DIODE B73 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal

SKiiP 613 GB

Contextual Info: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C

Contextual Info: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41

skiip gb 120

Contextual Info: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C

Contextual Info: AC, 1 min Operating / stor. temperature Q Sym bol vV¡sol 4> —I o o —I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK C o n d itio n s 1> Values U nits 3000 V -25.+85 °C IGBT and Inverse Diode V ces V cc5 lc Tj 3) If Ifm Ifsm l2t Diode) Driver

Unitrode Semiconductor

Contextual Info: 1ICR0SEMI CORP/ lilATERTOülN SDE D •I cJ347cib3 0D1S4Q1 b73 B IU N IT UM7000 SERIES UM7100 SERIES UM7200 SERIES PIN DIODE T - O l - t T Features • Voltage ratings to 1000V (UM7000 • Wide varle.ty of package styles • Rated average power dissipation to 10W

SKiiP 613 GB

Contextual Info: s e MIKRDN SKiiP 612 GB 120-203 WT Absolute Maximum Ratings Symbol |Conditions 1 V a lu e s Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5) 490 1200 4300 93 V Operating DC link voltage Theatsink = 25 °C Theatsink = 25 °C; tp < 1 mS IGBT & Diode AC, 1 min.

SKiiP 613 GB

Contextual Info: •I filBbib?! GGD5D51 SKiiP 192 G D L170 - 471 WT Absolute Maximum Ratings Symbol | Conditions11 Values Units 1700 1200 150 300 - 5 5 . . . + 150 3500 150 300 1450 10,5 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|is °C IGBT & Inve rse Diode

Contextual Info: Ô13bb71 SKiiP 102 GDL 120 - 403 WT E/U Absolute Maximum Ratings Symbol Values Units 1200 900 150 300 - 5 5 . . . + 150 3000 5) 150 300 1450 10,5 V V A A °C V A A A kA2s | Conditions IGBT & Inve rse Diode V ces Operating DC link voltage Vcc 10) Theatsink —25 °C

Contextual Info: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply

skiip gb 120

Contextual Info: 5EMIKRDN SKiiP 1092 GB 170 - 470 WT/FT Absolute Maximum Ratings Symbol | Conditions 1 Values Units 1700 1200 1000 2000 - 5 5 . . . + 150 4000 830 2000 8600 374 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ) .+ 85(70) V V kV/jXS °C IGBT & Inve rse Diode V ces

skiip gb 120

Contextual Info: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces

SKIIP 602 GB 120 301 FT

Contextual Info: s e m ik r d n SKiiP 602 GB 120 - 301 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5 600 1200 6480 210 V V A A °C A A A kA2s 18 30 75 - 25 0 ) . . . + 85(70) V V kV/[is °C | Conditions1> IGBT & Inve rse Diode

Diode LT 404

Contextual Info: s e M IK R D n SKiiP 312 GDL 120 - 404 WT E/U Absolute Maximum Ratings Symbol | Conditions Values Units 1200 - 5 5 . . . + 150 V V A A °C 3 0 0 0 5) V 240 A A A kA2s 11 IGBT & Invcsrse Diode Vces Operating DC link voltage Vc c 10) Theatsink — 2 5 °C

semikron skiip 1212 GB 120

Contextual Info: s e M IK R O n SKiiP 1212 GB 120 - 402 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 1200 2400 - 5 5 . . . + 150 3000 5 990 2400 8600 374 V V A A °C V A A A kA2s 18 30 75 - 25 0 ) . .+ 85(70) V V kV/|is °C | Conditions1> IGBT & Inve rse Diode

SKiiP 613 GB

Contextual Info: s e MIKRO n SKiiP 202 GD 120 - 300 WT Absolute Maximum Ratings Symbol | Conditions Values Units 1200 900 200 400 - 55 . . . + 150 3000 5 200 400 2160 23,4 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|±s 1> IGBT & Inve rse Diode V ces V is o |4)

Contextual Info: s e MIKRD n SKiiP 912 GB 120 - 303 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 900 1800 - 5 5 . . . + 150 3000 5 740 1800 6480 210 V V A A °C V A A A kA2s 18 30 75 -2 5 0 ).+ 85(70) V V kV/|iS °C |Conditions 1) IGBT & Inve rse Diode V ces

Contextual Info: s e M IK R D n SKiiP 592 GB 170 - 270 WT Absolute Maximum Ratings Symbol IG B T | Conditions1 Values Units Operating DC link voltage T h eatsink = 25 °C T heatsink = 25 °C; tp < 1 ms I G B T & Diode AC, 1 min. T h eatsink = 25 °C T h ea tsink = 25 °C| tp < 1 ms

Contextual Info: SEMIKRON SKiiP 292 GD 170 - 372 WT Absolute Maximum Ratings Symbol |Conditions1 V a lu e s Units 1700 1200 250 500 - 5 5 . . . + 150 4000 230 500 2160 23,4 V V A A °C V A A A kA2S 18 30 75 - 2 5 . . . + 85 V V kV/|xs °C IGBT & Inverse Diode V ces V c c 101

semikron skiip 792

Contextual Info: s e MIKRO n SKiiP 792 GB 170 - 370 WT/FT Absolute Maximum Ratings Sym bol Values Units 1700 1200 750 1500 - 5 5 . . . + 150 4000 620 1500 6480 210 V V A A °C V A A A kA2s 18 30 75 - 25 0 . . . + 85(70) V V kV/ns °C | C o n d itio n s 1> IGBT & Inve rse Diode

Contextual Info: s e MIKRO n SKiiP 362 GD 060 - 352 WT Absolute Maximum Ratings Symbol Values Units Operating DC link voltage T h e a ts in k —25 °C T h eatsin k = 25 °C; tp < 1 ms IGBT & Diode AC, 1 min. T heatsin k = 25 °C T heatsin k = 25 °C; tp < 1 ms tp = 10 ms; sin.; T j = 150 °C

Contextual Info: s î M IK R D n SKiiP 262 GD 060 - 351 WT Absolute Maximum Ratings Symbol V a lu e s Units 600 400 200 400 - 5 5 . . . + 150 2500 200 400 1450 10,5 V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/ns °C | C onditions1 IGBT & Inve rse Diode VcES Operating DC link voltage

Contextual Info: FEA TU RES SP2T J • 2 0 -2 0 0 0 MHz ■ Very Low Insertion Loss ■ High Intercept Points ■ Non-Reflective ■ 14 Pin DIP MODEL NO. DS0966-1 PIN Diode SP2T " i— I 0" GND 14 + 12V 13 + 5V 12 GND 11 C1 10 O o Q Q 0 0 O 5 GND Ó 6 GND I j PART ID E N T IF IC A T IO N

Contextual Info: • fll3fc. fc. 71 □□□5D31 310 S K iiP P A C K S K iiP 202 G D L 120 - 400 W T E/U A b s o lu te M a xim u m R a tin g s Values Units IGBT & Inve rse Diode V ces Operating D C link voltage V c c 10) T h e a tsin k = 25 °C lc T h e a tsin k — 25 °C; tp < 1 ms