DIODE A34 Search Results

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage

DIN 16901

Abstract: DIN ISO 2768-M DIN 16901 130 DIN 16901 140 FS450R12KE3 DIN 16901 150 5B4A
Contextual Info: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

fs450r12ke3

Abstract: DIN 16901 130 P4E7
Contextual Info: Technische Information / technical information FS450R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF1400R12IP4 PrimePACK 3 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

LTC4098-3.6

Contextual Info: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC

Contextual Info: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2 =C 3 n.c. Package 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol

Contextual Info: BAW 101 Silicon Switching Diode Array • Electrically isolated high-voltage medium-speed diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BAW 101 JP Q62702-A3444 Q62702-A71* SOT 143 Maximum ratings Parameter

Contextual Info: SIEMENS BAW 78M Silicon Switching Diode Preliminary data • Switching applications • High breakdown voltage Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 1=A 2=C 3 n.c. Package 4 n.c. 5=C SCT-595 Maximum Ratings Parameter Symbol

Q62702-A3466

Abstract: marking CODE JTS
Contextual Info: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array • For high-speed switching applications • Electrical insulated diodes Ordering Code Pin Configuration BAS 28W JTs Q62702-A3466 1 =C1 CM O Marking II CM Type Package 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter

Q62702-A3471

Abstract: SCT-595
Contextual Info: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications • High breakdown voltage 5 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings

Contextual Info: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2 1 1 2 1404A 2NC 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Contextual Info: 32E D • 023^350 OQlbSbl ö « S I P Silicon Switching Diode Array B A W 101 S I E M E N S / SPCL-, S E M I C O N D S _ • Electrically Isolated high-voltage medlum-speed diodes Type Marking BAW 101 JP Ordering code for versions In bulk Q62702-A3444

1403A

Abstract: sot23-3 wa 1405A MMBD1401A a32 sot23-3 DIODE A34 wa sot23-3 R017 MMBD1403A MMBD1404A
Contextual Info: CONNECTION DIAGRAMS 3 3 1401A 1403A A29 3 2 NC 1 1 2 1 2 3 3 1404A 2 SOT-23 3 MARKING MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 1 1405A 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MBRA340T3-D

Abstract: 403D MBRA340T3 MBRA340T3G DIODE A34
Contextual Info: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE A34

Abstract: 403D MBRA340T3 MBRA340T3G A34 Schottky
Contextual Info: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

w6555

Abstract: DIODE A34 DIODE marking code A34
Contextual Info: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE A34

Abstract: 403D MBRA340T3 MBRA340T3G
Contextual Info: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

DIODE marking code A34

Abstract: DIODE A34 on marking A34 code
Contextual Info: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

DIODE A34

Contextual Info: MBRA340T3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay