DIODE B4 Search Results

DCP100

Abstract: X9520 E1 to fiber optic converter circuit
Contextual Info: Hot Pluggable X9520 Preliminary Information Fiber Channel / Gigabit Ethernet Laser Diode Control for Fiber Optic Modules Triple DCP, POR, 2 kbit EEPROM Memory, Dual Voltage Monitors FEATURES DESCRIPTION • Three Digitally Controlled Potentiometers DCPs

74245 applications

Abstract: QS32X245 ttl 74245 B14 z diode Double high-speed switching diode QS32X2245 QVSOP
Contextual Info: QS32X245, QS32X2245 QuickSwitch Products High-Speed CMOS QuickSwitch Double Width Bus Switches Q QUALITY SEMICONDUCTOR, INC. QS32X245 QS32X2245 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

VS-HFA50PA60

Contextual Info: VS-HFA50PA60CPbF, VS-HFA50PA60C-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 25 FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • Compliant to RoHS Directive 2002/95/EC • Designed and JEDEC-JESD47

Contextual Info: SKN 70 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode ! ! .! 3 7 1 8   *        6  = " 4 =  = " 4 = #$ 9>= #$ 9>" #$ 9>4 #$ 9>= .( 3 9 ( 1 : ";  3 47 <+6 # 9>= # 9>"

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 October 1999. INCH-POUND MIL-PRF-19500/516D 23 July 1999 SUPERSEDING MIL-S-19500/516C 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE

2SK554

Abstract: 2SK555 SA-2A diode DG130 ah7a
Contextual Info: 4M=lb2ÜS DG130Ö7 b43 blE T> 2SK554,2SK555 I H I T 1! HITACHI/COPTOELECTRONICS S ILIC O N N-CHAIMNEL M O S FET HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance. • High Speed S w itch in g . • Low Drive C urrent. • No Secondary Breakdown.

Contextual Info: FCT Interface Logic HARRIS S E M I C O N D U C T O R RCA HARRIS INTERSIL GE CD54/74FCT651, CD54/74FCT651AT CD54/74FCT652, CD54/74FCT652AT July 1990 AO A1 A 2A 3A4 A5A6A7 - A DATA PORT • . • • . . • 11 BO B1 B2 B3 B4 BS B6 B7 Octal Bus Transceivers/

sec d 5072 transistor

Abstract: 1250h 2912 TRANSISTOR PNP D60H diode 5819 AT24C02B PWM 555 FAN CONTROL 127C 2N3904 2N3906
Contextual Info: EMC2101 SMBus Fan Control with 1°C Accurate Temperature Monitoring PRODUCT FEATURES Datasheet GENERAL DESCRIPTION „ The EMC2101 is an SMBus 2.0 compliant, integrated fan control solution complete with two temperature monitors, one external and one internal. Each

SKiiP 11 NAC

Abstract: semikron skiip 11 nac
Contextual Info: SKiiP 03NAC12T4V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter $3  < ) $3 3 , ' 0*    !   , (' 2;74 0 5 Values Units /(77 ;*' 2;*'4 ( = (7 )   ) 8 7###9/;' 0 > 2>4 (   8 7###9/;'

irfp35

Contextual Info: IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 150 Qgs (nC) 23 Qgd (nC) 80 Configuration Single D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFP260

Abstract: IRF*260
Contextual Info: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.30 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve

irfps37n50a

Contextual Info: IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) () VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 12 Qgs (nC) 1.9 Qgd (nC) 6.5 Configuration Single DPAK (TO-252) D IPAK (TO-251) DESCRIPTION D D G G • Halogen-free According to IEC 61249-2-21

Contextual Info: SEMiX 604GB126HD Absolute Maximum Ratings Symbol Conditions IGBT  /  * 2 /  ')1 * 267   ()*.       # '(11  )3) "   41 * 5') " 411 " 9 (1  /  '() * '1 >   () * )@) "   41 * @A1 " 411 " ()11 " :11 " B 51 , C ')1

Contextual Info: SKiiP 14NAB065V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper -%4  : -%4  2 3+    #    2 )( 6708 3  2 )( 6708 3+ # ; < . ? Values Units &00 )9 6)8 (= 6//8 > )0   - @ /0 $$$ A <(0 3 )& 6<98

marking code C4 Sot 23-5

Abstract: sc70-3 PCB PAD Marking Code ABC marking code 54 marking code tc sot 363 AN1124 SC70-6 agilent marking code 8C marking code part marking ab sc-70
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-281x Series Features • Surface Mount Packages • Low Flicker Noise • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

npn 2n3906

Abstract: NE16
Contextual Info: NE1617A Temperature monitor for microprocessor systems Rev. 5 — 20 March 2012 Product data sheet 1. General description The NE1617A is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature of a remote sensor. The remote sensor is a

Contextual Info: b4E 2L14130 0007472 74fl D DALLAS SEMI CONDUCT OR D AL CORP DALLAS SEMICONDUCTOR DS5000FP Soft M icrocontroller Chip FEATURES PIN ASSIGNMENT • 8051 compatible uC adapts to its task - Accesses between SK and 64K of nonvolatile SRAM - In-system programming via on-chip serial port

APT8030LVR

Contextual Info: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

T0844

Contextual Info: SiE808DF Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling

Contextual Info: SK60GB125 % , -. /        Absolute Maximum Ratings Symbol Conditions IGBT 0+ %1 , -. / & %1 , 3-. / &89 IGBT Module SK60GB125  3-44 ( .3 5 % , 64 / 7. 5 344 5 : -4 ( %1 , 3-. / 34 ? % , -. / .@ 5 % , 64 / 76 5 &89, -  &

Contextual Info: SK100GD066T  3 #4 5*"     & Absolute Maximum Ratings Symbol Conditions IGBT 1* 6 3 #4 5* * 6 3 !:4 5* *< 899 1 !94 +  3 :9 5* ;4 + #99 + = #9 1 6 3 !#4 5* 8 A  3 #4 5* BB +  3 :9 5* :B + !#9 + *<3 # ' * SEMITOP 4

95n4f

Abstract: 95n4f3 STD95N4F3
Contextual Info: STB95N4F3, STD95N4F3 STP95N4F3 N-channel 40 V, 5.0 mΩ, 80 A STripFET III Power MOSFET in D²PAK, DPAK, TO-220 Features Order codes VDSS RDS on max. Pw ID TAB TAB STB95N4F3 STD95N4F3 40 V STP95N4F3 < 5.8 m Ω 80 A TAB 110 W < 6.2 mΩ 3 1 • Standard threshold drive