DIODE 809 MARKING Search Results

Si8809EDB

Contextual Info: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si8809EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.090 at VGS = - 4.5 V - 2.6 0.119 at VGS = - 2.5 V - 2.3 0.155 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21

d 1667

Abstract: marking bbb2 S380D
Contextual Info: 17E D TELEFUNKEN ELECTRONIC ODD^flflS 1 • ALGG m S 380 D • S 381 D YGiyilHUIMtiM electronic Creative lechnôtogfes 1 Silicon Mesa Diode 01 -1 ST Application: Rectifier Features: • Glass passivated junction • Hermetically sealed package Dim ensions in mm

in 4008 diode

Abstract: DIODE 4008 "DIODE" 4008 DIODE 809 marking 1T364 3155 diode cd 3301 diode marking 809
Contextual Info: SONY 1T364 Silicon Variable Capacitance Diode_ For the availability of this product, please contact tne sales office. Description The 1T364 is a variable capacitance diode designed for the tuning of wide band multichannel M-235 CATV tuners.

74369

Abstract: si1465
Contextual Info: SPICE Device Model Si1465DH Vishay Siliconix P-Channel 8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

FC809

Abstract: SB007-03CP
Contextual Info: Ordering number :EN3908A FC809 Silicon Barrier Diode 30V, 70mA Rectifier Applications Package Dimensions • General rectification applications. · High frequency rectification switching regulators, converters, choppers . unit:mm 1236A [FC809] Features · Low forward voltage (VF max=0.55V) .

Contextual Info: Ordering number :EN3908A FC809 Silicon Barrier Diode 30V, 70mA Rectifier Applications Package Dimensions • General rectification applications. · High frequency rectification switching regulators, converters, choppers . unit:mm 1236A [FC809] Features · Low forward voltage (VF max=0.55V) .

Contextual Info: MOTOROLA Order this document by MMBV809LT1/D SEMICONDUCTOR TECHNICAL DATA S ilicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical tuning methods.

Contextual Info: SPICE Device Model SQM120P06-07L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: 1SMA4741 THRU 1SMA200Z Surface Mount Silicon Zener Diode Voltage Range 11 to 200 Volts 1.0 Watts Peak Power SMA/DO-214AC Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction

Contextual Info: SQM110P06-07L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) () at VGS = - 10 V 0.0067 RDS(on) () at VGS = - 4.5 V 0.0088 ID (A) - 120

SQM120P06-07L

Contextual Info: SQM120P06-07L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.0067 RDS(on) (Ω) at VGS = - 4.5 V 0.0088 ID (A) - 120

infineon marking TO-252

Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)

12CNE8N

Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)

PG-TO220-3

Abstract: IPD12CNE8N IPP12CNE8N
Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) 85 V 12.4 ID m: 67 A • Very low on-resistance R DS(on)

Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)

Contextual Info: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)

IMP809SEUR

Abstract: AOxx SOT-23 69HC11 IMP809 MAX811TEUS IMP809LEUR-T 805L IMP690A IMP809s IMP810
Contextual Info: POWER MANAGEMENT Supervisors IMP690A ,692A , 802L/M, 805L µP Supervisor with Battery Backup Switch IMP705/6/7/8, 813L Low-Power µP Supervisor Circuits IMP809, IMP810 3-Pin Microcontroller Power Supply Supervisor IMP811 , IMP81 2 4-Pin µP Voltage Supervisor with Manual Reset

STY105NM50N

Abstract: 105NM50N
Contextual Info: STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh II Power MOSFET in a Max247 package Datasheet — production data Features Order code VDSS @TjMAX RDS on max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) ■ 100% avalanche tested

Contextual Info: FCH104N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior

Contextual Info: STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh II Power MOSFET in a Max247 package Datasheet - production data Features Order code VDSS @TjMAX RDS on max ID STY105NM50N 550 V < 0.022 Ω 110 A • Max247 worldwide best RDS(on) 1 2 • 100% avalanche tested

e5p02

Abstract: POWER STEP UP
Contextual Info: NTMS5P02R2 Power MOSFET -5.4 Amps, -20 Volts P−Channel Enhancement−Mode Single SO−8 Package Features http://onsemi.com • High Density Power MOSFET with Ultra Low RDS on • • • • • Providing Higher Efficiency Miniature SO−8 Surface Mount Package − Saves Board Space

fairchild 6130

Contextual Info: FCP104N60F N-Channel SuperFET ll FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance

Contextual Info: FCH104N60F N-Channel SuperFET II FRFET® MOSFET 600 V, 37 A, 104 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance