DIODE A 4 W Search Results
DIODE A 4 W Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODE A 4 W Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Ordering number: EN 3263 LB1105M No.3263 Monolithic Digital IC 6-Channel X 4-Unit Diode Array The LB1105M is a diode array IC th a t integrates 4 units of 6-channel diode array with anode-common configuration. It is especially suited for keyboard-use diode m atrix, OR gate applications. Replacement of |
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LB1105M LB1105M 1260TA | |
eft303
Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
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ERE24-ERE74 ERE24 ERE74 50HzIE Mftl80\ Eft30 19S24 I95t/R89) eft303 jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151 | |
LB1105M
Abstract: b073 LBX105M
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LB1105M LBX105M LB1105M b073 | |
EL6119
Abstract: EL6119CL EL6119CL-T13
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EL6119 EL6119 EL6119CL EL6119CL-T13 | |
EL6146
Abstract: EL6146CU-T7 MDP0040
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EL6146 EL6146 EL6146CU-T7 MDP0040 | |
Contextual Info: N AUER PHILIPS/DISCRETE L IE bbS3^31 D02b230 ‘IbM D APX BAS45L A LOW LEAKAGE DIODE FOR SURFACE MOUNTING The B A S 4 5 L is a switching diode with a very low reverse current. This S M diode is a leadless diode in a hermetically sealed SO D -8 0 envelope with lead/tin-plated metal |
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D02b230 BAS45L bb53T31 Q02b232 bb53131 Q0Eb233 | |
NX5320EH
Abstract: NX5320EH-AZ PX10160E
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NX5320EH NX5320EH PL10660EJ01V0DS NX5320EH-AZ PX10160E | |
Thyristor ABB ys 150Contextual Info: A S E A BROWN/ABB SEMICON û3~" D I Schnelle Diode-Thyristor-Module GCI 4Û3GÛ □□OGEGl 4 T - 2 5 “ OÎ Fast switching diode-thyristor modules Daten pro Diode od erT hyristor/data per diode or th y ris to r/les caractéristiques se rapportent à 1 diode ou à 1 thyristor |
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Contextual Info: Central CMASH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-923 CASE MARKING CODE: A TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CMASH-4 is a high quality Schottky Diode designed for applications where very small size and operational efficiency are prime |
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OD-923 200mA) 13-February | |
TS DIODO
Abstract: LB1105M IC 3263 6-Channel
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LB1105M LB1105M MFP30SD 1260TA TS DIODO IC 3263 6-Channel | |
NX6311EH
Abstract: NX6311EH-AZ PX10160E
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NX6311EH NX6311EH PL10631EJ02V0DS NX6311EH-AZ PX10160E | |
882LContextual Info: Central CFSH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CFSH-4 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Tiny Leadless Package, |
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OD-882L 200mA) OD-882L, 22-February 882L | |
ultra low reverse current schottky
Abstract: marking code L
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OD-882L 200mA) 23-May ultra low reverse current schottky marking code L | |
CMKTVS5-4Contextual Info: CMKTVS5-4 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW CAPACITANCE QUAD TVS/DIODE ARRAY DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTVS5-4 is a 4-line TVS/Diode array packaged in an ULTRAminiTM surface mount case. With its low capacitance, this |
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OT-363 IEC61000-4-2, CMKTVS5-4 | |
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NJW4710
Abstract: NJW4710VE1
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NJW4710 NJW4710 NJW4710VE1 200MHz 500MHz SSOP24-E1 375TYP NJW4710VE1 | |
NJW4710
Abstract: NJW4710VE1
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NJW4710 NJW4710 NJW4710VE1 200MHz 500MHz SSOP24-E1 375TYP NJW4710VE1 | |
RUR460Contextual Info: RURD460, RURD460S November 2013 Data Sheet 4 A, 600 V, Ultrafast Diode Features • Ultrafast Recovery trr = 60 ns @IF = 4 A The RURD460, RURD460S is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching |
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RURD460, RURD460S RURD460S RUR460 | |
CMXTVS5-4Contextual Info: CMXTVS5-4 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW CAPACITANCE QUAD TVS/DIODE ARRAY DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXTVS5-4 is a 4-line TVS/Diode array packaged in a SUPERminiTM surface mount case. This device, with its low capacitance, was designed to protect four high speed |
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OT-26 IEC61000-4-2: CMXTVS5-4 | |
6W4 tube
Abstract: I960 GTA 15 general electric
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ET-T1652 K-5561I-TD 6W4 tube I960 GTA 15 general electric | |
Contextual Info: CMASH-4 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMASH-4 is a high quality Schottky Diode designed for applications where very small size and operational efficiency are prime requirements. |
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OD-923 26-May | |
1625nm LD CAN
Abstract: JOG-00453
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JOG-00453 OL6492N-A, OL692N-A OL6492N-A 1625nm OL692N-A 1625nm LD CAN JOG-00453 | |
MARKING CODE A
Abstract: SCHOTTKY DIODE 10A 0.35V
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OD-923 200mA) 26-May MARKING CODE A SCHOTTKY DIODE 10A 0.35V | |
Contextual Info: ESD5V3U4RRS Ultra-Low Capacitance ESD Diode Array • Rail-to-rail diodes with internal TVS diode • ESD / transient protection of four I/O lines and one Vcc line exceeding: IEC61000-4-2 ESD : ± 15 kV (contact) IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns) |
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IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 | |
07255Contextual Info: TOSHIBA LASER/FBR OPTIC ^ 0 PRODUCT INFORMATION w j/ mm / / ^0^7255 I u I I L j L 0015030 3 • TOSb.T-4Ï-07 / / TOSHIBA LASER DIODE TOLD 70 / TENTATIVE ~ T o lJ > 4 - D th * . ;s S ì c u l o / i . ^ c £ ^ f L & 'fO h tn ) TOSHIBA LASER DIODE, TOLD70, is a InGaAsP/lnP type laser diode with a fiber |
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OLD70, -T-4T-07 07255 |