DIODE A 4 W Search Results

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown

dg1u

Abstract: TLP624
Contextual Info: TLP624,-2,-4 GaAs IRED a PHOTO-TRANSISTOR TLP6 24 PRO G RAM M ABLE CONTROLLERS AC /DC-INPUT M ODULE TELECOM M UNICATIO N The TOSHIBA TLP624, -2 and -4 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor. The TLP624-2 offers two isolated channels in an eight lead plastic

1SV304

Contextual Info: T O SH IB A 1SV304 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V3 0 4 VCO FOR VHF BAND RADIO U nit in mm • Sm all Package • High Capacitance Ratio : C i v / C 4 v = 3.0 Typ. • Low Series Resistance : rs = 0 .2 7 0 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

ic 4PC

Abstract: 115b1
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP320,-2,-4 TENTATIVE DATA T L P 3 2 0 U nit in mm T E L E C O M M U N IC A T IO N TLP320 OFFICE M A C H IN E ~ A T ELEP H O N E USE E Q U IP M E N T 3 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.

TIL186

Contextual Info: TILI 86-1, TILI 86-2, TIL186-3, TIL186 4 AC INPUT OPTOCOUPLERS 0 2 9 8 1 , DECEMBER 1 9 8 6 -R E V IS E D JUNE 198 9 • A-C Signal Input • Choice of Four Current Transfer Ratios • Gallium Arsenide Dual-Diode Infrared Sources Coupled to a Silicon NPN Photo-Transistor

PIN Photodiode side look

Abstract: TOLD9442M
Contextual Info: T O SH IB A TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection LD Ô 6 ! PD 2 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

FB15R06KL4

Abstract: eupec fb15r06kl4 NTC 5e 842e3
Contextual Info: Technische Information / Technical Information FB15R06KL4 IGBT-Module IGBT-Modules Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

brake rectifier motor

Abstract: vub 70 diode B25 VUB72 dc chopper circuit DIODE RECTIFIER BRIDGE SINGLE E72873 B25 diode Three Phase Rectifier Bridge with Brake IGBT vub 70 -16
Contextual Info: VUB 72 VRRM = 1200/1600 V IdAVM = 110 A Three Phase Rectifier Bridge with Brake Chopper 1 2 D1 D3 D5 D2 D4 D6 NTC 4 5 D T 6 7 Features Input Rectifier D1 - D6 Symbol Conditions VRRM VUB 72 -12 NO1 VUB 72 -16 NO1 Maximum Ratings IFAV IDAVM IFSM 1200 1600 V

diode k1

Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 600 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current

2x61

Abstract: IXYS DSEI 2X61 6112P
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

250/TRANSISTOR 132-gd

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode IFAV = 9 A VRRM = 600 V trr = 15 ns with soft recovery Electrically Isolated Back Surface VRSM VRRM V V Type A C ISOPLUS 247TM C A Isolated back surface * 600 600 DSEP 9-06CR A = Anode, C = Cathode * Patent pending

IRG4PC50UDPBF

Abstract: DIODE RECTIFIER BRIDGE SINGLE 55a 600v IRG4PC50 035H IRFPE30 5A1000 irg4pc
Contextual Info: PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

FF600R12KL4C

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FF 600 R 12 KL4C Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

APT8020JLL

Abstract: APT30DF100
Contextual Info: APT8020JLL 800V POWER MOS 7 R 33A 0.200Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

eupec igbt

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 200 R 65 KF1-K Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

center tapped transformer

Contextual Info: m b U NITRODE Design Note Inductorless Bias Supply Design for Synchronous Rectification and High Side Drive Applications by Bill Andreycak Developing a bias supply which is higher than a power supply’s input voltage is usually required in high side switch applications. Two such exam­

GS 069 pwm

Abstract: fan5018 AN-6003 FAN5009 FAN5009M FAN5009MP FAN5019 FDD6696 VR10
Contextual Info: www.fairchildsemi.com FAN5009 Dual Bootstrapped 12V MOSFET Driver Features General Description • Drives N-channel High-Side and Low-Side MOSFETs in a synchronous buck configuration • 12V High-Side and 12V Low-Side Drive • Internal Adaptive “Shoot-Through” Protection

ODD-45W

Abstract: OD-148-C OD-148W OD-24F OD-880 OD-880E OD-880F OD-880F1 OD-880L OD-880W
Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output

T500mA

Contextual Info: TD62107F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62107F DARLINGTON DRIVER WITH ENABLE_ The T D 6 2 1 0 7 F is c omprised of four NPN d a rlington output stages and enable inputs w h i c h can gate the outputs. All o u t p u t s feature integral c lamp diodes for s w i t c h ­

DVD laser head

Abstract: 17323 DVD RW circuit diagram EL6290C EL6290CJ EL6290CL EL6290CU
Contextual Info: Laser Diode Driver with Waveform Generator Features General Description • Complete programmable laser diode driver • 250mA maximum output • 8bit x 8bit multiplying DAC output provides 8bit full scale adjustment and 8bit resolution at any full scale output

30-06A

Abstract: 3006A 3006aa 20/30-06A IXYS 30-06A
Contextual Info: DSEC 30-06A HiPerFREDTM Epitaxial Diode IFAV = 2x 15 A VRRM = 600 V trr = 35 ns with common cathode and soft recovery VRSM VRRM V V 600 600 TO-247 AD Type DSEC 30-06A A C A C A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings

Contextual Info: BZD27C Series 1 W Surface Mount Zener Diode Current 1W Voltage 11 to 220 V DO-219AA M1F FEATURES • Low profile package • Ideal for automated placement • Low leakage current • High surge current and zener capability • Low differential resistance

10 gb laser diode

Contextual Info: 10Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TX-SXCMI -01 Features • Uncooled DFB Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for