DIODE AR S1 61 Search Results

Contextual Info: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

Contextual Info: AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant • Common Drain

MCR-FL-C-UI-UI-DCI-24

Abstract: "Isolation Amplifier" 4-20ma CISPR22 Isolation amplifier
Contextual Info: Configurable 3-Way Isolation Amplifier With Long-Range Supply MCR-FL-C-UI-UI-DCI-24/230 • 3-way isolation • Safe isolation in accordance with EN 61 010 • Configurable inputs and outputs • Adjustable cut-off frequency <10 Hz / 10 kHz, approximately

"Isolation Amplifier"

Abstract: MCR-FL-C-UI-UI-DCI-24 FL 3333 MCR-C-UI-UI CISPR22 AC DC power supply
Contextual Info: Configurable 3-Way Isolation Amplifier With Long-Range Supply MCR-FL-C-UI-UI-DCI-24/230 • 3-way isolation • Safe isolation in accordance with EN 61 010 • Configurable inputs and outputs • Adjustable cut-off frequency <10 Hz / 10 kHz, approximately

Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO6602

Abstract: uis test
Contextual Info: AO6602 30V Complementary MOSFET General Description Product Summary The AO6602 uses advanced trench technology to provide excellent RDS ON and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

AO4618

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

Contextual Info: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.

ao4832

Contextual Info: AO4832 30V Dual N-Channel MOSFET General Description Product Summary The AO4832 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. ID (at VGS=10V)

AO4884

Contextual Info: AO4884 40V Dual N-Channel MOSFET General Description Product Summary The AO4884 uses advanced trench technology to provide excellent RDS ON with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.

AO4884L

Contextual Info: AO4884L 40V Dual N-Channel MOSFET General Description Product Summary The AO4884L uses advanced trench technology to provide excellent RDS ON with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.

Qg (nC)

Abstract: 70°C AO6810 diode AR S1 77 diode AR S1 70
Contextual Info: AO6810 30V Dual N-Channel MOSFET General Description Product Summary The AO6810 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V

M8402

Abstract: 041 DIODE
Contextual Info: S T M8402 S amHop Microelectronics C orp. P reliminary May.26 2004 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 6.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V

M8306

Abstract: HR ONS diode ar s1
Contextual Info: S T M8306 Green Product S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) Max V DS S

mar-06

Abstract: STM8306 m8306 diode AR s1 52
Contextual Info: S T M8306 S amHop Microelectronics C orp. Mar.06, 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A

AON6884L

Abstract: AON6884
Contextual Info: AON6884L 40V Dual N-Channel MOSFET General Description Product Summary The AON6884L uses advanced trench technology to provide excellent RDS ON with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.

Contextual Info: AON6884 40V Dual N-Channel MOSFET General Description Product Summary The AON6884 uses advanced trench technology to provide excellent RDS ON with low gate charge. This is an all purpose device that is suitable for use in a wide range of power conversion applications.

Contextual Info: ZXM HC6A07T8 COM PLEM ENTARY 60V ENHANCEM ENT M ODE M OSFET H-BRIDGE SUM M ARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V (BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench M OSFETs from Zetex utilizes a unique

AOD603A

Contextual Info: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

SK 10 BAT 065

Abstract: 0/SK 10 BAT 065 20/SK 10 BAT 065
Contextual Info: A dvanced P o w er Te c h n o lo g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025a 75A 0.030Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd *DM VGS V GSM PD t j ,t stg All Ratings: Tc = 25°C unless otherwise specified.