DIODE A60 Search Results

IRFP250

Abstract: HFA16TA60CS 94059
Contextual Info: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

HFA16TA60C

Contextual Info: PD-95739 HFA16TA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

P035H

Abstract: IRFP250 HFA50PA60C
Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD -96038 HEXFRED HFA16TA60CSPbF TM Ultrafast, Soft Recovery Diode Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

P035H

Abstract: HFA50PA60C IRFP250
Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

HFA16TA60C

Abstract: IRFP250 HFA16TA60CPBF
Contextual Info: PD-95739 HFA16TA60CPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: DIODE MODULE f.r.d FRG25CA120 UL;E76102(M) FRG25CA1 2 0 is a high speed isolated diode module designed for high power switching application. F R G 2 5 C A 1 2 0 is suitable for high frequency application requiring low loss and high speed control. • •

C2E1

Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

C2E1

Abstract: transistor QCA75A60 QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 94MAX
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

Contextual Info: International l R Rectifier preliminary SINGLE SWITCH IGBT DOUBLE INT-A-PAK PD-50071A G A600G D25S Standard Speed IGBT Features • S tan dard speed, op tim ized fo r ba tte ry pow ered application • V e ry low con du ction losses • H E X F R E D ™ an tipa ralle l diode s w ith ultra-soft

HFA30TA60CS

Abstract: IRFP250 hfa30ta60cspbf
Contextual Info: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC

Contextual Info: PD-96032 HFA30TA60CSPbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • VR = 600V VF typ. * = 1.2V 2 Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free IF(AV) = 15A Qrr (typ.)= 80nC

0x855

Abstract: VCSEL lens array
Contextual Info: ADNS-6000 Laser Mouse Sensor Data Sheet Description Applications The Avago Technologies ADNS-6000 sensor along with the ADNS-6120 or ADNS-6130-001 lens, ADNS-6230-001 clip and ADNV-6340 laser diode form a complete and compact laser mouse tracking system. It is world’s first

A60030P535

Abstract: A60036P535
Contextual Info: Control Diodes Square Ceramic MELFs Alpha’s newest addition to the PIN diode family, co n s is ts of a square cera m ic body w hich incorporates various PIN chips between two conducting end plugs locked together by the ceramic body. The ends of the ceramic body are

MARKING rkm

Contextual Info: SC016 i .OA — 'i'X —Y • Outline Drawings GENERAL USE RECTIFIER DIODE ■ Features • m m 'g & rf- sim Surface m o unt device • K ftlK tt I S tjv • Marking High reliability ’ Applications • 1 B B General purpose rectifier applications • y L—

SC016-2

Abstract: SC016-4 SC016-6
Contextual Info: SC016 i .OA — 'i'X —Y • Outline Drawings GENERAL USE RECTIFIER DIODE ■ Features • m m 'g & r f - s im Surface m o unt device • K ftlK tt I S tjv • Marking High reliability ’ Applications 1 • B B General purpose rectifier applications • y L—

Ry110

Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #

Building Management System

Abstract: relay 12vdc with diode BMS SYSTEM diode D3 electronic transformer LED 12vDC 16VAC bms battery sounder S1600 A600M
Contextual Info: Mains/12vdc Powered AIDALARM A600M This is designed for use with an S1600 pull cord/led indicator or an (S1605P or S) wall mounted call button/led indicator. It can be used to create a comprehensive system with the addition of an (S1608S or P) remote reset button, remote indicator / mute unit with separate LED and sounder

Contextual Info: STW 9 NA60 S T H 9 N A 6 0 FI S G S -T H O M S O N [M O ig œ ilL ie ra *® N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STW 9N A60 STH 9N A60FI • . . . . . . V dss RDS on Id 600 V 600 V < 0 .8 Q. < 0 .8 Q. 9.5 A 6.4 A TYPICAL RüS(on) = 0.69 Cl

Contextual Info: Eu SGS-THOMSON STW8NA60 STH8NA60FI ilLiOTMOlêS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STW 8N A60 S TH 8N A60FI • . ■ > . . . dss 600 V 600 V R D S o n Id < 1 n < 1 fl 8 A 5 A TYPICAL RDS(on) = 0.92 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: ¿57 TYP E S GS-THOMSON ¡[LiCTIiMOOS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STH 12N A60 STH 12N A60FI STW 12N A60 STH12NA60/FI STW12NA60 dss 600 V 600 V 600 V R DS on Id < 0 .6 Q. < 0 .6 Q. < 0 .6 Q. 12 A 7 A 12 A . TYPICAL R DS(on) = 0.44 Q.

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STE40NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E S TE40N A60 . . . . . . . . . V dss R dS(oii) Id 600 V < 0.135 Q. 40 A TYPICAL RDs(on) =0.12 £2 HIGH CURRENT POWER MODULE