DIODE 811 Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

DIODE A6 sod110

Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Contextual Info: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation

Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode

DS1112SG

Abstract: DS1112SG55 DS1112SG56 DS1112SG57 DS1112SG58 DS1112SG59 DS1112SG60 DS4181-5
Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode

DS1112SG

Abstract: DS1112SG55 DS1112SG56 DS1112SG57 DS1112SG58 DS1112SG59 DS1112SG60 DS4181-5
Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode

Contextual Info: 1N4148W-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Contextual Info: 1N4148W-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

Contextual Info: 1N4148W-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

Contextual Info: DA 811AK . 8110AK 1,2W . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter "  Diode arrays Silicon rectifiers arrays DA 811AK . 8110AK 1,2W Forward Current: 0,6 A Reverse Voltage: 100 to 1000 V

marking code k1

Abstract: BAP51-02 smd marking KM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance

Contextual Info: 808nm Laser Diode 808nm IR Laser Diode LCU80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

BAP51-03

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD

smd schottky diode marking 72

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic

Contextual Info: 1N4148W-V-G Vishay Semiconductors Small Signal Fast Switching Diode Features • • • • Silicon epitaxial planar diode Fast switching diode AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data

Marking Code 72

Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

NEC JAPAN 567

Abstract: NX8563LF PX10160E
Contextual Info: DATA SHEET LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain

1PS59SB20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

601 Opto isolator

Abstract: NX8562LF PX10160E
Contextual Info: LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).

NX8570SD

Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Contextual Info: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength

1583 Series

Abstract: 362d 766d
Contextual Info: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength