DIODE A12 Search Results

Contextual Info: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Symbol Parameter Value 75 Diode reverse voltage

Contextual Info: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75

Contextual Info: SIEMENS BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75

Q62702-A1239

Contextual Info: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage

a1231

Abstract: Q62702-A1231
Contextual Info: BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VPS05176 Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage

Contextual Info: SIEMENS BAS 16-02W Silicon Sw itching Diode Prelim inary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q 62702-A1239 1=A SCD-80 2 =C Maxim um Ratings Param eter Sym bol Diode reverse voltage

a12 SOT363

Abstract: W1 sot 363
Contextual Info: MBD4448HAQW/HADW/HCDW/HSDW/HTW Switching Diode Preliminaty Small Signal Diode SOT-363 Features Fast switching speed Surface device type mounting Moisture sensitivity level 1 High Conductance Power Dissipation For General Purpose Switching Applications

TDA8808

Abstract: TDA8808AT TDA8808T TDA8808T/C3
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players

PDF PIN PHOTO DIODE DESCRIPTION

Abstract: tda8808 TDA8808AT TDA8808T GCLF PHOTO diode
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8808T TDA8808AT Photo diode signal processor for compact disc players Product specification File under Integrated Circuits, IC01 November 1987 Philips Semiconductors Product specification Photo diode signal processor for compact disc players

australia heat sink

Abstract: ARR04P3900
Contextual Info: Industrial Microphotonics Company 3900W QCW Laser Diode Array Part Number: ARR04P3900 Z PACKAGE • Packaged 112 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS

australia heat sink

Abstract: ARR03P1900
Contextual Info: Industrial Microphotonics Company 1900W QCW Laser Diode Array Part Number: ARR03P1900 Y PACKAGE • Packaged 54 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER

A12 diode

Abstract: diode 0450
Contextual Info: TESDQ5V0ULC Ultra Low Capacitance ESD Protection Diode Small Signal Diode 0402 DFN1006 Features Cell Phone Handsets and Accessories Microprocessor based equipment Personal Digital Assisitants(PDA's) Notebooks,Desktops,and Servers Pb free version, RoHS compliant, and Halogen free

Contextual Info: RB520CS-30 Schottky Barrier Diode Preliminary Small Signal Diode SOD-923 B Features C A Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 D Matte Tin Sn lead finish with Nickel(Ni) underplate

A116 diode

Abstract: DIODE A116 as 15-f DIODE A118 AP-222 diode smd6 44
Contextual Info: Introduction Diode array summary see page 227 Part number DC reverse voltage V r (V) Mean rectifying current l0 (mA) Reverse Terminal recovery time capacitance (max) trr (ns) CT (PF) Package type Circuit diagram High speed switching diode arrays FMN1 80

DIODE 1206

Abstract: TS4148
Contextual Info: TS4148 RAG 400mW High Speed SMD Switching Diode Small Signal Diode 1206 A B Features —Designed for mounting on small surface. —Extremely thin/leadless package C —High mounting capability,strong surage with stand, high reliability. D —Pb free version and RoHS compliant

A12 smd

Abstract: A12 diode TS4148 TA 0805 DIODE TS4148RBG
Contextual Info: TS4148 RBG 400mW High Speed SMD Switching Diode Small Signal Diode 0805 A Features B —Designed for mounting on small surface. —Extremely thin/leadless package C —High mounting capability,strong surage with stand, high reliability. D —Pb free version and RoHS compliant

transistor A1270

Abstract: A1270 A1270 transistor datasheet RD2004LN RD2004 a1270* transistor
Contextual Info: RD2004LN Ordering number : ENA1270 SANYO Semiconductors DATA SHEET RD2004LN Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

TS4148C

Abstract: A12 smd
Contextual Info: TS4148C RCG 200mW High Speed SMD Switching Diode Small Signal Diode 0603 A B Features —Designed for mounting on small surface. —Extremely thin/leadless package C —High mounting capability,strong surage with stand, high reliability. D —Pb free version and RoHS compliant

A1270

Abstract: transistor A1270 RD2004 A1270 transistor datasheet RD2004LN A-1270 a1270* transistor
Contextual Info: RD2004LN Ordering number : ENA1270A SANYO Semiconductors DATA SHEET RD2004LN Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=400V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

A1208

Abstract: RD1006LS
Contextual Info: RD1006LS Ordering number : ENA1208 SANYO Semiconductors DATA SHEET RD1006LS Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode Features • • • • High breakdown voltage VRRM=600V . High reliability. One-point fixing type plastic molded package facilitating easy mounting and heat dissipation.

Contextual Info: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such

KL3 SMD diode

Abstract: SMD MARKING CODE KL3 SMD MARKING CODE A12 smd code a12 KL3 SMD kl3 sot 23 BAT54C-01 kl3 diode MARKING A12 SOT-23 BAT54C
Contextual Info: BAT54C-01 230mW SMD Schottky Barrier Diode Small Signal Diode SOT-23 A Features F B E —Fast switching speed —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate —Pb free version and RoHS compliant

S3 marking DIODE

Abstract: smd diode code s3 SMD MARKING CODE A12 A12 smd smd code a12 diode IR 100 8K A12 diode Marking Code s3 diode Smd diode s3 marking A12
Contextual Info: 1SS388 150mW, SMD High Speed Switching Diode Small Signal Diode SOD-523 B Features C Fast switching device Trr<4.0nS A Surface device type mounting Moisture sensitivity level 1 D Matte Tin(Sn) lead finish Pb free version,RoHS compliant Green compound (Halogen free) with suffix "G" on

TESDC15V

Contextual Info: TESDC15V Bi-directional TVS Diode Array Small Signal Diode SOD-323g B C Features A —Meet IEC61000-4-2 ESD ±15kV (air), ±8kV (contact) —Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns) D —Meet IEC61000-4-5 (Lightning) rating. 24A (8/20 s) —Protects one Bi-directional I/O line