DIODE A7 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes DAN217U SOT-323 SWITCHING DIODE FEATURES z Small surface mounting type. z Two diode elements are connected in series MARKING: A7 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃

A7 DIODE

Abstract: BAV99 application DIODE A7 Diode bav99 MARKING A7 marking code a7 SOT-23 bav99 code diode SOT 23 A7 diode BAV99
Contextual Info: BAV99 HIGH-SPEED DOUBLE DIODE fast switching in thick and thin-film circuits diode 3 1 Absolute Maximum Ratings Ta = 25 OC Parameter 2 Marking Code: A7 SOT-23 Plastic Package Symbol Value Unit VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current (Double Diode Loaded)

OF IGBT BSM 200 GAL 120 DN2 1200V 290A

Abstract: HB 200GAL igbt module bsm 200 AC DC chopper AC - DC chopper
Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70

diode chopper

Abstract: BSM300GA120DN2 C67070-A2301-A70
Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70

200GAR

Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
Contextual Info: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

diode Lz 66

Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

Contextual Info: •URGE BAV99 vvvvw.surgecomponents.com Silicon Epitaxial Planar Switching Diode Fast switching in thick and thin-film circuits diode □— cr Marking Code: A7 SOT-23 Plastic Package Absolute Maximum Ratings T* - 25 °C Parameter Symbol Value Unit V rrm

DIODE A7

Abstract: A7 diode marking A7 diode free diode marking a7 a7 surface mount diode A7 marking diode
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK4448CLLD03 - WBFBP-03D SWITCHING DIODE TOP 1.0x1.0×0.5 unit: mm DESCRIPTION Epitaxial planar Silicon diode + - 1. ANODE 2. ANODE 3. CATHODE FEATURES Fast Switching Speed

KA 2133 A

Abstract: diode rectifier 900A A782 A782EM A782EN A782FB A782FD A782FM A782FN A782FP
Contextual Info: A782 53mm RECTIFIER DIODE 7000V / 900A The A782 rectifier diode features a nominal 53mm silicon junction diameter design, manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

LBAV99LT1

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING LBAV99LT1 = A7 SOT–23 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage

BAV99

Contextual Info: BAV99 Silicon Epitaxial Planar Switching Diode Fast switching in thick and thin-film circuits diode Marking Code: A7 SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER SYMBOL Repetitive Peak Reverse Voltage VALUE UNIT VRRM 85 V Continuous Reverse Voltage

A796

Contextual Info: A796 53mm Fast Recovery DIODE 1500 - 2500V The A796 fast recovery diode is designed as a parallel mate for GTO’s used in voltage fed inverter circuits normally requiring the bypass function. Its relatively low recovery current and charge in combination with

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

DIODE G7

Abstract: BAV99LT1 G7 diode
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current

Contextual Info: BAV99 200 mA 70 V High Conductance Ultra-Fast Switching Diode Features Description • • • • The BAV99 is a 350 mW high-speed switching diode array with series-pair diode configuration. It achieves high-current conductivity, up to 200 mA, in a very small

BAV99T

Abstract: SC75
Contextual Info: BAV99T Silicon Switching Diode 3 • For high-speed switching applications • Connected in series 2 C1/A2 3 1 1 2 A1 C2 VPS05996 EHA07181 Type Marking BAV99T A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SC75 Maximum Ratings Parameter Symbol Diode reverse voltage

bav99w A7S

Abstract: BAV99W VSO05561
Contextual Info: BAV99W Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 C1/A2 3 1 1 2 A1 C2 VSO05561 EHA07181 Type Marking BAV99W A7s Pin Configuration 1 = A1 2 = C2 Package 3 = C1/A2 SOT323 Maximum Ratings Parameter Symbol Diode reverse voltage

ESC021M-15

Abstract: T151 T760 T930 t1511 A5-51
Contextual Info: E S C 021M -15 sa i— K Outline Drawings FAST RECOVERY DIODE Features Dam per diode for high definition TV and high resolution display. Dam per and m odulater diode are jointed in a body. Insulated package by fully molding. m m m & m Connection Diagram

A940

Abstract: a940 Transistor transistor a940 DIODE BAT Q62702-A940 BAT18 A938 A942 Q62702-A787 Q62702-A938
Contextual Info: BAT 18 Silicon RF Switching Diode BAT 18 … ● Low-loss VHF/UHF switch above 10 MHz ● Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940

diode OA-79

Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
Contextual Info: 0A79 2-O A79 G E R M A N IU M DIODE Germanium diode in all g la ss construction for use in a .m . detector circu its. Type 2-OA79 consist* of 2 diodes OA79 selected lo r operation in a ratio detector circuit. MECHANICAL DATA Dimensions in mm not tlnntd The white band indicates

Contextual Info: SKKD 26 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMIPACK 1 Rectifier Diode Modules SKKD 26 12-3 1223

Contextual Info: WEITRON WAN202U / WAP202U WAN217U Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: * Low Current Leakage * Low Forward Voltage * Ultra High Speed Switching * Surgace Mount Package Ideally Suited for Automatic Insertion Mechanical Data:

A4 SOT323

Abstract: WAN217U WAN202U WAP202U
Contextual Info: WEITRON WAN202U / WAP202U WAN217U Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: * Low Current Leakage * Low Forward Voltage * Ultra High Speed Switching * Surgace Mount Package Ideally Suited for Automatic Insertion 3 Mechanical Data: