetically sealed minature pill package

Contextual Info: O K I electronic components 0 LP226 Infrared LED with Collimator Lens GENERAL DESCRIPTION The OLD226 is a high-output GaAlAs infrared light emission micro-diode sealed with collimator lens in a TO-18 metal can package. High uniform ity of light distribusion and collimator lens enable

B748

Contextual Info: SEMIKRON V SKiiPPACK SK integrated intelligent Power PACK halfbridge SKiiP 192 GH 170 + Driver 272 CTV 713 A °C Case S2 SKiiP 192 GH 170 - 272 CTV Absolute Maximum Ratings Symbol Values |Conditions11 Units IGBT & Inverse Diode Vces V cc , 91 lc T j 3’

B745 MOTOROLA

Abstract: b745 diode b745 motorola an1040 RECTIFIER DIODES Motorola
Contextual Info: MOTOROLA Order this document by MBRF745/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e c tifie r MBRF745 The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features

SKiiP 613 GB

Contextual Info: s e MIKRDN SKiiP 612 GB 120-203 WT Absolute Maximum Ratings Symbol |Conditions 1 V a lu e s Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5) 490 1200 4300 93 V Operating DC link voltage Theatsink = 25 °C Theatsink = 25 °C; tp < 1 mS IGBT & Diode AC, 1 min.

mitsubishi diode relay

Abstract: TC 2C PD 6V relay 251C M54539P
Contextual Info: I bSMIBE? DD1SD3D ATI • MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54539P MITSUBISHI ÍGTL LOGIC 6-UNIT 700mA TRANSISTOR ARRAY W ITH CLAMP DIODE DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 54539P, 6 -c h a n n e l sink driver, consists of 12 N P N tran­

SKiiP 613 GB

Contextual Info: •I filBbib?! GGD5D51 SKiiP 192 G D L170 - 471 WT Absolute Maximum Ratings Symbol | Conditions11 Values Units 1700 1200 150 300 - 5 5 . . . + 150 3500 150 300 1450 10,5 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|is °C IGBT & Inve rse Diode

Contextual Info: Ô13bb71 SKiiP 102 GDL 120 - 403 WT E/U Absolute Maximum Ratings Symbol Values Units 1200 900 150 300 - 5 5 . . . + 150 3000 5) 150 300 1450 10,5 V V A A °C V A A A kA2s | Conditions IGBT & Inve rse Diode V ces Operating DC link voltage Vcc 10) Theatsink —25 °C

Contextual Info: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply

skiip gb 120

Contextual Info: 5EMIKRDN SKiiP 1092 GB 170 - 470 WT/FT Absolute Maximum Ratings Symbol | Conditions 1 Values Units 1700 1200 1000 2000 - 5 5 . . . + 150 4000 830 2000 8600 374 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ) .+ 85(70) V V kV/jXS °C IGBT & Inve rse Diode V ces

skiip gb 120

Contextual Info: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces

SKIIP 602 GB 120 301 FT

Contextual Info: s e m ik r d n SKiiP 602 GB 120 - 301 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5 600 1200 6480 210 V V A A °C A A A kA2s 18 30 75 - 25 0 ) . . . + 85(70) V V kV/[is °C | Conditions1> IGBT & Inve rse Diode

Contextual Info: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces

semikron skiip 1212 GB 120

Contextual Info: s e M IK R O n SKiiP 1212 GB 120 - 402 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 1200 2400 - 5 5 . . . + 150 3000 5 990 2400 8600 374 V V A A °C V A A A kA2s 18 30 75 - 25 0 ) . .+ 85(70) V V kV/|is °C | Conditions1> IGBT & Inve rse Diode

SKiiP 613 GB

Contextual Info: s e MIKRO n SKiiP 202 GD 120 - 300 WT Absolute Maximum Ratings Symbol | Conditions Values Units 1200 900 200 400 - 55 . . . + 150 3000 5 200 400 2160 23,4 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|±s 1> IGBT & Inve rse Diode V ces V is o |4)