DIODE B1N Search Results

18650 li-ion cell

Abstract: 18650 li-ion li-ion 18650 battery 18650 battery DIODE B4N BAT54 COL 18650 DIODE B3N MS 18650 DIODE B1N
Contextual Info: Using the bq2058 Improving Immunity to False Overcurrent Shutdown For battery pack protectors using the bq2058, BENCHMARQ recommends a Schottky diode in series with the bq2058’s power rail. This additional component allows correct operation in case of a severe overload, such

melf ZENER diode COLOR BAND

Abstract: MIL-prf-19500/437 437H 1N5521B JANTXV 1N5531B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 fsc do-35 physical dimensions 1N5518D-1
Contextual Info: INCH-POUND MIL-PRF-19500/437H 25 March 2008 SUPERSEDING MIL-PRF-19500/437G 12 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1,

mil-s-19500 qpl jantx1n5518b

Abstract: 1N5521B JANTXV MIL-prf-19500/437 1N5518B-1 1N5518BUR-1 1N5518C-1 1N5518CUR-1 1N5518D-1 1N5518DUR-1 1N5546B-1
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 December 1997 INCH POUND MIL-PRF-19500/437D 15 September 1997 SUPERSEDING MIL-S-19500/437C 20 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR TYPES,

DIODE B3N

Abstract: B2n diode 4.7 B2 zener a3 6 zener B2 Zener HZ22-2 zener diode B2 Zener Diode C3 5 B1 5.6 zener GRZZ0002ZB-A
Contextual Info: HZ-N Series Silicon Planar Zener Diode for Stabilized Power Supply REJ03G1625-0100 Rev.1.00 Mar 25, 2008 Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.

aeg vde 0435

Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
Contextual Info: CONTA-ELECTRONICS ELECTRONICS CONTA-ELECTRONICS CONTA-ELECTRONICS Program Overview 3 4 5 6 10 14 16 22 23 25 27 30 32 34 35 38 39 40 44 46 48 50 52 54 56 58 66 67 68 70 76 90 91 92 94 95 96 98 100 102 104 106 110 112 113 Fuse, Component, Diode and Indicator Modules

M74HCU04

Contextual Info: M54HCU04 M74HCU04 SGS-THOMSON G ì ilo HEX INVERTER SINGLE STAGE HIGH SPEED tpo = 5ns (TYP.) at Vcc = 5V LOW POWER DISSIPATION lCc = 1 /»A (MAX.) at Ta = 25°C OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS BALANCED PROPAGATION DELAYS B1N F1 Ceramic Frit Seal Package

HC126

Abstract: 74HC125 HC-126 HC12S HC125 M74HCXXX 74HC125 equivalent
Contextual Info: Æ 7 SGS-THOMSON M!0(§Kmi(gTrOMO S M54/74HC125 M54/74HC126 QUAD BUS BUFFERS (3-STATE HIGH SPEED tpD = 10 ns (TYP.) at V cc = 5V LOW POWER DISSIPATION lCc = 4 ijA (MAX.) at Ta = 25°C HIGH NOISE IMMUNITY B1N Plastic Package V n IH = V n il = 2 8 % V c c (M IN )

M74HC164

Contextual Info: SGS-THOMSON M 54H C 164 M 74H C 164 IILIlËTISiûHDÊi 8 BIT SIPO SHIFT REGISTER • HIGH SPEED t P0 = 18 ns TYP at VCc = 5V ■ LOW POWER DISSIPATION ICC = 4 at T/\ - 25°C ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ BALANCED PROPAGATION DELAYS 1 B1N

74HC165

Abstract: 74HC165 truth table
Contextual Info: Æ T SGS-THOMSON M54HC165 M74HC165 *7# H0»[i[LI glíl i]0 Í 8-BIT PISO SHIFT REGISTER * HIGH SPEED tpD = 21 ns (TYP. at VCc = 5V • LOW POWER DISSIPATION ICC = 4 mA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V n i H = V n il = 28% Vcc (MIN.) 1 1 B1N

74hc165

Abstract: LS165 M74HC165B1N 10311 54HC 74HC M54HC165 M74HC165 SICK PLS
Contextual Info: SGS-THOMSON M 54HC165 M 74HC165 8-BIT PISO SHIFT REGISTER HIGH SPEED tpD = 21 ns TYP. at VCc = 5V LOW POW ER DISSIPATION lc c = 4 ¿¿A (MAX.) at T a = 25 °C HIGH NOISE IM M U NITY VlMIH = V NIL = 2 8% VCC (MIN.) B1N Plastic Package Ceramic Frit Seal Package

Contextual Info: I G L. SCS-THOMSON M 54H C 165 M 74H C 165 ly 8-BIT PISO SHIFT REGISTER HIGH SPEED tpD = 21 ns TYP. at VCc = 5V LOW POW ER DISSIPATION lCc = 4 (MAX.) at T a = 2 5 °C HIGH NOISE IM M U N ITY V NIH = V NIL = 28% VCC (MIN.) B1N Plastic Package O UTPUT DRIVE CAPABILITY

74HC163

Abstract: IC 74LS160
Contextual Info: r= T SCS-THOMSON ^7#, M54/74HC160/161 M54/74HC162/163 SYNCHRONOUS PRESETTABLE 4-BIT COUNTER • HIGH SPEED fMAX = 50 MHz TYP. at VCc = 5V ■ LOW POWER DISSIPATION |cc = 4 fiA (MAX.) at 25°C ,6 ^ ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS 1 B1N Plastic Package

Contextual Info: Æ 7 SGS-THOMSON M54/74HC692 M54/74HC693 *JÆU HC692 DECADE COUNTER/REGISTER 3-STATE HC693 4 BIT BINARY COUNTER/REGISTER (3-STATE) 1 B1N Plastic Package M1 C1 Plastic Chip Carrier Micro Package ORDERING NUMBERS: M74HCXXX C1 M54HCXXX F1 M74HCXXX M1 M74HCXXX B1N

74HC375

Abstract: 2q75 54HC 74HC M54HC375 M74HC375
Contextual Info: 7 / SGS-THOMSON M 54HC375 M 74HC375 QUAD D TYPE LATCH HIGH SPEED tpD = 13 ns TYP. at V c c = 5V LOW POWER DISSIPATION Ic e = 1 /*A (MAX.) at T a = 25 °C HIGH NOISE IM M UN ITY V NIH = V NIL= 28% V c c (MIN). O UTPU T DRIVE CAPABILITY 10 LSTTL LOADS 1 B1N

74HC163

Abstract: 10YD 74*160 74hc161 application notes lw 293 Thomson capacitors cca
Contextual Info: M54/74HC160/161 M54/74HC162/163 SGS-THOMSON G L 11L[Ì §¥[HMI1 § SYNCHRONOUS PRESETTABLE 4-BIT COUNTER HIGH SPEED fMAX = 50 MHz (TYP. at Vc c = 5V LOW POWER DISSIPATION lcc = 4 ;tA (MAX.) at 25°C OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS 1 B1N P lastic Package

74HC221

Abstract: M74HC221B1N 74ls221 circuits diagram TRANSISTOR QP cmos MONOSTABLE 54HC 74HC M54HC221 M74HC221 74ls221 pin diagram
Contextual Info: M54HC221 M74HC221 SGS -THOMSON 5*[M [id i §ïr^ [ï*S DUAL MONOSTABLE MULTIVIBRATORS HIGH SPEED t PD= 32 ns (TYP) at VCc = 5V LOW POWER DISSIPATION STANDBY STATE lCc = 4 A CTIVE STATE lCc = 200 (M AX.) at TA = 25°C (TYP) at VCC = 5 V HIGH NOISE IMMUNITY

74HC221

Abstract: 1mg transistor
Contextual Info: ÌT T S C S -T H O M S O N SSlDlg lilLieìnas HOei # M54HC221 M74HC221 :- DUAL MONOSTABLE MULTIVIBRATORS • HIGH SPEED tPD= 32 ns TYP) at VCc = 5V ■ LOW POW ER DISSIPATION STANDBY STATE lCC = 4 *iA (MAX.) at TA = 25°C ACTIVE STATE IC C = 200 MA (TYP) at VCC = 5V

Contextual Info: S G S -TH O M S O N 5*mmi ? iMi!lO(@S M54HC221 M74HC221 $ - DUAL MONOSTABLE MULTIVIBRATORS • HIGH SPEED tPD= 32 ns (TYP at VCC = 5V ■ LOW POWER DISSIPATION STANDBY STATE lCc = 4 M (MAX.) at TA = 25°C ACTIVE STATE lCc = 200

74HC423

Contextual Info: M54HC423 M74HC423 / = 7 S G S -T H O M S O N DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORS • HIGH SPEED t PD= 28 ns TYP at VCc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lc c = 4 /iA (MAX.) at TA = 25°C ACTIVE STATE lCc = 200 /iA (TYP) at VCC = 5V ■ HIGH NOISE IMMUNITY

Contextual Info: M54HC4538 M74HC4538 r z z S G S -T H O M S O N ^7# HD ^©[l[Li gir @RiIO©i DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tPD= 27 ns (TYP at VCc = 5V ■ LOW POWER DISSIPATION STANDBY STATE ICC = 4 M (MAX.) at TA = 25°C ACTIVE STATE ICC = 200 (tA (TYP) at VCc = 5V

74hc4538

Contextual Info: SGS-THOMSON *Jfr„ HO [^ i[LI g¥^®iO(gi M54HC4538 M74HC4538 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tPD = 27 ns (TYP at VCc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lCc = 4 ACTIVE STATE lCc = 20° ^ (MAX.) at TA = 25°C (TYP) at VCC = 5V

74hc423

Abstract: 74ls423
Contextual Info: / S T S G S -T H O M S O N llO gMI[LI ?DMO©S M54HC423 M74HC423 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATORS • HIGH SPEED t PD= 28 ns (TYP at VCc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lCc = 4 M (MAX.) at TA = 25°C ACTIVE STATE lCc = 200 pA (TYP) at VCC = 5V

Contextual Info: Æ 7 SCS THOMSON M54HC123 M74HC123 KÆD [S fî iL[E©lF^©^D©i DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tPD= 28 ns (TYP) at VCc = 5V ■ LOW POWER DISSIPATION STANDBY STATE lc c = 4 i*A (MAX.) at TA = 25°C ACTIVE STATE lCc = 200 ftA (TYP) at VCC = 5V

74HC123

Abstract: monostable multivibrator using cmos
Contextual Info: /= 7 M54HC123 M74HC123 S G S -T H O M S O N DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • HIGH SPEED tpD = 28 ns TYP at V c c = 5V ■ LOW POWER DISSIPATION STANDBY STATE lc c = 4 | iA (MAX.) at TA = 25°C ACTIVE STATE lCc = 200 pA (TYP) at VCe = 5V ■ HIGH NOISE IMMUNITY