DIODE B3 Search Results

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

BB619

Abstract: 552 diode
Contextual Info: 711002b G0ba37*ì B3Q I PHIN BB619 VHF VARIABLE CAPACITANCE DIODE The BB619 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band B up to 460 MHz in all-band tuners. The diode is encapsulated in a hermetically sealed SOD 123 plastic envelope suitable fo r surface mounting.

Contextual Info: b3E D • fc.b53331 003bl73 373 H A P X rnm ps Product specification Silicon planar diode DESCRIPTION The BA582 is a silicon planar high performance band switching diode, intended for low loss band switching

Contextual Info: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode

ingaasp

Abstract: Pulsed Laser 1550nm
Contextual Info: DATA SHEET LASER DIODE NDL7564P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7564P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode liber.

BAS32

Abstract: diode bas32 IEC134 BAS32 sod80
Contextual Info: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat

Contextual Info: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses

Contextual Info: • International S Rectifier 4Ö554S2 001b?b3 TbO ■ INR INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

Contextual Info: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values

zener diode rd20e b2

Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
Contextual Info: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.

switching transistor msd

Abstract: Mil-R-39016/11 tyco mil relay
Contextual Info: MS MSD MSDD MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MS MSD MSDD MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

C 828 Transistor

Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
Contextual Info: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Contextual Info: ^ 5 3 ^ 3 1 002b314 bTE N AMER PHILIPS/DISCRETE APX b3E BAV45 D _ S PICOAMPERE DIODE Silicon diode in a metal envelope. It has an extremely low leakage current over a wide temperature range combined with a low capacitance and is not sensitive to light. It is intended for clamping,

Contextual Info: SONY SLD322V High Power Density 0.5 W Laser Diode Description Package Outline U n it: mm The SLD322V is a high power, gain-guided laser diode produced by MOCVD method*1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

smd code book B3 transistor

Abstract: PMEM4010ND PMEM4010PD TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD npn MARKING CODE PR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor/Schottky diode module Product specification Supersedes data of 2002 Oct 28 2003 Jul 04 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND

TRANSISTOR SMD MARKING CODE

Abstract: TRANSISTOR SMD MARKING CODE A1 transistor data cd 100 smd code book B3 transistor MARKING SMD npn TRANSISTOR pulse to sinewave convertor smd transistor marking B3 TRANSISTOR SMD MARKING CODE UA schottky transistor npn PMEM4010PD
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 PMEM4010ND NPN transistor/Schottky diode module Product specification 2002 Oct 28 Philips Semiconductors Product specification NPN transistor/Schottky diode module PMEM4010ND PINNING FEATURES • 600 mW total power dissipation

FF400R12KT3

Contextual Info: Technische Information / technical information FF400R12KT3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und EmCon High Efficiency Diode 62mm C-series module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

RB160-40

Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
Contextual Info: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148

Contextual Info: LM95245 LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm BJT Beta Compensation Technology for 45nm Process Literature Number: SNIS148F LM95245 Precision Remote Diode Digital Temperature Sensor with TruTherm® BJT Beta Compensation Technology for 45nm

FP40R12KE3

Contextual Info: Technische Information / technical information FP40R12KE3 IGBT-Module IGBT-modules EconoPIM 2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode EconoPIM™2 module with trench/fieldstop IGBT3 and Emitter Controlled 3 diode IGBT-Wechselrichter / IGBT-inverter

Irf 1540 N

Abstract: Irf 1540 G LC7566 Irf 1540 ndl5654p LC-7566 ld2sc
Contextual Info: N E C ELECTRONICS INC bSE D • tjMS7SES GD38Ü20 05R * N E C E DATA SHEET NEC LASER DIODE MODULE NDL5654P ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5654P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module with singlemode fiber. It incorpo­

DF400R12KE3

Contextual Info: Technische Information / technical information DF400R12KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und EmCon High Efficiency Diode 62mm C-series module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: bbS3R31 DDS7QSS T4b * A P X b'lE » N AMER PHILIPS/DISCRETE Philips Semiconductors Preliminary specification 1PS184 High speed double diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High speed Per diode • General application. CONDITIONS