DIODE B4 Search Results

Contextual Info: b427555 0G37b3S üflê « N E C E b2E D N E C ELECTRONICS INC PHOTO DIODE NDL5102C 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5102C is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission

Contextual Info: bBE D N E C • b427525 GQ37477 77S * N E C E LASER DIODE ELECTRONICS INC / NDL5082 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL5082 is a 1 310 nm laser diode especially designed fo r optical data communications. The Mesa-type DC-PBH Double

Contextual Info: bEE I> • b4E7SSS □□374S4 fiSM HNECE N E C ELECTRONICS INC _ LASER DIODE MODULE / NDL5717P 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5717P ¡s a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a

Contextual Info: 30E D • b427525 002^252 S / N EC LASER DIODE ELECTRONICS INC NDL5050A 1 550 nm O P TIC A L FIBER COM M UNICATIONS InGaAsP DOUBLE HETERO STR U C TU R E LA SER DIODE DESCRIPTION NDL5050A is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DC*

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Abstract: code diode b2e L7561 NDL7561P1 diode so3 NDL7561P
Contextual Info: N E C ELECTRONICS INC b2E D • bH27SSS □OBÏRÔS b47 INECE PRELIMINARY DATA SHEET LASER DIODE MODULE N D L7561P, NDL7561P1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION N DL7561P and NDL7561P1 are 1 550 rim new ly developed Multiple Quantum W ell MQW structure pulsed laser diode

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: NEC ELECTRONICS INC fc.EE D • b427S25 D03ÛD17 5b4 « N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola­

Contextual Info: N E C ELECTRONICS INC b£E ]> • b427525 003?=]^ T4Ü BINECE DATA SHEET NEC LASER DIODE MODULE NDL5776P ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE W ITH SINGLEMODE FIBER DESCRIPTION NDL5776P is a 1 550 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is

NDL5407P

Abstract: NDL5407P1 V8580
Contextual Info: N E C ELECTRONICS INC b2E D • b427525 DD3ñDTfi 7b3 ■ NECE DATA SHEET N EC PHOTO DIODE NDL5407P, NDL5407P1 ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS #80 jam InGaAs PIN PHOTO DIODE MODULE WITH MMF NDL5407P and NDL5407P1 are InGaAs PIN photo diode modules with GI-50/125 multimode fiber pigtail. They are designed

Contextual Info: 30E D NEC • b4E? 555 OGai Sl l 7 ■ ELECTRONICS INC LA S ER DIODE / NDL5003 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL50Û3 is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DCPBH Double Channel Planar Buried Heterostructure can achieve stabfe fundamental oscillation in wide temperature range.

Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.

FAH DIODE

Abstract: FAH diode 28
Contextual Info: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The

1B89

Abstract: RT-70
Contextual Info: N E C ELE CTRONICS INC b5E ]> • b4E7525 00300^1 3QT ■ NECE DATA SHEET NEC PHOTO DIODE N D L 5405L ELECTRON DEVICE 1 0 0 0 t o i 600 nm OPTICAL FIBER COMMUNICATIONS 0 8 0 um InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405L is an InGaAs PIN photo diode with micro lens for a light detector of long wavelength transmission systems. It

Contextual Info: b2E » • N E C b427525 D037b4ci b72 W N E C E PHOTO DIODE ELECTRONICS INC / NDL5200 OPTICAL FIBER C O M M U N IC A TIO N S Ge PHOTO DIODE DESC R IPT IO N N D L 5 2 0 0 Germ anium Photo diode is designed for a detector o f long wavelength fiber transm ission systems.

Contextual Info: N EC ELECTRONI CS INC b2E D • b427S2S DDBflOll OHb M N E C E DATA SHEET NEC LASER DIODE MODULE N D L5604P ELECTRON DEVICE 1 3 1 0 n m OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5604P is a 1 310 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module w ith singlemode fiber. It incorpo­

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Contextual Info: b£E » • b4S7525 0D37S04 553 MNECE_ N E C ELECTRONICS INC LASER DIODE /_ NDL5735PA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP D C P B H LASER DIODE MODULE DESCRIPTION N D L 5 7 3 5 P A is a 1 310 nm laser diode DIP m odule w ith singlemode fib e r w ith o u t therm o-electric cooler. It incorporates

7551P

Abstract: NDL7511P1
Contextual Info: N E C ELECTRONICS INC b2E 5 • b4275HS DQ37tì7c1 DS2 « N E C E PRELIMINARY DATA SHEET / / LASER DIODE MODULE N P L 7 5 5 1 P , N P L 7 5 51 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION NDL7551P and NDL7551P1 are 1 550 nm newly developed Multiple Quantum Well MOW structure pulsed laser diode

Contextual Info: N E C ELECTRONICS b2E INC D b427SE5 0 Q37ciSfl 32Ô « N E C E DATA SHEET NEC LASER DIODE MODULE N DL5733P ELECTRON DEVICE 1 310 nm InGaAsP DC-PBH LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESCRIPTIO N NDL5733P is a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a

NDL5731P

Abstract: L5720P
Contextual Info: N E C ELECTRONICS INC upf f _ b42?S5S 0037T4T 315 « N E C E J> m PRELIMINARY DATA SHEET NEC LASER DIODE NDL5728P, NDL5728P1 ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE W ITH SINGLEMODE FIBER DES C R IP TIO N N D L5728P and NDL5728P1 are 1 55 0 nm laser diode coaxial modules with singlemode fiber. It incorporates InGaAs monitor