DIODE A16 Search Results

transistor c4467

Abstract: mosfet a1694 C4467
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

LM-101-A16

Contextual Info: LM-101-A16 650nm Diode Laser Module Multi purpose, high quality, low cost red laser diode module. Driver electronics included. Collimated beam output. Laser class II device Specifications 25°C Min. Optical CW Output Power PO Center Wavelength λC Output Aparture

DIODE A16

Abstract: if filter 38,9 diode specification table
Contextual Info: Introduction Introduction to Filter Connectors Transient Voltage Suppression Diode Selection Guide Diode Power Selection for Lightning Strike Waveform Threats A DO 160 Waveform 1 MHz Damped Ringing Sine Level Open Circuit Voltage/ Short Circuit Current V/A

LTC4098-3.6

Abstract: 6N16 l436 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

a1688

Abstract: ENA1688 RJ-200
Contextual Info: RJ2003JB Ordering number : ENA1688 SANYO Semiconductors DATA SHEET RJ2003JB Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=300V . High reliability. Fast forward / reverse recovery time.

Contextual Info: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

Contextual Info: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

Contextual Info: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

RD1006LS-SB

Contextual Info: RD1006LS-SB5 Ordering number : ENA1608 SANYO Semiconductors DATA SHEET RD1006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

Contextual Info: RD2006LS-SB5 Ordering number : ENA1613 SANYO Semiconductors DATA SHEET RD2006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

RD2006

Contextual Info: RD2006LS-SB5 Ordering number : ENA1613 SANYO Semiconductors DATA SHEET RD2006LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

Contextual Info: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

Contextual Info: RD0506LS-SB5 Ordering number : ENA1611 SANYO Semiconductors DATA SHEET RD0506LS-SB5 Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation.

RD1004

Abstract: a1615 RD1004LS-SB5 rd1004ls RD1004LS-SB
Contextual Info: RD1004LS-SB5 Ordering number : ENA1615 SANYO Semiconductors DATA SHEET RD1004LS-SB5 Diffused Junction Type Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. Easy to be mounted, good heat dissipation.

2N3904

Abstract: LM84 LM84CIMQA LM84CIMQAX
Contextual Info: & Semiconductor LM84 Diode Input Digital Temperature Sensor with Two-Wire Interface General Description The LM 84 is a rem ote diode tem perature sensor, D elta-Sigm a analog-to-digital converter, and digital o ver-tem perature detector with an SMBus interface. The

P035H

Abstract: IRFP250 HFA50PA60C
Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

P035H

Abstract: HFA50PA60C IRFP250
Contextual Info: PD -95688A HFA50PA60CPbF HEXFRED • • • • • • Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

marking JT

Abstract: 28 MARKING Q62702-A77
Contextual Info: BAS 28 Silicon Switching Diode Array • • For high-speed switching Electrically isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package BAS 28 JT Q62702-A163 Q62702-A77 SOT 143 Maximum ratings Parameter

a16852

Abstract: HA16852MP Hitachi Scans-001
Contextual Info: HA16852MP Optical Communication Receiver/Amplifier The HA16852M P is a receiving amplifier-IC for digital data re­ ceiver via optical fiber. The circuit includes a main Amplifier, comparator, TTL output and ECL output stage, in a mini-square Package. The H A16852M P is advisable to use simultaneously photo-Diode

Contextual Info: SBT150-06JS Ordering number : ENA1652 SANYO Semiconductors DATA SHEET SBT150-06JS Schottky Barrier Diode Twin Type • Cathode Common 60V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

A1653

Contextual Info: SBT250-04JS Ordering number : ENA1653 SANYO Semiconductors DATA SHEET SBT250-04JS Schottky Barrier Diode Twin Type • Cathode Common 40V, 25A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

A1658

Contextual Info: SBR250-10JS Ordering number : ENA1658 SANYO Semiconductors DATA SHEET SBR250-10JS Schottky Barrier Diode Twin Type • Cathode Common 100V, 25A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

d1609

Contextual Info: SBT700-06RH Ordering number : ENA1635 SANYO Semiconductors DATA SHEET SBT700-06RH Schottky Barrier Diode Twin Type • Cathode Common 60V, 70A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features