DIODE AR S1 56 Search Results

Le57D11

Abstract: Legerity SLAC L11A050AA jr223 RTX22 AM79Q021 diode AR s1 55 CD11 CD12 CD22
Contextual Info: Le57D11 Dual SLIC Device Evaluation Board User’s Guide Rev. A January 30, 2002 Document Number: 080748 The contents of this document are provided in connection with Legerity, Inc. products. Legerity makes no representations or warranties with respect to the accuracy or completeness of the

SKM652

Abstract: SKM692F SKM682F
Contextual Info: SEMIKRON INC ]> m 3bE ai3bLj71 0002531 T « S E K Ô S E M IK R O N Absolute Maximum Ratings Symbol V ds V dgr Id Idm V gs Pd Tj.Tstg Visol humidity climate Values Units 1000 1000 9 36 ±20 225 - 5 5 . . + 150 2500 Class F 55/150/56 V V Conditions 1 R gs = 20 k fì

AO6604

Contextual Info: AO6604 20V Complementary MOSFET General Description Product Summary The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

AO4612

Abstract: Complementary diode AR s1 56
Contextual Info: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Contextual Info: AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

3X2A

Contextual Info: AON4803 20V P-Channel MOSFET General Description Product Summary The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: AO4892 100V Dual N-Channel MOSFET General Description Product Summary The AO4892 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an

AON4803

Contextual Info: AON4803 20V Dual P-Channel MOSFET General Description Product Summary The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: AO4892 100V Dual N-Channel MOSFET General Description Product Summary The AO4892 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an

STK14N05

Abstract: STK14N06 diode AR s1 56 P032B
Contextual Info: STK14N05 STK14N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STK14N05 50 V < 0.12 Ω 14 A STK14N06 60 V < 0.12 Ω 14 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STM8405

Abstract: diode AR s1 56 diode AR S1 86 diode AR s1 8N
Contextual Info: S T M8405 S amHop Microelectronics C orp. Nov.23, 2004 ver 1.4 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A

ISS133

Abstract: M8305
Contextual Info: S T M8305 S amHop Microelectronics C orp. May,13 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID

diode AR S1 86

Abstract: EQUIVALENT STM8405 STM8405 M8405 diode AR s1 56
Contextual Info: S T M8405 S amHop Microelectronics C orp. MAY .04,2006 ver 1.5 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A

diode AR s1 39

Contextual Info: AON6850 100V Dual N-Channel MOSFET SDMOS TM General Description Product Summary The AON6850 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal

Contextual Info: MS 120 MS 1100 THR U C HIP S C HOT T K Y B AR R IE R DIODE S MINI/SOD-123 0.154 3.9 0.138(3.5) Pla stic p a c ka ge ha s Und e rwrite rs La b o ra to ry Fla m m a b ility C la ssific a tio n 94 V-0 Utilizing Fla m e • Re ta rd a nt Ep o xy Mo ld ing C o m p o und

MINI SMA

Contextual Info: MS 120 THR U MS 1100 C HIP S C HOT T K Y B AR R IE R DIODE S MINI/SOD-123 0.154 3.9 0.138(3.5) Pla stic p a c ka ge ha s Und e rwrite rs La b o ra to ry Fla m m a b ility C la ssific a tio n 94 V-0 Utilizing Fla m e • Re ta rd a nt Ep o xy Mo ld ing C o m p o und

Contextual Info: AON6971 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Q1

AON6970

Contextual Info: AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Q1

SK 10 BAT 065

Abstract: 0/SK 10 BAT 065 20/SK 10 BAT 065
Contextual Info: A dvanced P o w er Te c h n o lo g y O D APT10M25BNR 100V APT10M30BNR 100V O s POWER MOS IV® 75A 0.025a 75A 0.030Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd *DM VGS V GSM PD t j ,t stg All Ratings: Tc = 25°C unless otherwise specified.

Voltage Doubler with 555 circuit

Abstract: LNK562-564 LNK564 LNK562 LNK562P LNK563P LNK564P M52240 m52240539141
Contextual Info: LNK562-564 LinkSwitch-LP Energy Efficient Off-Line Switcher IC for Linear Transformer Replacement Product Highlights Lowest System Cost and Advanced Safety Features • Lowest component count switcher • Very tight parameter tolerances using proprietary IC

LNK564

Abstract: LNK562-564 DIP-8B EE16 core transformer HIGH FREQUENCY Transformer ee19 LNK563 LNK562 LNK562P LNK563P LNK564P
Contextual Info: LNK562-564 LinkSwitch-LP Energy Efficient Off-Line Switcher IC for Linear Transformer Replacement Product Highlights Lowest System Cost and Advanced Safety Features • Lowest component count switcher • Very tight parameter tolerances using proprietary IC

LNK564

Abstract: HIGH FREQUENCY Transformer ee19 LNK562-564 Transformer ee19 SMD 564 regulator 8 pin SMD ic 4570 datasheet DIP-8B EE16 core transformer W 5% ZENER 1N4003 LNK562
Contextual Info: LNK562-564 LinkSwitch-LP Energy Efficient Off-Line Switcher IC for Linear Transformer Replacement Product Highlights Lowest System Cost and Advanced Safety Features • Lowest component count switcher • Very tight parameter tolerances using proprietary IC

4040 cmos

Abstract: transistor 2N 3055 IC 74ls244 ic 2114 diode S3L 7d ls y201 AY-3-1015 ic 74ls245 IC 74LS02 ic 74LS08
Contextual Info: Applied Microsystems Corporation 5020 148th Avenue N.E. P.O. Box 568 Redmond, WA 98052 206 882-2000 (800)426-3925 P R E L I M I N A R Y S E R V I C E M A N U A L EM-180/180B Diagnostic Emulator * Document Number 920-10648 ♦Diagnostic Emulator is a trademark of Applied Microssyterns Corp.

564 smd 6 pin

Contextual Info: LNK562-564 LinkSwitch-LP Energy Efficient Off-Line Switcher IC for Linear Transformer Replacement Product Highlights Lowest System Cost and Advanced Safety Features • Lowest component count switcher • Very tight parameter tolerances using proprietary IC