DIODE B7 Search Results

zener diode rd20e b2

Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.

GD170

Contextual Info: SKiiP 292 GD 170 - 375 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM

skiip gb 120

Contextual Info: SKiiP 2013GB122-4DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms

semikron skiip 400 gb

Contextual Info: SKiiP 613GD061-3DUL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms

1480 nm laser diode high power

Contextual Info: O K I electronic components OL403N-100 1.48 jam High-Power Laser Diode GENERAL DESCRIPTION The OL403N-100 is a 1.48 |xm, InGaAsP/InP high-power laser diode which can be a light source for fiber-optic communication systems and optical instruments. FEATURES

oki old122

Abstract: OLD122 OLD122C
Contextual Info: OKI electronic components OLP1 2 2 _ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD122 is a high-output GaAs infrared light emission diode sealed with a glass lens in a TO18 metal case. Its light emission wave peaks at940 nm. Because of its sharp directivity, multiple units

OLD123

Abstract: Infrared Emitting Diode OLP123 1000 nm light emitting diode
Contextual Info: O K I electronic components OLP123_ GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD123 is a high-output GaAs infrared light emission diode sealed with a flat glass in a TO-18 metal case. Its light emission wave peaks at 940 nm. Beause of its sharp directivity, multiple units

LF400

Abstract: R-1525 OL561N-25 OL564N-25
Contextual Info: O K I electronic components OL561N-25, OL564N-25 1.55 |im High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL561N-25 and OL564N-25 are 1.55 Jim, extremely high power laser-diode DIP modules with single-mode fiber pigtails. The Multi-Quantum Well MQW structure laser diodes achieve a single­

Contextual Info: Formosa MS BAT54W / BAT54 AW / BAT54 CW / BAT54 SW SMD Small Signal Schottky Diode List List. 1 Package outline. 2

Contextual Info: O K I SEMICONDUCTOR GROUP 23E D Hi b72M24G 0DD7TTÔ 1 • DESCRIPTION OKI OL350A-4 is a 1.3/im high power laser diode DIP module with single mode fiber pigtail. Using excellent performance VIPS V-grooved Innerstripe on P-substrate LD, single mode fiber output

BAT378W

Contextual Info: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)

BAT378W

Abstract: MARKING CODE B7
Contextual Info: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)

Contextual Info: TOSHIBA {DISCRETE/OPTO} iï b7 dÊT^O^SSO DODiañ? D | ~ 9097250 TOSHIBA PI SCRETE/OPTO _ 67C 09287 1N4148 • ' ù 4! Dt Silicon Epitaxial P lan ar Type Diode U n i t In m m HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. F EATURES: . Low Forward Voltage

Contextual Info: 0 K I SE M ICONDUCTOR GROUP 53E » • b7 S « W 0007180 H 1.55/im Hign Power Laser Diode OL501A-20, OL503A-20 • DESCRIPTION OKI OL501A-20, OL503A-20 are 1.55/im InGaAsP/lnP high power laser diodes developed as light sources for fiber-optic communications and optical equipment.

photo sensor

Abstract: barcode reader circuit photo sensor pin diagram "Photo Interrupter" barcode reader distance sensor circuit OC800 paper sensor PHOTO SENSOR of application Photodetector Sensor
Contextual Info: OKI electronic components OC800 Reflector-Type Photo Interrupter GENERAL DESCRIPTION The O C 8OOis a reflector-type photo interrupter that contains a high-output infrared light-emitting diode and high-sensitivity phototransistor. FEATURES • High output current

QS32XR245

Abstract: QS3R245
Contextual Info: QS32XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 16-Bit Low Resistance MultiWidthTM Bus Switches QS32XR245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs to outputs

QS32XL2384

Abstract: QS32XL384
Contextual Info: QS32XL384, QS32XL2384 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS 20-Bit Bus Switches QS32XL384 QS32XL2384 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

B9 datasheet

Abstract: B9 fet datasheet QS3LR384
Contextual Info: QS3LR384 ADVANCE INFORMATION QuickSwitch Products High-Speed CMOS 10-Bit Low Power, Low Resistance Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS3LR384 ADVANCE INFORMATION 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC

QS32XR384

Abstract: B10-B14
Contextual Info: QS32XR384 QuickSwitch Products High-Speed CMOS 20-Bit Low Resistance Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32XR384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 2.5Ω bidirectional switches connect inputs

NPN transistor 2n3904 beta value

Abstract: 2N3904 331 transistor 2N3904 331 2N3904TA EMC1043 EMC1043-1-ACZL-TR EMC1043-2-ACZL-TR EMC1043-3-ACZL-TR EMC1043-4-ACZL-TR EMC1043-5-ACZL-TR
Contextual Info: EMC1043 1°C Triple Temperature Sensor with Beta Compensation and Hotter of Two Zones PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC1043 is a family of System Management Bus SMBus temperature sensors that monitors three temperature zones, one internal diode and two

QS3L384

Abstract: QS3L2384
Contextual Info: QuickSwitch Products qs3L384 High-Speed, Low Power qs3L2384 CMOS 10-Bit Bus Switches FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • bidirectional switches connect inputs to outputs • Zero propagation delay QS3L384 ;

74245 applications

Abstract: QS32X245 ttl 74245 B14 z diode Double high-speed switching diode QS32X2245 QVSOP
Contextual Info: QS32X245, QS32X2245 QuickSwitch Products High-Speed CMOS QuickSwitch Double Width Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32X245 QS32X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

QS3384

Abstract: B9 fet datasheet QS32384 3384
Contextual Info: QS3384, QS32384 QuickSwitch Products High-Speed CMOS 10-Bit Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS3384 QS32384 1 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

diode b29

Abstract: QS34XVH245 B14 diode on semiconductor b12 diode DIODE B12 51 DIODE B21 DIODE B31 a30 DIODE DIODE A30
Contextual Info: QS34XVH245 QuickSwitch Products 3.3V 32-Bit Bus Switch for Hot Swap Applications HotSwitchTM Q QUALITY SEMICONDUCTOR, INC. QS34XVH245 FEATURES/BENEFITS DESCRIPTION • N channel FET switches with no parasitic diode to VCC – No DC path to VCC or GND