DIODE 931 P 7 Search Results

facon diode

Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
Contextual Info: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg

cb 237

Abstract: 1001dl 741 AMP DB39-931 in 741 DIODE CB-237 CB200 DH741931 ci 741 a 741 j
Contextual Info: « pack 931» diode/thyristor 12 Amp m o d u les d io d e/th y risto r « p a c k 931 »12 A m p V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn O V RRM I r p e r leg @ p a r bras VR >GT RGK - 1 k n 125 °C V (A) (m A) (UA) (m A ) 50 100 200

Fairchild 9317

Abstract: 7 segment decoder 9317 9317 decoder 7 segment decoder TTL 9317 9317B ttl 9317 9317C 9317CDM TTL family
Contextual Info: TTL/MSI 9317B • 9317C 7-SEGMENT DECODER/DRIVERS FO R A D D IT IO N A L IN F O R M A T IO N SEE T H E F A IR C H IL D T T L D A T A BOOK. D E S C R IP T IO N — The 9 3 1 7 is a T T L /M S I Seven Segment D ecoder/Driver designed to accept four inputs in 8421 BCD code and provide the appropriate outputs to drive a seven segment numerical

facon bf 39933

Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
Contextual Info: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom ­ mended max id on re­ sistive load

PS2801C-4

Abstract: ps2801c-1 f4 1c
Contextual Info: DATA SHEET PHOTOCOUPLER PS2801C-1,PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801C-1 and PS2801C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.

Contextual Info: HAT3008R Silicon N-Channel / P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-536B 3rd. Edition Features • Low on-resistance • Capable o f 4 V gate drive • Low drive current • High density mounting Outline S O P -8 7 8 D D 5 6 D D

PS2801C-4

Abstract: PS2801C-1 ps2801C 9311c PS2801C-1-F3-A
Contextual Info: DATA SHEET PHOTOCOUPLER PS2801C-1,PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801C-1 and PS2801C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.

EUPEC T 691 S 30 thyristor

Abstract: T 308 THYRISTOR EUPEC T 1078 F T 468 THYRISTOR EUPEC Thyristor h 198 s Thyristor PIN CONFIGURATION T 481 thyristor EUPEC Thyristor asymmetric thyristor T675S
Contextual Info: . power the Home Products F-Thyristors News Contact Editorials Fast Thyristors V DRM,RRM max. 800 V T 72 F T 102 F . . T 178 F T 308 F T 698 F T 1078 F . Job Offers Company Search Site Content Fast Asymm. Thyristors the figures in the part-no. represent the current rating [A]

diode 931 p 7

Abstract: A198S
Contextual Info: 4 ^ • EUPEC Fast asymmetric thyristors Type V drm V dsm / ¡ 2dt V rrm = VDRM V blE D ■ 34035^7 □□□1330 TT7 ■ UPEC di/dt cr V(TO) V) (dv/dt)cr O utline ( V r r m ( c j) tp = 10 ms, 10 ms, 1 |XS tv i max tv , max sin. V kA A2s A/°C tvj = »vi =

PS2801C-1-A

Abstract: PS2801C-1-F3-A nL931 EN60747-5-2 PS2801C-1 PS2801C-4 VDE0884 PS2801C-4-F3-A ps2801C
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nfr 25m

Abstract: PC100F2 diode 931 p 7 BB351 ITT DIODE 210
Contextual Info: FAST RECOVERY DIODE MODULE 100A/200V/trr:90nsec PC100F2 FEATURES O Iso la te d B ase o D ual D iodes - C athode Com m on :PC100F2 20 0791 & O S uper F a st R ecovery o H igh S urge C apability -4 4 (1 7 3 . i . ,0';95 |. 8 2(323» -« 1 41.5(1.63)

EUPEC DIODE

Abstract: A198S
Contextual Info: EUPEC blE » • 3HD3ET7 □□□133D TT7 ■LIPEC dv/dt cr Vgt Igt RthJC DIN DIN tvj = tv) = 180 °el I EC 747-6 I EC 747-6 25 °C 25 “C sinus F a s t a s y m m e tr ic th y ris to rs Type A 198 S A 358 S "f-.'j max 10 ms, t j| max sin. ‘vi = tvi =

BUZ73

Abstract: SD2822 7a2 diode diode 935 lg LG 932
Contextual Info: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3

mp42

Contextual Info: MP4201 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-7T-MOSm 4 IN 1 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 2 5.2 ± 0 .2 LOAD SWITCHING. • 4-Volt Gate D rive Available

d1n914

Abstract: 1N916 1N914 diode 1N916
Contextual Info: • bbSBS31 DDEbâ^l 7 N AUER P H I L I P S / D I S C R E T E bD ■APX t iT E 1N914 1N916 ]> HIGH-SPEED SILICON DIODES Planar epitaxial diodes intended fo r general purpose applications. Q UICK REFERENCE D A T A Continuous reverse voltage Vr Repetitive peak reverse voltage

931 Diode

Abstract: diode 931 p 7
Contextual Info: USR 931 thru USR 934 Microlsemi Corp. j SANTA ANA. CA j / / T h e d io d e e xp e rts SANTA ANA, CA SCOTTSDALE, A Z F o r more information call: <602 941-6300 DESCRIPTION This series of Microsemi 400mW U ltra-Stable Reference Diodes offers a C E R T IFIE D R E FE R E N C E VOLTAGE STABILITY as measured over

931 Diode

Abstract: HR168 USR931 USR932 USR933 USR934 USR Semiconductor diode identification 932 diode
Contextual Info: / U SR 931 / thru Micro/semiCorp. USR 9 3 4 j The diode experts SANTA ANA, CA SANTA ANA, CA / SCOTTSDALE, AZ For more information call: / 602 941-6300 D E S C R IP T IO N This series of Microsemi 400mW Ultra-Stable Reference Diodes offers a CERTIFIED REFEREN CE VOLTAGE STABILITY as measured over

IHW20N120R3

Abstract: J127 9127 diode
Contextual Info: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

IHW20N120R3

Abstract: j127 H63-1 9P127 E393 h631 wg 2 fk
Contextual Info: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

Contextual Info: 10:37 Seite 111 Information 27.05.2011 132 VARIODRIVE Compact Motor brake and sensor VarioDrive C 120 ECI motor BCI gearmotors BG motor 114 BCI motor BCI basic motors AC motors 112 Specifications BCI motors technical information VARIODRIVE The BCI motor family

temperature compensated zener diode "high voltage"

Contextual Info: U SR 931 th ru USR 9 3 4 / Microsemi Corp. 9 The cboöe experts SANTA A N A , CA / SANTA ANA. CA / / SC O TTSD A LE, A Z F o r mote information call: 602 941-6300 D E S C R IP T IO N This series of Microsemi 400mW U ltra-Stable Reference Diodes offers a

C 3883

Abstract: D1049N D428N D4401N D660N D798N 1439 diode 16-04 thyristor
Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

932 diode

Abstract: 931 Diode zener diode numbering system 107 diode H 48 zener diode USR932 USR931 USR933 USR934 USR Semiconductor
Contextual Info: USR 931 thru USR 934 / Micro/semi Corp. ^ The diode experts SANTA AN A. CA NTA ANA> A N A, CA CA j *SA ANIA ^COTT^DA f F AZ A7 SCOTTSDALE, For more information call: 602 941-6300 D E S C R IP T IO N This series of Microsemi 400mW U ltra-S table Reference Diodes offers a

diode rj 93

Abstract: IHD06N60RA B127 9C13 Z8B00003328 bk 36
Contextual Info: IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution