DIODE A23 Search Results

OF IGBT BSM 200 GAL 120 DN2 1200V 290A

Abstract: HB 200GAL igbt module bsm 200 AC DC chopper AC - DC chopper
Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70

diode chopper

Abstract: BSM300GA120DN2 C67070-A2301-A70
Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70

200GAR

Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
Contextual Info: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70

Contextual Info: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70

BSM200GAL120DN2

Abstract: BSM300GA120DN2 C67070-A2301-A70 diode chopper
Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70

C26B

Abstract: GDS C25/0 diode e61 GDS C25/1231423567896AB
Contextual Info: Technische Information / technical information FF900R12IE4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

LTC4098-3.6

Contextual Info: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF900R12IP4D PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode and NTC

T3D 46 diode

Abstract: Diode T3D 56 T3D 65 diode Diode T3D 08 Diode T3D 38 T3D 49 diode t3d 56
Contextual Info: SIEMENS BYP 300 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Vrrm ^FRMS irr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current

Contextual Info: SIEMENS BUP 200 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 200 D V'CE h 1200V 3.6A Pin 1 Pin 2 Pin 3 G C E Package

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3 EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC C2 *36A436+61234286544

ESJA23-04

Abstract: diode A23
Contextual Info: ESJA23-04 3 . 6 k V *± /j'« a * * * - k : Outline Drawings HIGH VO LTAGE SILICO N DIODE ESJA23& , r i W ' d z L - ? • ESJA23 is high reliability resin molded type high voltage silicon diode for distributor-less automobile ignition system which is sealed a multilayed mesa type silicon chip by epoxy

Contextual Info: Ordering number : EN*A2339 NDDP010N25AZ Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 10A, 420mΩ, DPAK/IPAK Features Electrical Connection • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • 100% Avalanche Tested

Contextual Info: Ordering number : EN*A2325 CPH3461 Advance Information http://onsemi.com N-Channel Power MOSFET 250V, 350mA, 6.5Ω, Single CPH3 Features • On-resistance RDS on 1=5Ω(typ.) • 2.5V drive • Halogen free compliance • Protection diode in Specifications

Contextual Info: Ordering number : EN*A2313 EMH2417R Advance Information http://onsemi.com N-Channel Power MOSFET 12V, 11A, 10mΩ, Dual EMH8 Common Drain Features • Low On-resistance  2.5V drive  Common-drain type  Protection diode in  Built-in gate protection resistor

Contextual Info: Ordering number : EN*A2313 EMH2417R Advance Information http://onsemi.com N-Channel Power MOSFET 12V, 11A, 10mΩ, Dual ECH8 Common Drain Features • Low On-resistance • 2.5V drive • Common-drain type • Protection diode in • Built-in gate protection resistor

SAE0700

Abstract: SAE 0700 ic sae 0700
Contextual Info: 47E J> SIEMENS A23SbOS 003S1Q7 H « S I E 6 SIEMENS AKTIENGESELLSCHAF Audible Signal Device SAE 0700 Bipolar 1C Features • • • • Direct AC-voltage feeding possible through integrated bridge rectifier Integrated overvoltage protection through Z-diode, approx. 28 V

Contextual Info: Ordering number : EN*A2308 NGTB30N60L2WG Advance Information http://onsemi.com N-Channel IGBT 600V, 100A, VCE sat ;1.4V TO-247-3L with Low VF Switching Diode Electrical Connection C(2) Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT tf=80ns typ.

igbt module bsm 200

Abstract: datasheet gal 120 05 td C67070-A2301-A70 AC - DC chopper
Contextual Info: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Package with insulated metal base plate Type VCE IC BSM 200 GAL 120 DN2 1200V 290A Package Ordering Code HALFBRIDGE GAL 2B C67070-A2301-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: Ordering number : EN*A2301 CPH3459 Advance Information http://onsemi.com N-Channel Power MOSFET 200V, 0.5A, 3.7Ω, Single CPH3 Features • On-resistance RDS on 1=2.8Ω(typ) • 4V drive • Halogen free compliance • Input Capacitance Ciss=90pF(typ) • Protection Diode in

Contextual Info: Ordering number : EN*A2329 EFC6612R Advance Information http://onsemi.com N-Channel Power MOSFET 20V, 23A, 5.1mΩ, Dual EFCP Features • 2.5V drive • Protection diode in • Halogen free compliance • Common-drain type • 2KV ESD HBM Applications • Lithium-ion battery charging and discharging switch

Contextual Info: SIEMENS BAT 14-03W Silicon Schottky Diode • DBS mixer application to 12GHz • Medium barrier type • Low capacitance ESD: Electrostatic Discharge sensitive devicé, observe handling precautions! Type Marking Q62702-A1103 1=A Package o Pin Configuration

Contextual Info: SIEMENS Silicon Schottky Diode BAT 14-098 Preliminary Data • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

Contextual Info: QuickSwitch Products High-Speed CMOS qs34X245 qs 34x2245 QuickSwitch 32-Bit Multi Width Bus Switches Semiconductor, I nc. FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional switches connect inputs