DIODE A 4 W Search Results

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown

WARBLE TONE GENERATORS

Contextual Info: TS2418 Telephone tone ringer with bridge diode Pin assignment: 1. Ring 5. OUT 2. GND 6. AVA 3. SRC 7. RC 4. OFR 8. TIP Supply Voltage 26V max. Calling Voltage (f=50Hz) Continuous General Description The TS2418 is a monolithic integrated circuit telephone tone ringer with bridge diode, when coupled with an appropriate

schematic diagram of ip camera

Abstract: CSP marking code CM1230-02 CM1230-08CP CM1230-J2CP CM1230-02CP cm1-23024
Contextual Info: CM1230 2, 4, and 8-Channel Low-Capacitance ESD Protection Array Product Description The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in a CSP form factor. It is ideal for protecting systems with high data and clock rates or for circuits that

TLP620

Abstract: TLP620-2 TLP620-4
Contextual Info: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode

dg1u

Abstract: TLP624
Contextual Info: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG8G4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D rain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low D r a i n-Source ON Resistance

Contextual Info: TLP628,-2,-4 GaAs IRED & PHOTO-TRANSISTOR T LP 62B I P R O G R A M M A B L E C ONTROLLERS. D C -O U T P U T M O D U L E . T E L E C O M M U N IC A T IO N . The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor

1SV304

Contextual Info: T O SH IB A 1SV304 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 0 4 VCO FOR VHF BAND RADIO U nit in mm • Sm all Package • High Capacitance Ratio : C i v / C 4 v = 3.0 Typ. • Low Series Resistance : rs = 0 .2 7 0 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

ic 4PC

Abstract: 115b1
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP320,-2,-4 TENTATIVE DATA T L P 3 2 0 U nit in mm T E L E C O M M U N IC A T IO N TLP320 OFFICE M A C H IN E ~ A T ELEP H O N E USE E Q U IP M E N T 3 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.

NS-106

Abstract: 2SK3354 NS 106
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3354 TO-263 +0.1 1.27-0.1 RDS on 2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2

TIL186

Contextual Info: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor

IRGPS4067

Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Contextual Info: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 

AOD5B60

Contextual Info: AOD5B60D 600V, 5A Alpha IGBT TM with Diode General Description Product Summary The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt

lm90 14

Abstract: T11C DS200337 LM90
Contextual Info: LM90 LM90 ±3°C Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS126 LM90 ± 3˚C Accurate, Remote Diode and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM90 is an 11-bit digital temperature sensor with a

FB15R06KL4

Abstract: eupec fb15r06kl4 NTC 5e 842e3
Contextual Info: Technische Information / Technical Information FB15R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

brake rectifier motor

Abstract: vub 70 diode B25 VUB72 dc chopper circuit DIODE RECTIFIER BRIDGE SINGLE E72873 B25 diode Three Phase Rectifier Bridge with Brake IGBT vub 70 -16
Contextual Info: VUB 72 VRRM = 1200/1600 V IdAVM = 110 A Three Phase Rectifier Bridge with Brake Chopper 1 2 D1 D3 D5 D2 D4 D6 NTC 4 5 D T 6 7 Features Input Rectifier D1 - D6 Symbol Conditions VRRM VUB 72 -12 NO1 VUB 72 -16 NO1 Maximum Ratings IFAV IDAVM IFSM 1200 1600 V

ke92

Abstract: 1Ft TRANSISTOR hb595 ke921k05
Contextual Info: m¥EREX P O W E R E X INC B^E T> m T B T H b S l O G D M M b O 'ì H P R X Powerex, Inc., Hlllls S tre e t, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KE921K05HB r - 3 3 -35"

55332R34-028

Abstract: 5424R29-001
Contextual Info: DATA SHEET SKY12207-306LF: 0.9-4.0 GHz 50 W High Power Silicon PIN Diode SPDT Switch Applications • Transmit/receive switching and failsafe switching in TDSCDMA, WiMAX, and LTE base stations • Transmit/receive switching in land mobile radios and military

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

diode k1

Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 600 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current

2x61

Abstract: IXYS DSEI 2X61 6112P
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

250/TRANSISTOR 132-gd

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 9 A VRRM = 600 V trr = 15 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 9-06CR A = Anode, C = Cathode * Patent pending

IRG4PC50UDPBF

Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc
Contextual Info: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter