DIODE 900A Search Results

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900HC-90S ● IF . 900A ● VRRM . 4500V

a3101

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900HC-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900HC-90S ● IF . 900A ● VRRM . 4500V

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM900DB-90S ● IF . 900A ● VRRM . 4500V

semikron skiip 942

Contextual Info: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Skiip 942 gb 120 317 ctv f

Abstract: semikron skiip 942
Contextual Info: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Skiip 942 gb 120 317 ctv f

Abstract: ctv circuit semikron skiip 942
Contextual Info: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms

Skiip 942 gb 120 317 ctv f

Abstract: semikron skiip 942 skiip 942 gb 120 317 skiip gd 120 skiip gb 120 IC-900A skiip 942 GD 120 317 CTV SKIIP CASE 942
Contextual Info: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms

diode A782

Abstract: t119 A782 A782EM A782EN A782FB A782FD A782FM A782FN A782FP
Contextual Info: A782 53mm RECTIFIER DIODE 7000V / 900A SPCO The A782 rectifier diode features a nominal 53mm silicon junction diameter design, manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

KA 2133 A

Abstract: diode rectifier 900A A782 A782EM A782EN A782FB A782FD A782FM A782FN A782FP
Contextual Info: A782 53mm RECTIFIER DIODE 7000V / 900A The A782 rectifier diode features a nominal 53mm silicon junction diameter design, manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

Contextual Info: Technische Information / Technical Information Dioden-Modul mit Chopper-IGBT Diode Module with Chopper-IGBT N DD B6U 134 N 16 RR Elektrische Eigenschaften / Electrical properties B6 Zieldaten Target data Höchstzulässige Werte / Maximum rated values Netz-Diode / Rectifier diode

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

semikron skiip 400 gb

Abstract: semikron skiip 33 1513gb172 semikron skiip 31 semikron skiip SKIIP APPLICATION SKIIP DRIVER skiip gb 120 PX16 SKIIP 33
Contextual Info: SKiiP 1513GB172-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 3

Abstract: semikron skiip 400 gb 1513GB122-3DL PX16
Contextual Info: SKiiP 1513GB122-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

1803GB122-3DW

Abstract: SK 69 DIODE IC-900A
Contextual Info: SKiiP 1803GB122-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

si 1125 hd

Abstract: semikron skiip 400 gb 1513GB173-3DL PX16
Contextual Info: SKiiP 1513GB173-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 400 gb

Abstract: SemiSel 1803GB173-3DW
Contextual Info: SKiiP 1803GB173-3DW I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

semikron skiip 342

Abstract: semikron skiip 400 gb 12960 semikron skiip 12-0-12 transformer used 24v dc supply SKIIP APPLICATION skiip gb 120 1813GB123-3DL PX16 B75 diode
Contextual Info: SKiiP 1813GB123-3DL I. Power section Absolute maximum ratings Symbol Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms

BSM30GP60

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

BSM30GP60

Abstract: BSM30GP60 INVERTER CIRCUIT
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

BSM30GP60

Abstract: BSM30GP60 INVERTER CIRCUIT Al2O3
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

BSM30GP60

Abstract: BSM30GP60 INVERTER CIRCUIT
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM30GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

D650S

Contextual Info: S Datenblatt / Data sheet Schnelle Diode Fast Diode Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Kenndaten Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften D650S

1513gb172

Contextual Info: SKiiP 1513GB172-3DL I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES 1 VCC Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM T j = 150 °C, tp = 10ms; sin 2 I t (Diode) Diode, T j = 150 °C, 10ms