DIODE 931 P 7 Search Results

facon diode

Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
Contextual Info: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg

Fairchild 9317

Abstract: 7 segment decoder 9317 9317 decoder 7 segment decoder TTL 9317 9317B ttl 9317 9317C 9317CDM TTL family
Contextual Info: TTL/MSI 9317B • 9317C 7-SEGMENT DECODER/DRIVERS FO R A D D IT IO N A L IN F O R M A T IO N SEE T H E F A IR C H IL D T T L D A T A BOOK. D E S C R IP T IO N — The 9 3 1 7 is a T T L /M S I Seven Segment D ecoder/Driver designed to accept four inputs in 8421 BCD code and provide the appropriate outputs to drive a seven segment numerical

facon bf 39933

Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
Contextual Info: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom ­ mended max id on re­ sistive load

PS2801C-4

Abstract: ps2801c-1 f4 1c
Contextual Info: DATA SHEET PHOTOCOUPLER PS2801C-1,PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801C-1 and PS2801C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.

PS2801C-4

Abstract: PS2801C-1 ps2801C 9311c PS2801C-1-F3-A
Contextual Info: DATA SHEET PHOTOCOUPLER PS2801C-1,PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801C-1 and PS2801C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.

EUPEC DIODE

Abstract: A198S
Contextual Info: EUPEC blE » • 3HD3ET7 □□□133D TT7 ■LIPEC dv/dt cr Vgt Igt RthJC DIN DIN tvj = tv) = 180 °el I EC 747-6 I EC 747-6 25 °C 25 “C sinus F a s t a s y m m e tr ic th y ris to rs Type A 198 S A 358 S "f-.'j max 10 ms, t j| max sin. ‘vi = tvi =

mp42

Contextual Info: MP4201 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-7T-MOSm 4 IN 1 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 2 5.2 ± 0 .2 LOAD SWITCHING. • 4-Volt Gate D rive Available

Motors

Contextual Info: BCI-Motors BCI motor – the complete drive solution with a design made to order Technical Information Apart from providing exceptional value for money, the mechanically commutated internal rotor BCI In brief and straight to the point motors provide everything expected in a genuine ebm-papst motor:

Contextual Info:  RTU500 series Data Sheet Modem 560FSM11 subrack mounting and can be used as a standalone unit. Modem 560FSM11 Characteristics The 560FSM11 is designed for snap-in DIN-rail mounting. All necessary configuration like twoor four-wire operation, receiver sensitivity, line

B2HKF

Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Contextual Info: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °

GaAs 1000 nm Infrared Diode,

Abstract: SE1450-002L se1450-003l
Contextual Info: SE1450 GaAs Infrared Emitting Diode FEA TU R ES • Compact, metal can coaxial package • 24° nominal beam angle • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SD 1420 photodiode, SD 1440 phototransistor and SD1410

Contextual Info: T T ET SS ? 0 0 M b 3S 7 23b « S G T H STP18N1 o STP18N1OFI SGS-THOMSON ¡[LJOT «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR . • ■ . . ■ ■ ■ 100 V 100 V R d S oii D D V dss STP18N 10 STP18N 10FI A A O O TYPE Ip 18 A 11 A TYPICAL Ros(on) = 0.095 LI

Contextual Info: P-CHANNEL POWER MOSFETS SSD2106 FEATURES • Lower R ds <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate ceil structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE E5E D ^^53= 131 aaaa343 a • B Y 359 SERIES 7 = <93-1 7 FAST HIGH-VOLTAGE RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in TO-220 plastic envelopes, featuring fast recovery times. They are intended for use as an anti-parallel diode to GTOs and similar high-voltage switches,

irfp054

Abstract: diode ior 0014 CD 1517
Contextual Info: International S Rectifier PD-9.544A IRFP054 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 6 0 V ^DS on = 0 .0 1 4 Q

985-117

Abstract: PD 1515 2322 644 D1029N D2209N D660N D748N
Contextual Info: M6 - Schaltung ~ Anschlußspannung ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 460 V 2200 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C]

D1049N

Abstract: D428N D660N D798N
Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

usr932

Abstract: USR rms zener Diode But USR Semiconductor diode 934
Contextual Info: USR 9 3 1 thriu USR 9 3 4 Microsemi Corp. D ESC R IPTIO N : Microsemi is now offering a com plete series of ultra-stable, certified, 9.3 Volt reference diodes w ith long-term stabilities as low' as 5 PPM /1000 hours. These diodes are built using the ultra-reliable and stable TO P* therm al-oxidepassivation process.

A 933 S transistors

Abstract: p06e
Contextual Info: V P 06E ßi S u p ertex inc . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / Order Number / Package b v dgs R dS(ON (max) ' d(ON) (min) TO-39 TO-92 TO-220 DICEt -450V 3on -0.2A VP0645N2 VP0645N3 VP0645N5

snubber FOR 3PHASE BRIDGE RECTIFIER

Abstract: EUPEC Thyristor gct thyristor 74x26mm eupec igbt BSM 100 gb FAST HIGH VOLTAGE DIODE 4000 V EUPEC D1201 D1201 D170S eupec phase control thyristor
Contextual Info: . power the Home Products F-Diode News Contact Editorials GTO Diodes . V RRM = 2500 V 2500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 4500 V 6000 V 6000 V Company Search Site Content Fast Rectifier Diodes Freewh. Diodes for GCT & IGBT GTO Snubberdiodes part-no.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

1RFP054

Abstract: 15-17-In MAX7064
Contextual Info: OOlSMMfl G14 • INR International ic?R Rectifier PD.9544A 1RFP054 INTERNATIONAL RECTIFIER HEXFET Power M O SFET Dynamic dv/dt Rating Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

T1078N

Abstract: T1258N T348N T398N T828N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V + - Kühlblöcke für verstärkte Luftkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock

A 933 S transistors

Abstract: VP0645N5 VP0650N2 VP06E
Contextual Info: VP 06E LJ S u p ertex inc. ✓jpv P-Channel Enhancement-Mode M B/ Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package BV dss / ^DS O N) *D|ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE* -450V 3on -0.2A VP0645N2 VP0645N3