DIODE 907 Search Results

Contextual Info: BAY135 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage FEATURES • Silicon planar diode • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS

Contextual Info: BAY135 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage FEATURES • Silicon planar diode • Very low reverse current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS

BAY135

Contextual Info: BAY135 Vishay Telefunken Switching Diode Features D Silicon Planar Diode D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Order Instruction Type BAY135 Type Differentiation VRRM = 140 V Ordering Code BAY135–TAP Remarks

BAY135

Contextual Info: BAY135 Vishay Semiconductors Switching Diode Features D Silicon Planar Diode D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Order Instruction Type BAY135 Type Differentiation VRRM = 140 V Ordering Code BAY135–TAP Remarks

BAY135

Abstract: bay13 CD1405
Contextual Info: BAY135 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Planar Diode • Very low reverse current Applications Protection circuits, delay circuits Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options:

Contextual Info: BAY135 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Planar Diode • Very low reverse current Applications Protection circuits, delay circuits Mechanical Data 94 9367 Case: DO-35 Glass Case Weight: approx. 130 mg Packaging Codes/Options:

DS2103SY

Abstract: DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
Contextual Info: DS2103SY DS2103SY Rectifier Diode Replaces October 2001 version, DS4172-5.0 DS4172-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification ■ Freewheel Diode

AN4839

Abstract: DS2103SY DS2103SY21 DS2103SY22 DS2103SY23 DS2103SY24 DS2103SY25 DS2103SY26
Contextual Info: DS2103SY DS2103SY Rectifier Diode Replaces October 2001 version, DS4172-5.0 DS4172-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 2600V ■ High Surge Capability IF AV 5788A IFSM APPLICATIONS 81000A ■ Rectification ■ Freewheel Diode

Contextual Info: NTP35N15 Preferred Device Power MOSFET 37 Amps, 150 Volts N−Channel TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Contextual Info: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Planar Diode • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Planar Diode • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

d918

Abstract: D938 TND903 TND907
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

Contextual Info: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Planar Diode • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

Contextual Info: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • Silicon Planar Diode • Very low reverse current • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21

BAY135

Abstract: BAY135-TAP BAY135-TR DO35 BAY13
Contextual Info: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • Silicon Planar Diode Very low reverse current e2 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications 94 9367 • Protection circuits, delay circuits

BAY135

Abstract: BAY135-TAP BAY135-TR BAY13
Contextual Info: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • Silicon Planar Diode Very low reverse current Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications 94 9367 • Protection circuits, delay circuits

ND921

Abstract: br 903
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

Contextual Info: BAY135 Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • Silicon Planar Diode Very low reverse current e2 Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications 94 9367 • Protection circuits, delay circuits

VEC2801

Abstract: marking BL
Contextual Info: VEC2801 Ordering number : EN9078 SANYO Semiconductors DATA SHEET VEC2801 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features The best suited for DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

thyristor ABB

Abstract: ABB thyristor 5 0584E Abb F 374
Contextual Info: 5STR 04T2032 5STR 04T2032 Old part no. TP 907FC-370-20 Reverse Conducting Thyristor Properties Integrated freewheeling diode Optimized for low dynamic losses Applications Traction Key Parameters V DRM = 2 000 I TAVm = 374 I TSM = 5 000 V TO = 1.748 rT = 0.653

G3F diode

Contextual Info: Laser Diodes Gemini Series - 9x× nm High Brightness Laser Diode BLD-91-tt-50W-G3-F-10-c-l-xxx BLD-94-tt-50W-G3-F-10-c-l-xxx BLD-98-tt-50W-G3-F-10-c-l-xxx High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and

MONOLITHIC DIODE matrices

Abstract: HM1-051 diode matrix hm1 Diode S4 55a HM9-050 harris diode HM9-081 diode matrix diode matrix harris HM-030
Contextual Info: CIE1 HM-010/030/040/050/ 074/080/090 HARRIS SEM IC O N D U C TO R A D IV ISIO N O F H A R R IS C O R P O R A T IO N MIL Temperature Diode Matrices Harris M o n olithic Diode Matrices consist o f arrays o f passivated silicon diodes, fabricated in dielectrically

5STR04T2032

Abstract: thyristor t 188 f 1000 5STR tr 453 thyristor
Contextual Info: 5STR 04T2032 5STR 04T2032 Old part no. TP 907FC-370-20 Reverse Conducting Thyristor Properties § Integrated freewheeling diode § Optimized for low dynamic losses Applications § Traction Key Parameters V DRM = 2 000 I TAVm = 374 I TSM = 5 000 V TO = 1.748

TP 907FC-320-20

Abstract: 5STR 907FC-320-20 03T2040 thyristor ABB 0 273 300 354 ABB thyristor 5 03T2
Contextual Info: 5STR 03T2040  5STR 03T2040 Old part no. TP 907FC-320-20 Reverse Conducting Thyristor Properties • Integrated freewheeling diode • Optimized for low dynamic losses Applications  Traction Key Parameters V DRM = 2 000 I TAVm = 360 I TSM = 5 000