DIODE 9C Search Results

Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A

RJS6005TDPP-EJ

Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A

Contextual Info: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are

pin out diagram of 74138 ic

Abstract: pin configuration of IC 74138 circuit diagram body thermistor 280542
Contextual Info: 19-3476; Rev 2; 9/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the

zener 6c2

Abstract: sot-23 Marking 8C2 6c2 diode 5B1 zener diode sot-23 Diode SOT-23 marking 27C 5c1 zener diode SOT23 MARKING 5b1 27BSB 5B1 IR BZX84C
Contextual Info: BZX84C-BS SERIES 4.7V to 36V SILICON PLANAR VOLTAGE REGULATOR DIODE FEATURES * Zener Voltage Range 4.7 to 36 Volts * SOT-23 Package * Low Voltage General Purpose Voltage Regulator Diode SOT-23 MECHANICAL DATA * * * * * .052 1.325 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

Contextual Info: Preliminary Datasheet RJU60C6SDPK-M0 Single Diode Fast Recovery Diode R07DS0378EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = −100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 50 A)

RJU6052SDPD-E0

Contextual Info: Preliminary Datasheet RJU6052SDPD Single Diode Ultra Fast Recovery Diode R07DS0379EJ0100 Rev.1.00 Apr 26, 2011 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 10 A, di/dt = −100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A)

RJU6054SDPE

Contextual Info: Preliminary Datasheet RJU6054SDPE Single Diode Ultra Fast Recovery Diode R07DS0384EJ0100 Rev.1.00 Apr 26, 2010 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 30 A, di/dt = 100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 30 A)

Contextual Info: Preliminary Datasheet RJU60C3TDPP-EJ Single Diode Fast Recovery Diode R07DS0376EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 90 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 30 A)

Contextual Info: Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1371-0310 High Speed Power Switching Rev.3.10 May 13, 2010 Features •    Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode

Contextual Info: Preliminary Datasheet RJU36B2WDPF 360V - 40A - Dual Diode Ultra Fast Recovery Diode R07DS1136EJ0300 Rev.3.00 Dec 06, 2013 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)

Contextual Info: Preliminary Datasheet RJU6052TDPP-EJ Single Diode Ultra Fast Recovery Diode R07DS0381EJ0100 Rev.1.00 Apr 26, 2011 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 10 A, di/dt = −100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A)

Contextual Info: Preliminary Datasheet RJU36B2WDPK-M0 Dual Diode Ultra Fast Recovery Diode R07DS0668EJ0100 Rev.1.00 Mar 01, 2012 Features • Ultra fast reverse recovery time: trr = 40 ns typ. at IF = 20 A, di/dt = 100 A/s  Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)

RJU4351SDPE

Contextual Info: Preliminary Datasheet RJU4351SDPE 430V - 10A - Single Diode Ultra Fast Recovery Diode R07DS1063EJ0200 Rev.2.00 Apr 26, 2013 Features • Ultra fast reverse recovery time: trr = 23 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.6 V typ. (at IF = 10 A)

Contextual Info: Preliminary Datasheet RJU60C6WDPK-M0 600V - 50A - Dual Diode Super Fast Recovery Diode R07DS0875EJ0100 Rev.1.00 Sep 03, 2012 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = 100 A/s Per Leg  Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg

Contextual Info: Preliminary Datasheet RJU60C2SDPD Single Diode Fast Recovery Diode R07DS0373EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 70 ns typ. at IF = 5 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 15 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

Contextual Info: Preliminary Datasheet RJU60C2TDPP-EJ Single Diode Fast Recovery Diode R07DS0374EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 70 ns typ. at IF = 5 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 15 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)

Contextual Info: Series 50-170 A m p * DIODE* 9CRDIODE Modules High Thermal Efficiency These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Twelve standard models provide 2500 Vrms

Contextual Info: Schottky Barrier Diode Twin Diode W tm SF5SC4 OUTLINE fk 40V Feature • Tj=150°C • Tj= 150°C • PR RSM T ’A ' i ^ V Î ' I ' K i E • • 71 [ Æ -J U K • Full M o ld e d • I Ê S I f f i2 k V « | I • D ie le ctric S tren g th 2 k V Rating

3un6

Contextual Info: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat

5am8

Abstract: 6AM8A 6CB6 6AL5 pentode 6AM8 combined video
Contextual Info: SYLVANIA TYPE T6± 6AM 8 6AM8A 5AM8 w DIODE PENTODE MECHANICAL DATA B u lb .T-6 Vi, O utline 6-2 B utto n 9-Pin

G7 diode

Abstract: DIODE G7
Contextual Info: SK 45 UT power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMITOP 3 Antiparallel Thyristor Module SK 45 UT Preliminary Data

6v4 tube

Abstract: diode wss 3710mA 12BR7 Scans-0017272
Contextual Info: A T6* S Y LV A N IA TYPE 12BR7 DUO DIODE TRIODE w MECHANICAL DATA B u lb . T-6V4 Base. E9-1, Sm all B u tto n 9-Pin O u tlin e .

4a3 zener diode

Abstract: 2A0 zener diode
Contextual Info: Preliminary Datasheet HZU Series R07DS0423EJ1000 Rev.10.00 Jun 06, 2011 Silicon Planar Zener Diode for Stabilizer Features • These diodes are delivered taped.  Ultra small Resin Package URP is suitable for surface mount design. Ordering Information