DIODE A13 Search Results
DIODE A13 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE A13 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TND903
Abstract: 1N4447 tnd905 TND908 1N3070 1N3595 1N3600 1N4153 TND918 TND933
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OCR Scan |
14-pin16-pin1n30701n3595+8 | |
DA573S6
Abstract: diode marking 4c a1383 A1383 transistor Marking 4c
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da573s6ena1383iec61000-4-2150pf+5 | |
marking 4AContextual Info: DA473S6 Ordering number : ENA1377 SANYO Semiconductors DATA SHEET DA473S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • Contact discharge 18kV guarantee IEC61000-4-2 . 6-pin package containing 4 devices. Halogen free compliance. |
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da473s6ena1377iec61000-4-2150pf+2 | |
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Contextual Info: RD0506LS-SB Ordering number : ENA1390 SANYO Semiconductors DATA SHEET RD0506LS-SB Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=600V . High reliability. Easy to be mounted, good heat dissipation. |
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rd0506ls-sbena1390a1390-3/3 | |
A1390
Abstract: Diffused Silicon Diode Ultrahigh-Speed Switching Diode
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rd0506ls-sbena1390pw100scycle50+3 | |
A1388
Abstract: d1708
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rd2006ls-sbena1388pw100sduty50+3 | |
Sprague 1N3600
Abstract: diode R 360 BL diode a13 TND907 diode arrays tnd903 A1090 sprague TND 16-pin a plastic package
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OCR Scan |
14-pin16-pin1n30701n3595+14 | |
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Contextual Info: MMBD1501A / 1503A / 1504A / 1505A SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features Very Low Leakage Current Single and Dual Diode Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications |
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mmbd1501aot-23mil-std-202 | |
A1378Contextual Info: DB473S6 Ordering number : ENA1378 SANYO Semiconductors DATA SHEET DB473S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • • Contact discharge 13kV guarantee IEC61000-4-2 . 6-pin package containing 4 devices. Low capacitance. Best suited for touch panel protection. |
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db473s6ena1378iec61000-4-2a1378-4/4+1 | |
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Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such |
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dk-8381kled0002e01 | |
d918
Abstract: D938 TND903 TND907
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14-pin16-pin1n30701n3595+7 | |
tnd903
Abstract: Allegro MicroSystems tnd 903 diode
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0s043314-pin16-pin1n3070+7 | |
ND921
Abstract: br 903
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14-pin16-pin1n30701n3595+8 | |
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Contextual Info: 3QE D • b457SaS OOETHMB 4 ■ N E C ELECTRONICS INC T'Hl-07 LASER DIODE J N D L5009D 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aA sP D C -P B H LA SER D IO D E DESCRIPTIO N NDL60Q9D is a1310 nm laser diode especially designed for long distance high capacity transmission systems. The DC-PBH |
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b457sashl-07l5009dndl60q9d+3 | |
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MMBD1501A
Abstract: marking a11 diode MMBD1503A marking a11 cd200 MARKING A15 MMBD1504A MMBD1505A diode a15
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mmbd1501ammbd1505aot-23mmbd1503a+7 | |
mtl7760ac
Abstract: mtl 7796 MTL7756ac MTL7787P MTL7787 MTL 7756ac MTL7778ac MTL7706 MTL7798 MTL7761ac
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mtl7700inm7700mtl7760acmtl 7796+8 | |
mtl 7796
Abstract: MTL7787 MTL*787 MTL 7756ac mtl7760ac MTL7755AC MTL*706 7755ac mtl7756ac safety barrier mtl7756AC
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mtl7700inm7700inm7700-5mtl 7796+9 | |
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Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES HL-PT-1608H184W-A13 WHITE Features Description •1.6mmX0.8mm SMT LED, 0.68mm THICKNESS. The White source color devices are made with DH InGaN •LOW POWER CONSUMPTION. on GaAs substrate Light Emitting Diode. |
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hl-pt-1608h184w-a134000pcsb0035jan/23/2007 | |
TND908
Abstract: tnd903
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14-pin16-pin1n30701n3595+6 | |
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Contextual Info: SEMICONDUCTOR tm MMBD1501/A / 1503/A / 1504/A / 1505/A 11 i]] M A RKING MMBD1501 MMBD1503 MMBD1504 MMBD1505 11 13 14 15 MMBD1501A MMBD1503A MMBD1504A MMBD1505A A11 A13 A14 A15 High Conductance Low Leakage Diode Sourced from Process 1L. Absolute Maximum RatitlQS |
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mmbd1501/a1503/a1504/a1505/a+6 | |
A139N
Abstract: SCR Handbook, General electric snubber A139 A139 Series d 667 A139M C144 e s j A139ER STG-500 General electric SCR
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a139nscr handbook, general electric snubbera139a139 series+6 | |
MMBD1503
Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
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ot-23mmbd1501mmbd1503mmbd1504+9 | |
DD175N
Abstract: KM17
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dd175nkm17 | |
A135
Abstract: DZ600N KM17
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dz600na135/95a135km17 | |