DIODE B TU 25 C Search Results

TRANSISTOR D405

Contextual Info: 2SD2170 2SC4574 Transistors Medium Power Transistor Motor or Relay drive I 2SD 2170 •A b s o lu te maximum ratings (Ta=25"C ) •F e a tu re s 1 2 3 4 5 6 ) ) ) ) ) ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.

2SD188

Contextual Info: 2SB1340 2SD1889 Transistors Power Transistor —120V, —6A 2SB1340 I •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-In resistor between base and emitter. 3 ) Built-In damper diode. 4 ) Complements the 2SD1889. •A b s o lu te maximum ratings (Ta“ 25,C )

2SK2406

Abstract: EN5251 25K24 SR4F sr 4f
Contextual Info: O rdering num ber: EN5251 2SK2406 N-Channel Silicon MOSFET Ultrahigh-Speed Switching, Motor Driver Applications F e a tu re s • Low ON-resistance. • U ltrahigh-speed switching, •High-speed diode. A b so lu te M axim um R a tin g s at Ta=25°C Drain-to-Source Voltage

Contextual Info: FEA TU RES & • 3 0 -1 5 0 MHz ■ 25 nSec Switching Speed ■ 4 dB Insertion Loss MODEL D A 077^ B Schottky Diode 7 Section Attenuator ■ 0.1 dB LSB, 12.7 dB Range ■ TTL Control 7 BIT ■ 38 Pin Surface Mount Package IN/OUT 38 GND •«-► GND

2SK1924

Abstract: EN4313
Contextual Info: Ordering number: E N 4313 2SK1924 N -C hannel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode trr = 140ns . A b so lu te M axim um R a tin g s at Ta = 25°C Drain-to-Source Voltage

Contextual Info: Transistors UML2N Low-frequency Transistor I UML2N •F e a tu r e s 1 The 2SC2412K and a diode are housed independently in a UMT package. •A b s o lu te m aximum ratings Ta = 25'C) Tr Parameter Symbol Limits Unit VcBO VCEO V ebo ic V V V Pc 60 50 6 0.15

Contextual Info: SILICON EPITAXIAL PLANAR TYPE DIODE 1SS268 Unit in mm V H F TU N ER B A N D S W ITC H A PP LIC A T IO N S -t-azs 1 .5 -a is FEATURES : • Small Package. EI • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance B : rs = 0.6ii (Typ.) M A X IM U M RATIN G S (Ta = 25°C)

2SK1922

Abstract: diode gg 2a
Contextual Info: Ordering num ber:EN 4311 _ 2SK1922 No.4311 N -Channel MÖS Silicon FET Very High-Speed Switching Applications F e a tu r e s •Low ON resistance. • Very high-speed switching. • High-speed diode trr = 100ns . A b s o lu te M ax im u m R a tin g s a tT a = 25°C

Contextual Info: 1SS269 SILICON EPITAXIAL PLANAR TYPE DIODE U nit in mm VH F TU N E R B A N D S W ITCH A PP LIC A TIO N S FEATURES : • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.6fi (Typ.) M A X IM U M R ATIN G S (Ta = 25°C)

BF121

Contextual Info: 1SS312 SILICON EPITAXIAL PLANAR TYPE DIODE U nit in mm VHF TU N ER B A N D S W ITCH A PP LIC A T IO N S . • • • Small Package. Small Total Capacitance : C'r = 1.2pF Max. Low Series Resistance : rs = 0.6fl (Typ.) 1. 2 5 ± 0.1 M A X IM U M RATINGS (Ta = 25°C)

DSB15T

Abstract: DSB15TB DSB15TC DSB15TE DSB15TG DSB15TJ DSB15TL
Contextual Info: Ordering number : EN2376 ^ No.2376 1 D S B 15T 1 / IL _ Diffused Junction Type Silicon Diode 1.5A Power Rectifier F e a tu r e s • P lastic molded structure • P eak reverse voltage V r m = —100 to —1000V • A verage rectified cu rren t Io = l-5A A b s o lu te M ax im u m R a tin g s a t Ta ~ 25°C

431i

Contextual Info: 2SK1922 A P A dvanced Perform ance Series 2052B V dss = 600V N Channel Power M O S F E T E 431I F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode (trr= 100ns). A b so lu te M axim um R atin g s a tT a = 25°C D rain to Source Voltage

DSC015

Contextual Info: Ordering number :EN3408 D SCO 15 No.3408 SA\YO Silicon E pitaxial P la n ar Type i High-Voltage Switching Diode F e a tu re s •Ideally suited for use in hybrid ICs because of small-sized package. • High breakdown voltage. A b so lu te M axim um R a tin g s a t Ta = 25°C

DSB015

Abstract: BFl15
Contextual Info: Ordering number : EN1186D D S B4 1 5 N 0. I I 86D Silicon E pitaxial P lan ar Type High-Speed Switching Diode F e a tu re s • Ideally suited for use in hybrid ICs because of small-sized package •F ast sw itching speed A b so lu te M axim um R a tin g s a t Ta = 25°C

Contextual Info: 2SK1925 2056 AP A d va n ce d P e rfo rm a n c e Series V dss = 6 0 0 V IM Channel Power MOSFET 43 U F e a tu r e s • Low ON resistance. • Very high-speed sw itching. •H igh-speed diode (trr= 150ns). b s o lu te M axim u m R a tin g s a tT a = 25°C

Contextual Info: 2SK1925 AP A d v a n c e d P e rfo rm a n c e Series V dss = 6 0 0 V N Channel Power M OSFET 'I >4314 F e a tu re s • Low ON resistance. • Very high-speed switching. • High-speed diode ( tr r = 150ns). A b so lu te M axim um R a tin g s a tT a = 25°C

Contextual Info: STH61008 1300 nm DFB Laser in Coaxial Package w ith SM-Pigtail, High Power, w ith optical Isolator for 2.5 Gbit/s Application Target specification D im ension s in m m max. 50.5 Absolute Maximum Ratings DESCRIPTION O u tp u t p o w e r ratings refer to the SM fib e r o u tp u t. The

Contextual Info: Infineon technologies SEH61008 1300nm DFB Laser in Coaxial Package w ith SM-Pigtail, High Power, w ith optical Isolator for 2.5 Gbit/s Application and adaption board to Butterfly footprint Target specification D im ension s in m m Absolute Maximum Ratings

Contextual Info: Order this document by MC33153/D ^ MOTOROLA -M C33153 Advance Information Single IGBT G ate Driver The MC33153 is specifcally designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor

1T365

Contextual Info: 1T365 sony» Silicon Variable Capacitance Diode D e s c rip tio n The 1 T 3 6 5 is a variable capacitance diode contained in super minature package, and used for electronic-tuning of BS tuner. F e a tu re s • Super minature package • Small capacitance

Contextual Info: S TU/D303S S amHop Microelectronics C orp. N ov, 16, 2007 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S -30V R DS ON ID S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

D1855

Contextual Info: S T U/D1855P LS S amHop Microelectronics C orp. Aug,18 2005 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS ON ID ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable. 73 @ V G S = -10V

ITC117

Contextual Info: INTEGRATED TELECOM CIRCUITS ITC117P/ITC135P/ITC137P The Integrated Telecom Circuit series combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocoupler and zener diodes in one package for all your telecom applications. FEATURES

Nippon Pulse Motor pj series

Abstract: hcpl4053 MC33153 AN MC33153 mc33153 IGBT DRIVER pj 0189 diode
Contextual Info: Order this document by MC33153/D MOTOROLA Advance Information Sin gle IG B T G ate Driver The MC33153 is specifcally designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving