DIODE B4 Search Results

Contextual Info: b427555 0G37b3S üflê « N E C E b2E D N E C ELECTRONICS INC PHOTO DIODE NDL5102C 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5102C is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission

Contextual Info: bBE D N E C • b427525 GQ37477 77S * N E C E LASER DIODE ELECTRONICS INC / NDL5082 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL5082 is a 1 310 nm laser diode especially designed fo r optical data communications. The Mesa-type DC-PBH Double

Contextual Info: bEE I> • b4E7SSS □□374S4 fiSM HNECE N E C ELECTRONICS INC _ LASER DIODE MODULE / NDL5717P 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5717P ¡s a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

NDL5407P

Abstract: NDL5407P1 V8580
Contextual Info: N E C ELECTRONICS INC b2E D • b427525 DD3ñDTfi 7b3 ■ NECE DATA SHEET N EC PHOTO DIODE NDL5407P, NDL5407P1 ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS #80 jam InGaAs PIN PHOTO DIODE MODULE WITH MMF NDL5407P and NDL5407P1 are InGaAs PIN photo diode modules with GI-50/125 multimode fiber pigtail. They are designed

Contextual Info: N E C ELECTRONICS INC b2E ]> b4275B5 003004? 2T1 « N E C E DATA SHEET LASER DIODE NEC NDL5850D1 ELECTRON DEVICE 1 5 50 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .5 Gb/s DESCRIPTION NDL5850D1 is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed

Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.

1B89

Abstract: RT-70
Contextual Info: N E C ELE CTRONICS INC b5E ]> • b4E7525 00300^1 3QT ■ NECE DATA SHEET NEC PHOTO DIODE N D L 5405L ELECTRON DEVICE 1 0 0 0 t o i 600 nm OPTICAL FIBER COMMUNICATIONS 0 8 0 um InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405L is an InGaAs PIN photo diode with micro lens for a light detector of long wavelength transmission systems. It

Contextual Info: N EC ELECTRONI CS INC b2E D • b427S2S DDBflOll OHb M N E C E DATA SHEET NEC LASER DIODE MODULE N D L5604P ELECTRON DEVICE 1 3 1 0 n m OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5604P is a 1 310 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module w ith singlemode fiber. It incorpo­

7551P

Abstract: NDL7511P1
Contextual Info: N E C ELECTRONICS INC b2E 5 • b4275HS DQ37tì7c1 DS2 « N E C E PRELIMINARY DATA SHEET / / LASER DIODE MODULE N P L 7 5 5 1 P , N P L 7 5 51 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION NDL7551P and NDL7551P1 are 1 550 nm newly developed Multiple Quantum Well MOW structure pulsed laser diode

Contextual Info: N E C ELECTRONICS b2E INC D b427SE5 0 Q37ciSfl 32Ô « N E C E DATA SHEET NEC LASER DIODE MODULE N DL5733P ELECTRON DEVICE 1 310 nm InGaAsP DC-PBH LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESCRIPTIO N NDL5733P is a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a

NDL5731P

Abstract: L5720P
Contextual Info: N E C ELECTRONICS INC upf f _ b42?S5S 0037T4T 315 « N E C E J> m PRELIMINARY DATA SHEET NEC LASER DIODE NDL5728P, NDL5728P1 ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE W ITH SINGLEMODE FIBER DES C R IP TIO N N D L5728P and NDL5728P1 are 1 55 0 nm laser diode coaxial modules with singlemode fiber. It incorporates InGaAs monitor

Contextual Info: DATA SHEET LASER DIODE NDL7563P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.

Contextual Info: 30E » • b427525 002=1201 1 ■ N E C ELECTRONICS INC T-H1-67 LASER DIODE MODULE / NDL5730P 1 310 nm O PTICA L FIBER COM M UNICATIONS InGaAsP DC-PBH LA SER DIODE M ODULE D E S C R IP T IO N N D L5730P is a 1 3 1 0 nm laser diode Butterfly Package module with singlemode fiber and internal thermo-electric cooler, it is

Contextual Info: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is­

DH60-14A

Contextual Info: DH60-16A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1600 V 60 A 230 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

Contextual Info: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses

laser diode chip

Abstract: nec 2222 NDL5850D DIODE CHIP
Contextual Info: N E C ELECTRONI CS I NC fc.EE D • b4 5 7 S2 S 0 0 3 0 0 4 3 b5b H N E C E DATA SHEET NEC LASER DIODE NDL5850D ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .4 Gb/s DESCRIPTION NDL5850D is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed

Contextual Info: b2E D • b427S2S G03747S «ÎT2 «NECE / N E C ELECTRONICS INC LIG HT EM ITTIN G DIODE / N D L 4 10 5 L 1 8 5 0 nm OPTICAL FIBER COMMUNICATIONS AIGaAs LIGHT EMITTING DIODE DE SC R IPTIO N N D L410 5L1 is an AIGaAs double heterostructure lig h t e m ittin g diode, especially designed fo r a lig h t source fo r optic a l fib e r

Contextual Info: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values

laser diode Spectral Width 1 nm, 1550 nm, power 2

Contextual Info: DATA SH E E T LASER DIODE NDL7553P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Description A K K K A TO-220AC STPSC8H065D K A NC D²PAK STPSC8H065G-TR K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon