DIODE B2L Search Results
DIODE B2L Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE B2L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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code diode b2lContextual Info: MBR0520L SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0718, Rev. - Green Products MBR0520L SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection |
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mbr0520ln0718od-123mil-std-202xpressed+1 | |
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Contextual Info: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application. |
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rej03g0043-0400ptsp0002za-a | |
MARK B3L
Abstract: diode b2l A1L DIODE zener a1 7 HZU11A1L HZU11A2L HZU11A3L HZU11B1L HZU11B2L HZU11B3L
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rej03g0043-0400ptsp0002za-amark b3ldiode b2l+8 | |
B140
Abstract: CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l
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cd216a-b120ldo-216aars-481-ab140+4 | |
smd diode B140
Abstract: smd b140 diode b3l JEDEC DO-216aa code diode b2e DO216AA
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cd216a-b120ldo-216aasmd diode b140smd b140+4 | |
smd diode B140
Abstract: DIODE B140
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cd216a-b120ldo-216aasmd diode b140diode b140 | |
CD216A-B120L
Abstract: B140 CD216A-B120R CD216A-B130L CD216A-B140 code diode b2l diode b140
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cd216a-b120ldo-216aars-481-ab140+5 | |
diode b2l
Abstract: code diode b2l diode b3l 050 B3L DO216-AA DO216AA
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cd216a-b120ldo-216aadiode b2lcode diode b2l+4 | |
code diode b2l
Abstract: B2L DIODE DO216AA B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140
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cd216a-b120ldo-216aars-481-acode diode b2l+6 | |
diode b140
Abstract: diode b2l code diode b2l B2L DIODE b4s 050 B140 CD216A-B120L CD216A-B120R CD216A-B130L CD216A-B140
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cd216a-b120ldo-216aars-481-ae/ipa0303+9 | |
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Contextual Info: APT50M75B2LL G APT50M75LLL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 500V POWER MOS 7 R MOSFET 57A 0.075 Ω B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching |
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apt50m75b2llapt50m75lllpuls22o-247 | |
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Contextual Info: APT5010B2LL APT5010LLL 0.100Ω 500V 46A R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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apt5010b2llapt5010lllo-264o-247 | |
009F
Abstract: APT6010B2LL APT6010LLL 6710 mosfet
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apt6010b2llapt6010lllo-264o-247+2 | |
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Contextual Info: APT6013B2LL APT6013LLL 0.130Ω 600V 43A R POWER MOS 7 MOSFET B2LL T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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apt6013b2llapt6013lllo-264o-247 | |
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DD2030Contextual Info: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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apt6013b2llapt6013lllo-264o-247+1 | |
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Contextual Info: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching |
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apt5010b2llapt5010lllo-247 | |
APT5010B2LL
Abstract: APT5010LLL
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apt5010b2llapt5010lllo-264o-247 | |
APT8020B2LL
Abstract: APT8020LLL
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apt8020b2llapt8020lllo-264o-247 | |
an 7073
Abstract: APT8024B2LL APT8024LLL 106F
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apt8024b2llapt8024lllo-264o-247+2 | |
apt10035lllgContextual Info: APT10035B2LL G APT10035LLL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 1000V 28A 0.350Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching |
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apt10035b2llapt10035lllo-247apt10035lllg | |
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Contextual Info: APT8024B2LL APT8024LLL 800V 31A 0.240Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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apt8024b2llapt8024lllo-264o-247 | |
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Contextual Info: APT6017B2LL APT6017LLL 600V 35A 0.170Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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apt6017b2llapt6017lllo-264o-247 | |
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Contextual Info: APT6017B2LL APT6017LLL 600V 35A 0.170Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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apt6017b2llapt6017lllo-264o-247 | |
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Contextual Info: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON |
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apt8020b2llapt8020lllo-264o-247 | |