DIODE A118 Search Results

DIODE A118

Abstract: K0024
Contextual Info: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

DIODE A118

Abstract: 8199E "RECTIFIER DIODE"
Contextual Info: Technische Information / Technical Information Netz-Gleichrichterdiode Rectifier Diode 46 DN 02 . 06 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

Contextual Info: Ordering number : ENA1185A ECH8664R N-Channel Power MOSFET http://onsemi.com 30V, 7A, 23.5mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch

Contextual Info: Ordering number : ENA1184A ECH8663R N-Channel Power MOSFET http://onsemi.com 30V, 8A, 20.5mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch

DIODE A118

Contextual Info: DF100AA120/160 UL;E76102 M Power Diode Module D F 1 0 0 AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electri­ cally isolated from semiconductor elements for simple heatsink

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Ry110

Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #

MICROWAVE ASSOCIATES ISOLATOR

Abstract: AS218 transistor
Contextual Info: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and

IC951

Abstract: stm diode C818 smd diode mx c321 ic501 smd diode ge r803 pin diagram of optical detector IC501 R435 RF receiver MODULE CIRCUIT DIAGRAM LDR 03 PHOTO RESISTOR 2222A SMD transistor C458
Contextual Info: APPLICATION NOTE Fiber optic transceiver demo board STM16 OM5801 AN96051 Philips Semiconductors Philips Semiconductors OM5801 Application Note AN96051 2 Philips Semiconductors Fiber optic transceiver demo board STM16 Application Note AN96051 APPLICATION NOTE

d1340

Abstract: ds1340 DS1340Z-3 DS1340Z-33 M41T00 D1340-33 DS1340U-18 DS1340U-3 DS1340Z-18
Contextual Info: Rev 0; 6/03 2-Wire RTC with Trickle Charger The DS1340 is a real-time clock RTC /calendar that is pin compatible and functionally equivalent to the ST M41T00, including the software clock calibration. The device additionally provides trickle-charge capability

D134033

Abstract: D1340-33 d1340 DS1340-33 DS1340 DS1340C DS1340Z-18 DS1340Z-3 DS1340Z-33 M41T00
Contextual Info: Rev 2; 12/04 I2C RTC with Trickle Charger Features The DS1340 is a real-time clock RTC /calendar that is pin compatible and functionally equivalent to the ST M41T00, including the software clock calibration. The device additionally provides trickle-charge capability

TLE4941

Abstract: temperature sensor circuit diagram in ecu Hall sensor seat HAL573 MAX9921AUB automotive ecu manual 566 hall sensor max9921 hall sensor 40 E 4 pin hall sensor
Contextual Info: 19-4119; Rev 1; 1/10 KIT ATION EVALU E L B AVAILA Dual, 2-Wire Hall-Effect Sensor Interface with Diagnostics Features ♦ Withstands 60V at BAT Supply and Hall Inputs ♦ 6V to 18V Operating Voltage Range ♦ Provides Supply Current and Interfaces to Two 2-Wire Hall Sensors

4 pin hall sensor

Abstract: Hall
Contextual Info: 19-4119; Rev 1; 1/10 KIT ATION EVALU E L B AVAILA Dual, 2-Wire Hall-Effect Sensor Interface with Diagnostics Features ♦ Withstands 60V at BAT Supply and Hall Inputs ♦ 6V to 18V Operating Voltage Range ♦ Provides Supply Current and Interfaces to Two 2-Wire Hall Sensors

Contextual Info: blE D For 17313L5 OOllflSS 3flfl M B U B f Z f y ^ j Assistance, M a d Your L m l Salesperson BURR-BROÜJN CORP B U R R -B R O W N « REF200 AVAILABLE IN DIE DUAL CURRENT SOURCE/CURRENT SINK FEATURES APPLICATIONS • COMPLETELY FLOATING: No Power Supply or Ground Connections

LB1930M

Abstract: MFP10S
Contextual Info: Ordering number : EN6068A Monolithic digital 1C LB1930M S ' A fiY O , Single-Channel Low Saturation Voltage Forward/Reverse Motor Driver Overview The LB 1930M is a low saturation voltage H-bridge forward/reverse motor driver that supports low-voltage drive. This device is optimal for CD, MD, and cassette

B82 42 004

Abstract: AP-585 AP-589 PGA370 SC242 243332 243658 OA47
Contextual Info: Intel Celeron Processor Datasheet Product Features • ■ ■ ■ ■ Available at 266 MHz and 300 MHz core frequencies without level two cache; 300A MHz, 333 MHz, 366 MHz, and 400 MHz core frequencies with 128 KB level two cache Binary compatible with applications

LB1930m

Abstract: MFP10S
Contextual Info: Ordering number : EN6068A Monolithic digital IC LB1930M Single-Channel Low Saturation Voltage Forward/Reverse Motor Driver Package Dimensions unit: mm 3148-MFP10S 10 0.625 [LB1930M] 5.15 6.4 6 4.4 • The low saturation voltage reduces IC internal heating

Contextual Info: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

ECH8308

Contextual Info: ECH8308 Ordering number : ENA1182 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 General-Purpose Switching Device Applications Features • • • • Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance.

Contextual Info: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

Contextual Info: ECH8664R Ordering number : ENA1185 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

A1185

Abstract: marking tk
Contextual Info: ECH8664R Ordering number : ENA1185 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8664R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

Contextual Info: 2MBI75F-060 75A IGBT : O utline D ra w in g s IGBT MODULE 23.0 , 23.0 , 2-05.4 • Features • I- 1-— rJ lo.O 10.0 10.0 Lo w S a tu ra tio n V o lta g e • U I± m W ) ( M O S ^ r - H * i £ ) V o lta g e D rive U V ariety o f P ow er C apacity Series

sc1142

Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving