DIODE A 4 W Search Results

eft303

Abstract: jSw Diode diode b29 T460 ERE74 diode JSW JSW 70 ERE24 P930 T151
Contextual Info: E R E 2 4 ' E R E 7 4 2 o a X ± ' < T? - 9 4 * - Y FAST RECOVERY DIODE Features • H7 7 * • a Glass passivated chip Stud mounted *. Applications • Switching power supplies • ft' fJi' Free-wheel diode • ' <7— Snubber diode • Others. Maximum Ratings and Characteristics

NJW4710

Abstract: NJW4710VE1
Contextual Info: NJW4710 4ch Laser Diode Driver for Blue Laser Diode •GENERAL DESCRIPTION NJW4710 is a laser diode driver for the operation of a grounded blue laser diode. It is suited to drive a blue laser diode, because it is operated by split power supply. It includes 4 channels current amplifiers

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown

4 pin optocoupler

Abstract: H11B815 OPTOCOUPLER 4-PIN application note
Contextual Info: 4-PIN PHOTODARLINGTON OPTOCOUPLER H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 4 FEATURES 1 1 • Compact 4-pin package • Current Transfer Ratio: 600% minimum at IF = 1 mA

74LS195A

Abstract: LS195A SN54LSXXXJ SN74LSXXXD SN74LSXXXN
Contextual Info: SN54/74LS195A UNIVERSAL 4-BIT SHIFT REGISTER The SN54 / 74LS195A is a high speed 4-Bit Shift Register offering typical shift frequencies of 39 MHz. It is useful for a wide variety of register and counting applications. It utilizes the Schottky diode clamped process to

2SD2423

Abstract: hitachi Zener Diode marking code DSA003646
Contextual Info: 2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 2, 4 1 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Flange ID 2 kΩ (Typ) 0.5 Ω

NX8330RA

Abstract: NX8330RA-BA NX8330RA-CA STM-16 Laser Diode 14 pin DIL
Contextual Info: 1310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP NX8330RA STRAINED MQW-DFB LASER DIODE MINI-DIL PIGTAILED MODULE FOR 2.5Gb/s FEATURES DESCRIPTION • HIGH-SPEED RESPONSE: tr = 40 ps, tf = 100 ps The NX8330RA is a λ/4-phase shifted DFB Distributed FeedBack laser diode mini dual in-line (DIL) pigtailed module with

mdf 24

Contextual Info: DIODE NON-ISOLATED TYPE MDF(R)200A MDF （R） 200A is a diode with flat mounting base which is designed for use in various rectifier applications. 4-φ7 32 2 VRRM＝500V ● Easy Construction with Anode （F） Type and Cathode （R） type. ● High reliability by glass passivation

tk19 infrared

Abstract: tk19 Telefunken tk19 ir tk19 VISHAY tk19 tk19 200 CNY65 ir-diode tk19 001
Contextual Info: CNY65Exi Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65Exi consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and

NDL7620P

Abstract: NDL7620P1 NDL7620P1C NDL7620P1D NDL7620P2 NDL7620P2C NDL7620PC NDL7620PD STM-16 SM 4108
Contextual Info: 1310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s NDL7620P SERIES FEATURES DESCRIPTION • PEAK EMISSION WAVELENGTH: λP = 1310 nm The NDL7620P Series is a 1310 nm λ/4-phase-shifted DFB Distributed Feed-Back laser diode coaxial module with internal optical isolator. Newly developed strained Multiple

SF10LC40

Contextual Info: Super Fast Recovery Diode Twin Diode OUTLINE Package I FTO-220 SF10LC40 Unit :mm Weight 1.9« Typ 4.5 4 0 0 V 10 A Feature • ñS'fX • trr=50ns • 711^-10 K 2kV ( S II • • • • Low Noise tnr=50ns Full Molded Dielectric Strength 2kV Main Use •

WARBLE TONE GENERATORS

Contextual Info: TS2418 Telephone tone ringer with bridge diode Pin assignment: 1. Ring 5. OUT 2. GND 6. AVA 3. SRC 7. RC 4. OFR 8. TIP Supply Voltage 26V max. Calling Voltage (f=50Hz) Continuous General Description The TS2418 is a monolithic integrated circuit telephone tone ringer with bridge diode, when coupled with an appropriate

Contextual Info: DATA SHEET PHOTOCOUPLER PS2501-1,-4,PS2501L-1,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an

2501 PHOTOCOUPLER

Abstract: PS2501-4-A MJ031 PS2501-1 PS2501-1-A PS2501-4 PS2501L-1 PS2501L-1-F3 PS2501L-4 PS2501L-1-A
Contextual Info: PHOTOCOUPLER PS2501-1,-4,PS2501L-1,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

aa 118 diode

Abstract: 05nm5
Contextual Info: 2 / a y h + y j y a - K U 7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC6M Unit • mm Package I MTO-3P -, ^+0.5 lo-o.i 4>33±0-2 n-^bgÖT? #i| Date code 60V 60A • V aa%j Type No. » Polarity • T jl5 0 ° C • Prrsm 77 5.0 ±0-3

nxp power diode

Contextual Info: BYV25FX-600 Enhanced ultrafast power diode Rev. 01 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOD113 2-lead TO-220F plastic package. 1.2 Features and benefits „ High thermal cycling performance

schematic diagram of ip camera

Abstract: CSP marking code CM1230-02 CM1230-08CP CM1230-J2CP CM1230-02CP cm1-23024
Contextual Info: CM1230 2, 4, and 8-Channel Low-Capacitance ESD Protection Array Product Description The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in a CSP form factor. It is ideal for protecting systems with high data and clock rates or for circuits that

CM1230-08CP

Abstract: CM1230-02CP CM1230 CM1230-J2CP CM1230-04CP CSP-10 0240M cm123004
Contextual Info: 2, 4, and 8-Channel Low-Capacitance ESD Protection Array CM1230 Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in a CSP form factor. It is ideal for protecting systems with high data and clock rates or for circuits that

TLP620

Abstract: TLP620-2 TLP620-4
Contextual Info: TOSHIBA TLP620,TLP620-2,TLP620-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP620, TLP620-2, TLP620-4 PROGRAMMABLE CONTROLLERS A C /D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP620, -2 and -4 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V

Contextual Info: 2 /a v h + - K U 7 S W - I * y j y a Schottky Barrier Diode Twin Diode O U T LIN E D IM E N S IO N S S20SC9M Unit •mm Package I MTO-3P -, 4>33±02 ' 90V 20A ^+0.5 - 0. 1 1 5 .0 ±0-3 2.2± a5> \ Date code \ Type No. •T jl5 0 °C I7 • P rrsm • ffiiE

NEC 2532

Abstract: PS2532-2 pc 2532 nec PS2532 PS2532-1 PS2532-4 PS2532L-1 PS2532L-1-E3 PS2532L-2-E3 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES −NEPOC TM Series− DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode

CPH3205

Abstract: CPH5703 SB05-05CP
Contextual Info: Ordering number:ENN6092 TR : NPN Silicon Epitaxial Planar Transistor SBD : Schottky Barrier Diode CPH5703 DC/DC Converter Applications Package Dimensions unit:mm 2156 [CPH5703] 2.9 0.15 0.2 4 3 0.6 5 2.8 0.05 0.6 • Composite type with a NPN transistor and a Schottky

S30SC4M

Abstract: Schottky Diode s30sc4m 40v30a
Contextual Info: y j y 2 / a v h + a - K U 7 S W - I * Schottky Barrier Diode Twin Diode O U T LIN E D IM E N S IO N S S30SC4M Unit • mm Package I MTO-3P 4 > 33±0-2 40V 30A Date code Type No. i ti f l & t Polarity • T jl 5 0 ° C I7 •P rrsm • 5 .0 ±0-3 \i ffiiE