DIODE A118 Search Results

Q68000A1185

Abstract: bav99
Contextual Info: BAV99 Silicon Switching Diode Array For high-speed switching Connected in series C2.A1 Type 0 BAV 99 Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape Package A7 Q68000-A1185 Q68000-A549 SOT 23 Maximum ratings per diode Parameter

A116 diode

Abstract: DIODE A116 as 15-f DIODE A118 AP-222 diode smd6 44
Contextual Info: Introduction Diode array summary see page 227 Part number DC reverse voltage V r (V) Mean rectifying current l0 (mA) Reverse Terminal recovery time capacitance (max) trr (ns) CT (PF) Package type Circuit diagram High speed switching diode arrays FMN1 80

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

DIODE A118

Abstract: K0024
Contextual Info: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

DIODE A118

Contextual Info: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

DIODE A118

Abstract: 8199E "RECTIFIER DIODE"
Contextual Info: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

DIODE A118

Contextual Info: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

Contextual Info: Ordering number : ENA1182A ECH8308 P-Channel Power MOSFET http://onsemi.com –12V, –10A, 12.5mΩ, Single ECH8 Features • • • Best suited for load switching 1.8V drive Protection diode in • • Low ON-resistance Halogen free compliance Specifications

Contextual Info: ECH8308 Ordering number : ENA1182A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 General-Purpose Switching Device Applications Features • • • Best suited for load switching 1.8V drive Protection diode in • • Low ON-resistance Halogen free compliance

Contextual Info: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: ECH8663R Ordering number : ENA1184A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: ECH8663R Ordering number : ENA1184A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: ECH8663R Ordering number : ENA1184A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: ECH8664R Ordering number : ENA1185A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: Ordering number : ENA1185A ECH8664R N-Channel Power MOSFET http://onsemi.com 30V, 7A, 23.5mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch

Contextual Info: Ordering number : ENA1184A ECH8663R N-Channel Power MOSFET http://onsemi.com 30V, 8A, 20.5mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch

DIODE A118

Contextual Info: DF100AA120/160 UL;E76102 M Power Diode Module D F 1 0 0 AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Ry110

Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes

transistor BU 102S

Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
Contextual Info: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China