DIODE 811 Search Results
DIODE 811 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 811 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SR506 Diode
Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
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smd4001-4007sr560do-27uf4004+10 | |
BAP51-02
Abstract: BP317
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m3d319bap51-02od523mam405+2 | |
109 DIODEContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance. |
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m3d319bap50-02od523mam405+2 | |
DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
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od110innovat27scb63diode a6 sod110+9 | |
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Contextual Info: DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 6000V ■ High Surge Capability IF AV 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode |
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ds1112sgds4181-4ds4181-50500a+5 | |
DS1112SG
Abstract: DS1112SG55 DS1112SG56 DS1112SG57 DS1112SG58 DS1112SG59 DS1112SG60 DS4181-5
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ds1112sgds4181-4ds4181-50500a+6 | |
BA792
Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
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ba792mam139od110scds47+10 | |
SMD diode sg 46
Abstract: SMD diode sg 03
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OCR Scan |
bap50-03sca61smd diode sg 46smd diode sg 03 | |
DS1112SG
Abstract: DS1112SG55 DS1112SG56 DS1112SG57 DS1112SG58 DS1112SG59 DS1112SG60 DS4181-5
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ds1112sgds4181-4ds4181-50500a+6 | |
DS1112SG56
Abstract: tel 839 b
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ds1112sgds4181-4ds4181-50500a+6 | |
DS1112SG60
Abstract: DS4181-5 AN4839 DS1112SG DS1112SG55 DS1112SG56 DS1112SG57 DS1112SG58 DS1112SG59
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ds1112sgds4181-4ds4181-50500a+7 | |
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Contextual Info: 1N4148W-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 |
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1n4148w-v-gaec-q101od-12318/10k+5 | |
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Contextual Info: 1N4148W-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 |
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1n4148w-v-gaec-q101od-12318/10k+5 | |
SMD MARKING 541 DIODE
Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
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m3d178ba792mam139od110+11 | |
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2510W
Abstract: RS1M diode
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do-214acabs10ll4148mb10s+7 | |
diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
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OCR Scan |
bap51bap51-03diode a62diode smd ed 74+1 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance |
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m3d319bap63-02od523mam405+1 | |
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Contextual Info: DA 811AK . 8110AK 1,2W . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter " Diode arrays Silicon rectifiers arrays DA 811AK . 8110AK 1,2W Forward Current: 0,6 A Reverse Voltage: 100 to 1000 V |
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811ak8110ak8110k | |
marking code k1
Abstract: BAP51-02 smd marking KM
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m3d319bap51-02od523mam405+3 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance |
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m3d319bap63-02od523mam405+1 | |
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Contextual Info: 808nm Laser Diode 808nm IR Laser Diode LCU80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5(ψ9.0mm ),With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) |
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808nmlcu80e041a-preliminary500mwlcu80e041a | |
smd code marking A8 diode
Abstract: smd diode A8 smd diode code a8
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m3d049bap50-03od323mam406+4 | |
BAP51-03Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance |
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m3d049bap51-03od323mam406+1 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD |
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m3d3191ps79sb10sc-79mam403+2 | |