DIODE B16100G Search Results

DIODE B16100G Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
CEZ6V2		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, ESC	Datasheet
CUZ6V8		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, USC	Datasheet
CUZ12V		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC	Datasheet
MUZ5V6		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM	Datasheet
CEZ6V8		Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, ESC	Datasheet

DIODE B16100G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b16100g Abstract: b16100 MBR16100CT diode b16100g onsemi 035 diode marking code YW DIODE onsemi Z Diode MBR16100CTG MBR1610 Contextual Info: MBR16100CT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • • • http://onsemi.com 16 Amps Total 8.0 Amps Per Diode Leg Guard−Ring for Stress Protection	Original	MBR16100CT MBR16100CT/D b16100g b16100 MBR16100CT diode b16100g onsemi 035 diode marking code YW DIODE onsemi Z Diode MBR16100CTG MBR1610	PDF
Contextual Info: MBR16100CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total 8.0 A Per Diode Leg	Original	MBR16100CT MBR16100CT/D	PDF
B16100G Abstract: diode b16100g dmbr16100ct Contextual Info: MBR16100CT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • • • • • • 16 Amps Total 8.0 Amps Per Diode Leg Guard−Ring for Stress Protection	Original	MBR16100CT MBR16100CT/D B16100G diode b16100g dmbr16100ct	PDF
B16100G Abstract: b16100 diode b16100g MBR16100CT MBR16100CTG B16-100 Contextual Info: MBR16100CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total 8.0 A Per Diode Leg	Original	MBR16100CT MBR16100CT/D B16100G b16100 diode b16100g MBR16100CT MBR16100CTG B16-100	PDF
B16100G Abstract: b16100 diode b16100g MBR16100CT MBR16100CTG Contextual Info: MBR16100CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total 8.0 A Per Diode Leg	Original	MBR16100CT MBR16100CT/D B16100G b16100 diode b16100g MBR16100CT MBR16100CTG	PDF
diode b16100g Abstract: B16100G b16100 Contextual Info: MBR16100CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total 8.0 A Per Diode Leg	Original	MBR16100CT MBR16100CT/D diode b16100g B16100G b16100	PDF