DIODE A131 Search Results

Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such

Contextual Info: 3QE D • b457SaS OOETHMB 4 ■ N E C ELECTRONICS INC T'Hl-07 LASER DIODE J N D L5009D 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aA sP D C -P B H LA SER D IO D E DESCRIPTIO N NDL60Q9D is a1310 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH

Contextual Info: ATP207 Ordering number : ENA1319A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP207 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in

Contextual Info: ATP202 Ordering number : ENA1317A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP202 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in

A1318 T

Contextual Info: ATP203 Ordering number : ENA1318A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP203 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in

a1310

Contextual Info: HL-PCB-3231S9AM1GC-A Features Description z3.2mmx3.1mm zLOW SMT LED, 0.68mm THICKNESS. POWER CONSUMPTION. zWIDE zIDEAL The Red source color devices are made with DH GaP on GaAs substrate Light Emitting Diode. VIEWING ANGLE. The Green source color devices are made with Gallium

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: Ordering number : ENA1318A ATP203 N-Channel Power MOSFET http://onsemi.com 30V, 75A, 8.2mΩ, Single ATPAK Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: THYRISTOR MODULE PK1PD1250QB Power Thyristor/Diode Module PK 250G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 800 V are available. A p p lica tio n s

Contextual Info: Ordering number : ENA1317A ATP202 N-Channel Power MOSFET http://onsemi.com 30V, 50A, 12mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA1319A ATP207 N-Channel Power MOSFET http://onsemi.com 40V, 65A, 9.1mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: THYRISTOR MODULE P K pd,pe 2 0 0 G B UL;E76102(M) Power Thyristor/Diode Module P K 2 0 0 G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage rat­ ings up to 800 V are available.

Ry110

Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #

sony flyback transformer

Abstract: smps repair circuit ultrasonic transducers 48V sony flyback transformer datasheet fast recovery diode 600v 5A Ultrasonic Cleaning Transducer FCH10A15 sony flyback FAST RECOVERY DIODE 200ns 8A 40V FAST RECOVERY DIODE 200ns
Contextual Info: TABLE of CONTENTS Diode — EMI and Efficiency————–—————————– Rectification Noise—————————————————— 3 series of SBD———————————————————— SBD and Thermal Runaway——————————————

C67078-A1315-A2

Contextual Info: SIEMENS SI PM OS Power MOS Transistors ’ D SC on • • • • BUZ 76 BUZ 76 A = 400 V = 3 .0 / 2.7 A = 1 .8 /2 .5 Q N channel Enhancement mode Avalanche-proof Package: TO-220 A B 1) Type Ordering code BUZ 76 C67078-A1315-A2 BUZ 76 A C67078-A1315-A3 Maximum Ratings

V23870-A1313-K101

Abstract: V23870-A1313-K201
Contextual Info: Fiber Optics OptiPort SFF BIDI Transceiver 100 Mbit/s, 1550 nm Tx / 1310 nm Rx V23870-A1313-Kx01 Preliminary Datasheet This OptiPort BIDI transceiver is a bi-directional Small Form Factor SFF transceiver designed for full-duplex communication over a single fiber. The

Contextual Info: Fiber Optics OptiPortTM SFF BiDi -Transceiver 100 Mbit/s, 1550 nm Tx / 1310 nm Rx V23870-A1313-Kx01 Preliminary Datasheet This OptiPortTM BIDI®-TRX is a bi-directional Small Form Factor SFF transceiver designed for fullduplex communication over a single fiber. The single

transmitter laser 1550nm rise time

Abstract: 1310 nm laser diode style Laser Diode 1550 nm dBm
Contextual Info: V23870-A1311-X1Y200 155 Mb/s, 1550 nm Tx / 1310 nm Rx Bi-Directional SFF Transceiver 9.71 .382 13.50 .531 3 .118 12 .472 0.38 .015 1.78 .070 0.25 .010 7.11 .280 TEMPERATURE MEASUREMENT LOCATION 49.01 1.930 3.92 .154 2X 17.79 .700 1.07 .042 4.56 .180 20.19

TDA 2388

Contextual Info: V23870-A1311-X1Y200 155 Mb/s, 1550 nm Tx / 1310 nm Rx Bi-Directional SFF Transceiver 9.71 .382 13.50 .531 3 .118 12 .472 0.38 .015 1.78 .070 0.25 .010 7.11 .280 TEMPERATURE MEASUREMENT LOCATION 49.01 1.930 3.92 .154 2X 17.79 .700 1.07 .042 4.56 .180 20.19

Contextual Info: Fiber Optics V23870-A1317-K500 TM Optiport -iSFP BiDi -TRX Intelligent SFP Pluggable Bi-Directional Transceiver 155Mbit/s 1550nm Tx / 1310nm Rx LC Connector Preliminary Data The Optiport TM -iSFP BiDi® -TRX is an Intelligent Small Form Factor Pluggable SFP transceiver designed for

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

A1318

Abstract: HSOP36 HSOP36R LB11975 3 phase regenerative braking 2712PH
Contextual Info: Ordering number : ENN6497A Monolithic Digital IC LB11975 High-Speed CD-ROM Spindle Motor Driver IC Overview Package Dimensions The LB11975 is a monolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and DVD-ROM drives. To minimize heat generation

Contextual Info: Ordering number : ENN6497A Monolithic Digital 1C LB11975 SAÑYO High-Speed CD-ROM Spindle Motor Driver IC Overview Package Dimensions The LB11975 is a m onolithic bipolar IC developed for uses as a spindle motor driver for high-speed CD-ROM and D VD -RO M drives. To m inim ize heat generation

transistor buz 36

Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A