DIODE A60 Search Results

DIODE A46

Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Contextual Info: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s

bap64-03

Abstract: lm 9805 DIODE ED 99
Contextual Info: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-03 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-03 PINNING FEATURES • High voltage, curre n t controlled.

BAP64-05

Contextual Info: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-05 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-05 PINNING FEATURES • High voltage, curre n t controlled.

BAP64-02

Abstract: v 817 y
Contextual Info: DISCRETE SEMICONDUCTORS Æ m SIHIEET BAP64-02 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-02 PINNING FEATURES • High voltage, curre n t controlled.

IRFP250

Abstract: HFA16TA60CS 94059
Contextual Info: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

HFA16TA60C

Contextual Info: PD-95739 HFA16TA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

P035H

Abstract: IRFP250 HFA50PA60C
Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

P035H

Abstract: HFA50PA60C IRFP250
Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

HFA16TA60C

Abstract: IRFP250 HFA16TA60CPBF
Contextual Info: PD-95739 HFA16TA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

HFA16TA60C

Abstract: IRFP250
Contextual Info: PD-95739 HFA16TA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: DIODE MODULE f.r.d FRG25CA120 UL;E76102(M) FRG25CA1 2 0 is a high speed isolated diode module designed for high power switching application. F R G 2 5 C A 1 2 0 is suitable for high frequency application requiring low loss and high speed control. • •

diode 244

Abstract: diode 243 diode ba 244 BA244S BA244 BA243 ba 243 rf DIODE BA243 Q62702-A607 ba capacitance diode
Contextual Info: SIEM EN S BA 243 S BA 244 S Silicon RF Switching Diodes • For VHF band switching in TV tuners • Low forward resistance and low diode capacitance • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 243 S yellow Q62702-A607 DO-35 DHD

C2E1

Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

C2E1

Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

Contextual Info: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

Contextual Info: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC

A6010

Abstract: A6010 CMOS sensor ADNS-6010 native IC A6010 AV02-1410EN Avago cross
Contextual Info: ADNS-6010 Laser Mouse Sensor Data Sheet Description Features The Avago Technologies ADNS-6010 sensor along with the ADNS-6120 or ADNS-6130-001 lens, ADNS-6230001 clip and ADNV-6340 laser diode form a complete and compact laser mouse tracking system. It is the

zener diode A36

Abstract: zener diode A29 ZENER A29 a37 zener diode ZENER A26 a36 zener ZENER A34 CAZ23C24 a59 zener diode ZENER A26
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CAZ23C2V7 – CAZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

HFA30TA60CS

Abstract: IRFP250 hfa30ta60cspbf
Contextual Info: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC