DIODE B4 Search Results
DIODE B4 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
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Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
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Zener Diode, 5.6 V, USM | Datasheet |
DIODE B4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: b427555 0G37b3S üflê « N E C E b2E D N E C ELECTRONICS INC PHOTO DIODE NDL5102C 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5102C is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission |
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b427555 0G37b3S NDL5102C NDL5102C | |
Contextual Info: bBE D N E C • b427525 GQ37477 77S * N E C E LASER DIODE ELECTRONICS INC / NDL5082 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL5082 is a 1 310 nm laser diode especially designed fo r optical data communications. The Mesa-type DC-PBH Double |
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b427525 GQ37477 NDL5082 NDL5082 | |
Contextual Info: bEE I> • b4E7SSS □□374S4 fiSM HNECE N E C ELECTRONICS INC _ LASER DIODE MODULE / NDL5717P 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5717P ¡s a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a |
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NDL5717P b427SES INIDL5717P | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 | |
Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 | |
Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 | |
NDL5407P
Abstract: NDL5407P1 V8580
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b427525 NDL5407P, NDL5407P1 NDL5407P NDL5407P1 GI-50/125 NDL5407P L5500 V8580 | |
Contextual Info: N E C ELECTRONICS INC b2E ]> b4275B5 003004? 2T1 « N E C E DATA SHEET LASER DIODE NEC NDL5850D1 ELECTRON DEVICE 1 5 50 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .5 Gb/s DESCRIPTION NDL5850D1 is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed |
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b4275B5 NDL5850D1 NDL5850D1 30sec bM2752S | |
Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode. |
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NDL7001 NDL7001 b4S752S b427525 b427525 | |
1B89
Abstract: RT-70
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b4E7525 5405L NDL5405L RL5500C L5500P* L5500 NDL5405 L5405L L5510C L5405P* 1B89 RT-70 | |
Contextual Info: N EC ELECTRONI CS INC b2E D • b427S2S DDBflOll OHb M N E C E DATA SHEET NEC LASER DIODE MODULE N D L5604P ELECTRON DEVICE 1 3 1 0 n m OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5604P is a 1 310 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module w ith singlemode fiber. It incorpo |
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b427S2S L5604P NDL5604P b42752S 0D3flG14 NDL5604P 500pS b427S2S bM27525 | |
7551P
Abstract: NDL7511P1
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b4275HS DQ37t NDL7551P NDL7551P1 L427525 14-pin NDL7101 NDL7111 NDL7500P NDL7510P 7551P NDL7511P1 | |
Contextual Info: N E C ELECTRONICS b2E INC D b427SE5 0 Q37ciSfl 32Ô « N E C E DATA SHEET NEC LASER DIODE MODULE N DL5733P ELECTRON DEVICE 1 310 nm InGaAsP DC-PBH LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESCRIPTIO N NDL5733P is a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a |
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b427SE5 Q37ciSfl DL5733P NDL5733P NDL5717P NDL5720P NDL5731P NDL5735PA NDL5736PA | |
NDL5731P
Abstract: L5720P
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0037T4T NDL5728P, NDL5728P1 L5728P NDL5728P1 NDL5723P* NDL5731P NDL5735PA NDL5736PA 14PIN L5720P | |
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Contextual Info: DATA SHEET LASER DIODE NDL7563P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber. |
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NDL7563P 1550nm 1550nm NDL7563P NDL7563P1 10-J-H 10/iS | |
Contextual Info: 30E » • b427525 002=1201 1 ■ N E C ELECTRONICS INC T-H1-67 LASER DIODE MODULE / NDL5730P 1 310 nm O PTICA L FIBER COM M UNICATIONS InGaAsP DC-PBH LA SER DIODE M ODULE D E S C R IP T IO N N D L5730P is a 1 3 1 0 nm laser diode Butterfly Package module with singlemode fiber and internal thermo-electric cooler, it is |
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b427525 T-H1-67 NDL5730P L5730P L457S5S | |
Contextual Info: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is |
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37SM7 NDL5600 b427S2S b427525 GQ37SS0 NDL5600 | |
DH60-14AContextual Info: DH60-16A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1600 V 60 A 230 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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DH60-16A 60747and 20110908b DH60-14A | |
Contextual Info: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses |
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DSS6-0025BS O-252 60747and 20110915a | |
laser diode chip
Abstract: nec 2222 NDL5850D DIODE CHIP
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NDL5850D NDL5850D bM27SES laser diode chip nec 2222 DIODE CHIP | |
Contextual Info: b2E D • b427S2S G03747S «ÎT2 «NECE / N E C ELECTRONICS INC LIG HT EM ITTIN G DIODE / N D L 4 10 5 L 1 8 5 0 nm OPTICAL FIBER COMMUNICATIONS AIGaAs LIGHT EMITTING DIODE DE SC R IPTIO N N D L410 5L1 is an AIGaAs double heterostructure lig h t e m ittin g diode, especially designed fo r a lig h t source fo r optic a l fib e r |
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427S2S G03747 GI-50 GI-50 | |
Contextual Info: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values |
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DSS6-0045AS O-252 6-0045AS 60747and 20110915a | |
laser diode Spectral Width 1 nm, 1550 nm, power 2Contextual Info: DATA SH E E T LASER DIODE NDL7553P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber. |
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NDL7553P 1550nm NDL7553P1 bMS752S L427525 laser diode Spectral Width 1 nm, 1550 nm, power 2 | |
Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet production data Description A K K K A TO-220AC STPSC8H065D K A NC D²PAK STPSC8H065G-TR K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon |
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STPSC8H065 O-220AC STPSC8H065D STPSC8H065G-TR DocID023603 |