DIODE ASSEMBLY Search Results

DS16BN

Abstract: DS16B LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 350 v 30 a diode rectifier DS-16B high voltage rectifier diode DIODE y 12 mitsubishi bridge rectifier
Contextual Info: MITSUBISHI RECTIFIER DIODE STACK ASSEMBLY DS16BN MEDIUM POWER RECTIFIER USE D E S C R IP T IO N O U T L IN E D R A W IN G Dim ension : mm Mitsubishi type D S1 6 B N series are Medium power rectifier diode stack assemblies using high reliability rectifier diode. These stack assemblies are

ZENER DIODE marking l2

Abstract: zener voltage for diode 1N5231B smd diode marking code g SMD ZENER DIODE MARKING CODE G SMD zener marking code 102 SILICON PLANAR zener diode DO-35 1N5222B SMD diode Zener diode smd marking code 24 1N5239B SMD 1N5227B
Contextual Info: Comchip Glass Silicon Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Planar Die Construction -500mW Power Dissipation -Ideally Suited for Automated Assembly Processes 1.02 26.00 Min.

MA4E1340

Abstract: medium barrier schottky MA4E1340A-1146T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143 47 SOT143
Contextual Info: MA4E1340 Series Silicon Medium Barrier Schottky Diode Features V 4.00 Package Outlines RF & Microwave Medium Barrier Silicon 70 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Packages

Contextual Info: DSA300I45NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour

LMH6525

Abstract: High-Frequency Modulation Laser cd dvd
Contextual Info: LMH6525,LMH6526 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Literature Number: SNOSAF1A LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output General Description Features The LMH 6525/6526 is a laser diode driver for use in

DH60-14A

Contextual Info: DH60-16A V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1600 V 60 A 230 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

Contextual Info: DSS6-0025BS preliminary V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 6A 0.30 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses

420 Diode

Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: WEITRON BZX84C2V4W Series Surface Mount Zener Diode ZENER DIODE Pb 200m WATTS Features: * Planar Die Construction * 200mW Power Dissipation on FR-4 PCB * General purpose, Medium Current * Ideally Suited for Automated Assembly 3 1 2 1 3 SOT-323 SC-70 SOT-323 Outline Demensions

phoenix contact QUINT 40

Abstract: 1197X redundancy module quint-diode QUINT-DIODE/40
Contextual Info: Redundancy Module QUINT-DIODE/40 QUINT DIODE provides: • 100% decoupling of power supplies connected in parallel • Can be installed in potentially explosive areas • Load currents up to 60 A supported • Easy assembly by snapping onto the DIN rail 1. Short Description

transistor irf 645

Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values

C-150

Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

XTR1N0400

Contextual Info: XTRM Series XTR1N0400 IE W HIGH-TEMPERATURE, 40V DIODE FAMILY DESCRIPTION ▲ Reverse voltage VR > 55V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Forward current @ 230°C, VF=1.2V: o XTR1N0415: IF=320mA per diode. o XTR1N0450: IF=1150mA per diode.

NX5304

Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor

Contextual Info: DSB 10 I 45 PM advanced V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 10 A 0.52 V Part number 3 1 Backside: isolated Applications: Features / Advantages: Very low Vf Extremely low switching losses

transistor D 4515

Abstract: D 4515 727 diode
Contextual Info: CHIP DIODES Bourns Rep District Sales Managers Bourns Rep Distributor Managers Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team April, 2009 Bourns Adds Backend Package Assembly Location for Diode Products Bourns is adding an additional backend package assembly location for the assembly of our diode

marking tp sot23-6

Abstract: MARKING 53 SOT23-6 SOT23-6 MARKING DIODE V38 marking DIODE sot23-6 js marking SOT23-6 Marking TM SP3050 Marking c9 SOT23-6 A2 marking diode esd diode sot23-6
Contextual Info: SPA TVS Diode Array Products Low Capacitance Diode Array for ESD and Surge Protection SP3050 SERIES RoHS Pb GREEN The SP3050 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can

laser driver TTL circuits

Abstract: 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07
Contextual Info: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel _Features ♦ Rise Times Less than 250ps ♦ Differential PECL Inputs

MMBD1005LT1

Abstract: MMBD2005T1 MMBD3005T1 SMD310
Contextual Info: MOTOROLA Order this document by MMBD1005LT1/D SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features:

transistor MJ 122

Abstract: MGY40N60D
Contextual Info: MOTOROLA Order this document by MGY40N60D/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY40N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–264

Contextual Info: DSA30C45PC advanced Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number Backside: cathode 1 Features / Advantages: Very low Vf Extremely low switching losses low Irm values Improved thermal behaviour

1T363A

Abstract: 1T362A
Contextual Info: 1T363A Silicon Variable Capacitance Diode For the availability of this product, please contact the sales office. Description The 1T363A is a variable capacitance diode designed for electronic tuning of TV tuners, and the super-miniature package allows the tuner