DIODE 6Y Search Results
DIODE 6Y Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 6Y Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications: |
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dss6-0025bs6y025aso-25260747and+1 | |
6Y150AS
Abstract: 6Y150AS IXYS
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dss6-015as6y150aso-25260747and+2 | |
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Contextual Info: DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak |
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dss6-0045as6y045aso-25260747and+1 | |
C532 diode
Abstract: b16/41289
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fp50r06w2e314bbfba4f32f223b+4 | |
diode zener ZD 260
Abstract: KDZ12VV KDZ36VV sy 360 diode DIODE MARKING 9Y KDZ11VV KDZ13VV KDZ20VV diode zener ZL 27 KDZ33VV
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kdz36vvkdz33vvkdz30vvkdz18vv+12 | |
DIODE MARKING 9Y
Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
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kdz11vvkdz12vvkdz13vvkdz15vv+13 | |
KDZ16VV
Abstract: diode zener ZD 150 diode zener ZD 260 diode zener ZD 36 marking zn diode marking zn DIODE MARKING 9Y
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kdz11vvkdz12vvkdz13vvkdz15vv+12 | |
ifs100b12n3e4_b31
Abstract: IFS100B12N3E4-B31 IFS100B12N3E4
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ifs100b12n3e4ifs100b12n3e4_b31ifs100b12n3e4-b31 | |
IFS100B12N3E4
Abstract: C5363 IFS100B12N3E4B
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ifs100b12n3e4428654f4bcfc24e32dc+8 | |
13.8 8w zener diode
Abstract: "MARKING CODE" 3Y zener marking sot323 code SEMICONDUCTOR 12w marking code sot 23 6Y marking code marking code z2
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OCR Scan |
cmszda47v250mwot-323t-323+8 | |
diode zener ZD 36
Abstract: zener diode, zl 33 DIODE MARKING 9Y zener diode zg 36 diode marking 4Y diode zener ZL 30 diode zener ZD 15 diode zener ZL 15 zener diode BZ 22 zener diode, zl 22
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OCR Scan |
w-36w20x20mdiode zener zd 36zener diode, zl 33+8 | |
BT 69D
Abstract: FBC 320
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ff200r12mt4cbb32cbb326223db+5 | |
LTC4098-3.6
Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
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ifs75b12n3e4428654f4bcfc24e32dc+11 | |
ifs75b12n3e4_b32Contextual Info: Technische Information / technical information IFS75B12N3E4_B32 IGBT-Module IGBT-modules MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense |
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ifs75b12n3e4ifs75b12n3e4_b32 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ600R12KE3_B1 62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode 62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode #$%&6'6# |
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fz600r12ke34266c33267cc2682322642c+4 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+, |
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ddb6u25n16vr3de1322e14dd2313b32e36+6 | |
br - b2d
Abstract: br b2d
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bsm200gb120dlccbb32cbb326223db+7 | |
BSM200GB120DLCContextual Info: Technische Information / technical information BSM200GB120DLC IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values |
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bsm200gb120dlc | |
k3532
Abstract: lm 3244
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ddb6u75n16w1rd36134623d322c46523+5 | |
TDB6HK180N16RR
Abstract: 6a65
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tdb6hk180n16rrcef363bc1322c14bb32c36+5 | |
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Contextual Info: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ± |
OCR Scan |
5011zieli501 | |
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Contextual Info: Schottky Barrier Diode Single Diode M2FH3 U n it ‘ m m Package : M2F Weight 0.072« T y p 30V 6A Feature • /JvguSMD •«« V f=0.36V • Small SMD • Super-Low Vf=0.36V • I { "J t U — iiJ S K ih • Reverse connect protection for DC power source |
OCR Scan |
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Contextual Info: 20mm BIG LAMP DLC/6YD YELLOW Features Description ! 12 The Yellow source color devices are made with Gallium PINS. ! HIGH LUMINOUS INTENSITY. Arsenide Phosphide on Gallium Phosphide Yellow Light ! LOW POWER CONSUMPTION. Emitting Diode. ! WIDE VIEWING ANGLE. |
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dsaa7774mar/04/2003 | |
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Contextual Info: 20mm BIG LAMP DLA/6YD YELLOW Features Description ! 12 The Yellow source color devices are made with Gallium PINS. ! HIGH LUMINOUS INTENSITY. Arsenide Phosphide on Gallium Phosphide Yellow Light ! LOW POWER CONSUMPTION. Emitting Diode. ! WIDE VIEWING ANGLE. |
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dsaa8161mar/04/2003 | |