DIODE B 14 Search Results

MOZ 23

Abstract: DD1000S33HE3 48 H diode
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

DD1000S33

Abstract: FZ1000R33HE3
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

Contextual Info: NJM13700M IL00 * DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER —TOP VIEW— AMP BIAS IN A 1 16 AMP BIAS IN B DIODE BIAS A 2 15 DIODE BIAS B + IN A 3 14 (+) IN B (–) IN A 4 13 (–) IN B + – + – OUT A 5 12 OUT B 6 V– (–15 V) V+ 11 (+15 V)

Contextual Info: Silicon Diode Array B G X 50 A Bridge configuration High-speed switch diode chip ~3 4 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package B G X 50 A U1 Q62702-G35 Q62702-G38 SOT 143 Maximum ratings per diode Parameter

1N23 diode

Abstract: 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode
Contextual Info: MICROWAVE MIXER DIODE I48CAY/B Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode for use at X band. The 148CAY/B is interchangeable with the 1N23 s e r ie s . QUICK REFERENCE DATA Typical noise figure at X band 6.5 Frequency range

Contextual Info: ERD24-06-ERD74-06I12A •600V • : Outline Drawings FAST RECOVERY DIODE : Features • Glass passivated chip • High reverse voltage capability. • Stud mounted : Applications • Sw itching power supplies • Free-wheel diode • Sn u b b e r diode •

Contextual Info: N AUER PHILIPS/DISCRETE b lE b b S B ^ l OOSblSD fl71 BA314 D IAPX A LOW VOLTAGE STABISTOR W Z Silicon planar epitaxial diode in DO-35 envelope. This diode is intended for low voltage stabilizing e.g. bias stabilizer in class-B output stages, clipping, clamping and meter protection.

diode marking v6

Abstract: KDV300V VR1060 C25V
Contextual Info: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=14.5 Min. Low Series Resistance : rs=1.1 (Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25

diode 1n4

Contextual Info: SEMICONDUCTOR 1N4148 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Fast switching diode B C DIM MILLIMETERS A MAX 3.9 B MIN 27.5 MAX 1.9 C MAX 0.52 D A B MAXIMUM RATING Ta=25 CHARACTERISTIC D SYMBOL RATING

diode marking v6

Contextual Info: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=14.5 Min. ・Low Series Resistance : rs=1.1Ω(Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25℃)

Contextual Info: BB619 _ / V VHF VARIABLE CAPACITANCE DIODE The B B 61 9 is a V H F variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 M H z in all-band tuners. The diode is encapsulated in a hermetically sealed S O D 1 2 3 plastic envelope suitable for surface mounting.

MRR 50-10

Abstract: mrr 50-08 MRR50-12 DIODE 73 MRR35 ABB thyristor modules mrr50 thyristor modules mrr ASEA thyristor GTO thyristor
Contextual Info: A S E A B R O W N /A B B ñ3 S EM IC O N D l Q04Ö3GÖ 0QQD503 ñ T - Z 5 -O Í Modules with reverse conducting Module mit rückwärtsleitenden Thyristoren Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

diode LZ. 02

Abstract: diode LZ. 58 BZX88 BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67
Contextual Info: MICROE SILICON PLANAR HIGH-SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature T yp e Description M ax. V RWM Volts BA W 63 BAW 63A BA W 63B B A W 64 B A W 65 BA W 66 BA W 67 BA W 68 Single diode Single diode Single diode C o m m on cathode diode pair

GP 836 DIODE

Abstract: 3fv 60 HP 3379 KDZ9.1FV ZENER QF KDZ10FV KDZ20FV KDZ16VV KDZ3.6FV kdz16fv
Contextual Info: SEMICONDUCTOR KDZ3.6FV~KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C 6%. D Nominal Voltage Tolerance About B DIM A B C

Contextual Info: DIODE MODULE DD60HB/KD60HB UL;E76102 M Power Diode Module D D 60H B series are designed for various rectifier circuits. D D 60H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D1560CT Green Products Technical Data Data Sheet N1286, Rev. - SDUR/B/D1560CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D15120CT Green Products Technical Data Data Sheet N1331, Rev. - SDUR/B/D15120CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

d1530c

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D1530CT Green Products Technical Data Data Sheet N1266, Rev. - SDUR/B/D1530CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D10120CT Green Products Technical Data Data Sheet N1328, Rev. - SDUR/B/D10120CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D15100CT Green Products Technical Data Data Sheet N1342, Rev. - SDUR/B/D15100CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

4FV diode

Abstract: 3fv 60 2FV 60 diode diode 3FV 60 mark 2fv diode kdz2.0fv KDZ9.1FV diode zener 3FV 36FV 4FV 60 on
Contextual Info: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C D Sharp Breakdown Characteristic. B DIM A B C D E F A

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D1520CT Green Products Technical Data Data Sheet N1256, Rev. - SDUR/B/D1520CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: SANGDEST MICROELECTRONICS SDUR/B/D1540CT Green Products Technical Data Data Sheet N1276, Rev. - SDUR/B/D1540CT ULTRAFAST PLASTIC RECTIFIER Applications: • • • • • • • • Antiparallel diode for high frequency switching devices Anti saturation diode

Contextual Info: 1000V 75A APT75DQ100B APT75DQ100S APT75DQ100BG* APT75DQ100SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE B PRODUCT APPLICATIONS Anti-Parallel Diode -Switchmode Power Supply -Inverters Free Wheeling Diode