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    DIODE 931 P 7 Search Results

    DIODE 931 P 7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 931 P 7 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    facon diode

    Abstract: 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl
    Contextual Info: FACON 4SE D • 345b2G3 □□□□□IE 4 HIFCN FACON SEMICONDUCTEURS/SEMICONDUCTORS T-Z3-OI « pack 931» diode/thyristor 12 Amp modules diode/thyristor « pack 931 »12 Amp V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn n V RRM I r p e r leg


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    345b2D3 T-23-0\ cb-200 741j37 cb-236 facon diode 40931 thyristor N 600 ch 14 CA 40931 ci 741 facon 741J 741 AMP 37741 1001dl PDF

    cb 237

    Abstract: 1001dl 741 AMP DB39-931 in 741 DIODE CB-237 CB200 DH741931 ci 741 a 741 j
    Contextual Info: « pack 931» diode/thyristor 12 Amp m o d u les d io d e/th y risto r « p a c k 931 »12 A m p V DRM or T y p es •f s m / •t s m 10 ms U se C ase ro cn O V RRM I r p e r leg @ p a r bras VR >GT RGK - 1 k n 125 °C V (A) (m A) (UA) (m A ) 50 100 200


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    CB-200 741J37 CB-236 CB-200 CB-237 CB-335 CB-361 cb 237 1001dl 741 AMP DB39-931 in 741 DIODE CB-237 CB200 DH741931 ci 741 a 741 j PDF

    Fairchild 9317

    Abstract: 7 segment decoder 9317 9317 decoder 7 segment decoder TTL 9317 9317B ttl 9317 9317C 9317CDM TTL family
    Contextual Info: TTL/MSI 9317B 9317C 7-SEGMENT DECODER/DRIVERS FO R A D D IT IO N A L IN F O R M A T IO N SEE T H E F A IR C H IL D T T L D A T A BOOK. D E S C R IP T IO N — The 9 3 1 7 is a T T L /M S I Seven Segment D ecoder/Driver designed to accept four inputs in 8421 BCD code and provide the appropriate outputs to drive a seven segment numerical


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    9317B 9317C 9317B 16-LEAD 93T7BDM 9317C 9317CDM Fairchild 9317 7 segment decoder 9317 9317 decoder 7 segment decoder TTL 9317 ttl 9317 9317CDM TTL family PDF

    facon bf 39933

    Abstract: facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931
    Contextual Info: FACON 4SE D • 3M5b203 □□□□□Ob S FACON SEMICONDUCTEURS/SEMtCONDUCTORS ■ FCN ~T~2 3 ' 0 { single phase moulded bridges 0,8 Amp to 1,5 Amp ponts monophasés moulés 0,8 Amp à 1,5 Amp V RRM Typ es V r MS recom ­ mended max id on re­ sistive load


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    3M5b203 FBD08 FBH08 CB-198 CB-237 facon bf 39933 facon BA 204 115 Facon Bb 37 933 facon bh 39933 BD 39-931 Facon BH 37 933 bd 39933 FBH15 facon bd 39933 Facon bh 36931 PDF

    PS2801C-4

    Abstract: ps2801c-1 f4 1c
    Contextual Info: DATA SHEET PHOTOCOUPLER PS2801C-1,PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801C-1 and PS2801C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.


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    PS2801C-1 PS2801C-4 PS2801C-4 16-pin PS2801C-1-F3, PS2801C-4-F3, E72422 EN60747-5-2 VDE0884 f4 1c PDF

    Contextual Info: HAT3008R Silicon N-Channel / P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-536B 3rd. Edition Features • Low on-resistance • Capable o f 4 V gate drive • Low drive current • High density mounting Outline S O P -8 7 8 D D 5 6 D D


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    HAT3008R ADE-208-536B PDF

    PS2801C-4

    Abstract: PS2801C-1 ps2801C 9311c PS2801C-1-F3-A
    Contextual Info: DATA SHEET PHOTOCOUPLER PS2801C-1,PS2801C-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER −NEPOC Series− DESCRIPTION The PS2801C-1 and PS2801C-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SSOP for high density applications to realize an excellent cost performance.


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    PS2801C-1 PS2801C-4 PS2801C-4 16-pin PS2801C-1-F3, PS2801C-4-F3, E72422 EN60747-5-2 VDE0884 ps2801C 9311c PS2801C-1-F3-A PDF

    EUPEC T 691 S 30 thyristor

    Abstract: T 308 THYRISTOR EUPEC T 1078 F T 468 THYRISTOR EUPEC Thyristor h 198 s Thyristor PIN CONFIGURATION T 481 thyristor EUPEC Thyristor asymmetric thyristor T675S
    Contextual Info: . power the Home Products F-Thyristors News Contact Editorials Fast Thyristors V DRM,RRM max. 800 V T 72 F T 102 F . . T 178 F T 308 F T 698 F T 1078 F . Job Offers Company Search Site Content Fast Asymm. Thyristors the figures in the part-no. represent the current rating [A]


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    diode 931 p 7

    Abstract: A198S
    Contextual Info: 4 ^ • EUPEC Fast asymmetric thyristors Type V drm V dsm / ¡ 2dt V rrm = VDRM V blE D ■ 34035^7 □□□1330 TT7 ■ UPEC di/dt cr V(TO) V) (dv/dt)cr O utline ( V r r m ( c j) tp = 10 ms, 10 ms, 1 |XS tv i max tv , max sin. V kA A2s A/°C tvj = »vi =


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    314D3ET7 diode 931 p 7 A198S PDF

    PS2801C-1-A

    Abstract: PS2801C-1-F3-A nL931 EN60747-5-2 PS2801C-1 PS2801C-4 VDE0884 PS2801C-4-F3-A ps2801C
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    nfr 25m

    Abstract: PC100F2 diode 931 p 7 BB351 ITT DIODE 210
    Contextual Info: FAST RECOVERY DIODE MODULE 100A/200V/trr:90nsec PC100F2 FEATURES O Iso la te d B ase o D ual D iodes - C athode Com m on :PC100F2 20 0791 & O S uper F a st R ecovery o H igh S urge C apability -4 4 (1 7 3 . i . ,0';95 |. 8 2(323» -« 1 41.5(1.63)


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    00A/200V/trr 90nsec PC100F2 PC100F2 PC100F bbl5123 nfr 25m diode 931 p 7 BB351 ITT DIODE 210 PDF

    EUPEC DIODE

    Abstract: A198S
    Contextual Info: EUPEC blE » • 3HD3ET7 □□□133D TT7 ■LIPEC dv/dt cr Vgt Igt RthJC DIN DIN tvj = tv) = 180 °el I EC 747-6 I EC 747-6 25 °C 25 “C sinus F a s t a s y m m e tr ic th y ris to rs Type A 198 S A 358 S "f-.'j max 10 ms, t j| max sin. ‘vi = tvi =


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    PDF

    BUZ73

    Abstract: SD2822 7a2 diode diode 935 lg LG 932
    Contextual Info: SIEMENS BUZ 73 BUZ 73 A SIPMOS Power MOS Transistors VDS = 200 V /q = 7 .0 /5 .5 A ^os on ~ 0 .4 /0 .6 Q • N channel • Enhancem ent mode • A valanche-proof • Package: TO -220 A B 1) TVpe Ordering code BUZ 73 C 6 7 0 7 8 -S 1 31 7-A2 BUZ 7 3 A C 6 70 78-S 1 31 7-A 3


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    15tfic BUZ73 SD2822 7a2 diode diode 935 lg LG 932 PDF

    mp42

    Contextual Info: MP4201 POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-7T-MOSm 4 IN 1 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 2 5.2 ± 0 .2 LOAD SWITCHING. • 4-Volt Gate D rive Available


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    MP4201 100/JA mp42 PDF

    d1n914

    Abstract: 1N916 1N914 diode 1N916
    Contextual Info: • bbSBS31 DDEbâ^l 7 N AUER P H I L I P S / D I S C R E T E bD ■APX t iT E 1N914 1N916 ]> HIGH-SPEED SILICON DIODES Planar epitaxial diodes intended fo r general purpose applications. Q UICK REFERENCE D A T A Continuous reverse voltage Vr Repetitive peak reverse voltage


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    bbSBS31 1N914 1N916 OD-27 DO-35) 1N914: 1N916: 1N914 d1n914 1N916 diode 1N916 PDF

    931 Diode

    Abstract: diode 931 p 7
    Contextual Info: USR 931 thru USR 934 Microlsemi Corp. j SANTA ANA. CA j / / T h e d io d e e xp e rts SANTA ANA, CA SCOTTSDALE, A Z F o r more information call: <602 941-6300 DESCRIPTION This series of Microsemi 400mW U ltra-Stable Reference Diodes offers a C E R T IFIE D R E FE R E N C E VOLTAGE STABILITY as measured over


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    400mW PPM/1000 931 Diode diode 931 p 7 PDF

    931 Diode

    Abstract: HR168 USR931 USR932 USR933 USR934 USR Semiconductor diode identification 932 diode
    Contextual Info: / U SR 931 / thru Micro/semiCorp. USR 9 3 4 j The diode experts SANTA ANA, CA SANTA ANA, CA / SCOTTSDALE, AZ For more information call: / 602 941-6300 D E S C R IP T IO N This series of Microsemi 400mW Ultra-Stable Reference Diodes offers a CERTIFIED REFEREN CE VOLTAGE STABILITY as measured over


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    USR931 400mW PPM/1000 931 Diode HR168 USR931 USR932 USR933 USR934 USR Semiconductor diode identification 932 diode PDF

    IHW20N120R3

    Abstract: J127 9127 diode
    Contextual Info: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution


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    IHW20N120R3 J-STD-020 JESD-022 IHW20N120R3 J127 9127 diode PDF

    IHW20N120R3

    Abstract: j127 H63-1 9P127 E393 h631 wg 2 fk
    Contextual Info: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution


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    IHW20N120R3 J-STD-020 JESD-022 IHW20N120R3 j127 H63-1 9P127 E393 h631 wg 2 fk PDF

    Contextual Info: 10:37 Seite 111 Information 27.05.2011 132 VARIODRIVE Compact Motor brake and sensor VarioDrive C 120 ECI motor BCI gearmotors BG motor 114 BCI motor BCI basic motors AC motors 112 Specifications BCI motors technical information VARIODRIVE The BCI motor family


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    temperature compensated zener diode "high voltage"

    Contextual Info: U SR 931 th ru USR 9 3 4 / Microsemi Corp. 9 The cboöe experts SANTA A N A , CA / SANTA ANA. CA / / SC O TTSD A LE, A Z F o r mote information call: 602 941-6300 D E S C R IP T IO N This series of Microsemi 400mW U ltra-Stable Reference Diodes offers a


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    400mW PPM/1000 temperature compensated zener diode "high voltage" PDF

    C 3883

    Abstract: D1049N D428N D4401N D660N D798N 1439 diode 16-04 thyristor
    Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 400 Veff 500 Veff 550 Veff 270 V 1400 V 335 V 1600 V 370 V 1800 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    D428N D660N D798N D1049N 174KK34 C 3883 D1049N D428N D4401N D660N D798N 1439 diode 16-04 thyristor PDF

    932 diode

    Abstract: 931 Diode zener diode numbering system 107 diode H 48 zener diode USR932 USR931 USR933 USR934 USR Semiconductor
    Contextual Info: USR 931 thru USR 934 / Micro/semi Corp. ^ The diode experts SANTA AN A. CA NTA ANA> A N A, CA CA j *SA ANIA ^COTT^DA f F AZ A7 SCOTTSDALE, For more information call: 602 941-6300 D E S C R IP T IO N This series of Microsemi 400mW U ltra-S table Reference Diodes offers a


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    USR931 400mW PPM/1000 932 diode 931 Diode zener diode numbering system 107 diode H 48 zener diode USR932 USR931 USR933 USR934 USR Semiconductor PDF

    diode rj 93

    Abstract: IHD06N60RA B127 9C13 Z8B00003328 bk 36
    Contextual Info: IHD06N60RA Soft Switching Series Reverse conducting IGBT with monolithic body diode C • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution


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    IHD06N60RA diode rj 93 IHD06N60RA B127 9C13 Z8B00003328 bk 36 PDF