DIODE 6V 33 Search Results

Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

MA550

Abstract: TPS61150A TPS61150ADRCR TPS61150ADRCT VLCF4018T-100MR74-2 VLF3012AT-100MR49
Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

TPS61150A

Abstract: TPS61150ADRCR TPS61150ADRCT VLCF4018T-100MR74-2 VLF3012AT-100MR49
Contextual Info: TPS61150A www.ti.com SLVS706 – OCTOBER 2006 DUAL OUTPUT BOOST WLED DRIVER USING SINGLE INDUCTOR FEATURES • • • • • • • • • • • • 2.5V to 6V Input Voltage Range 0.7A Integrated Switch Built-in Power Diode 1.2MHz Fixed PWM Frequency

BLB101SURC-E-6V-P

Contextual Info: 10mm BAYONET BASED LED LAMP PRELIMINARY SPEC Part Number: BLB101SURC-E-6V-P Features Description z BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT The Hyper Red source color devices are made with APPLICATION OF DIFFERENT ACROSS CURRENT. Hyper Red InGaAlP on GaAs substrate Light Emitting Diode.

Contextual Info: Plug-In TOSW-425+ TOSW-425 Switch 50Ω SPDT Pin Diode, TTL Driver, Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power 10 to 2500 MHz L +20 dBm , M(+28 dBm), U(+30 dBm) Supply V +6V max. Pin Connections

TOSW-230

Contextual Info: Plug-In TOSW-230+ TOSW-230 Switch 50Ω SPDT Pin Diode, TTL Driver, Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power L +20 dBm , M(+28 dBm), U(+30 dBm) Supply V +6V max. Pin Connections RF IN (COM) RF OUT 1

Contextual Info: Plug-In TOSW-425+ TOSW-425 Switch 50Ω SPDT Pin Diode, TTL Driver, Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power L +20 dBm , M(+28 dBm), U(+30 dBm) Supply V +6V max. Pin Connections RF IN RF OUT 1 RF OUT 2

ZSDR-230

Contextual Info: Coaxial Switch ZSDR-230+ 50W SPDT Pin Diode, Reflective TTL Driver Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power 10 to 3000 MHz L +20 dBm , M(+28 dBm), U(+30 dBm) Supply V +6V max. Permanent damage may occur if any of these limits are exceeded.

diode RF 302

Abstract: ZSDR-230
Contextual Info: Coaxial Switch ZSDR-230+ 50W SPDT Pin Diode, TTL Driver Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power 10 to 3000 MHz L +20 dBm , M(+28 dBm), U(+30 dBm) Supply V +6V max. Permanent damage may occur if any of these limits are exceeded.

bandfilter

Abstract: diods detector diode bandfilter VP
Contextual Info: KAB 1 EABi T r ip le J io d e T h e trip le diode E A B I max32 consists o f th re e diodes 6V^ a rra n g e d a b o u t a com m on, h o rizo n tally m o u n te d , c a ­ th o d e , h a v in g b e en especi­ a lly develo p ed fo r 3-diode circu its. T he o b je c t o f th is

Relay schrack RU

Abstract: 8 PIN DPDT RELAY 24V dc omron RELAY PCB DPDT 12V omron relay G2R-2 8 pin 12V DC relay finder 12V DC Allen-Bradley 700-hn126 Allen-Bradley 700-HN121 DPDT relay 12v 8 PIN DPDT RELAY 12V idec SH2B-05
Contextual Info: Relay selection guide 05a2 7/15/05 12:33 PM Page 1 RJ Relay RQ Relay RR Relay RY Relay Compact size for maximum space- ● Compact, printed circuit board relay ● 100% robotic assembled ● Small industrial 10A GP relay ● Rugged industrial 10A relay ●

MAX1578EVKIT

Contextual Info: KIT ATION EVALU E L B AVAILA 19-3359; Rev 0; 8/04 Complete Bias and White LED Power Supplies for Small TFT Displays Features The MAX1578/MAX1579 provide four regulated outputs to meet all the voltage requirements for small activematrix TFT-LCD displays in handheld devices where

GRM188R60J475KE19

Abstract: MAX1578 MAX1578ETG MAX1579
Contextual Info: KIT ATION EVALU E L B AVAILA 19-3359; Rev 1; 8/05 Complete Bias and White LED Power Supplies for Small TFT Displays Features The MAX1578/MAX1579 provide four regulated outputs to meet all the voltage requirements for small activematrix TFT-LCD displays in handheld devices where

IXTH450P2

Abstract: IXTP450P2 to-247 to-220 to-3p IXTQ450P2 DS100241A
Contextual Info: IXTP450P2 IXTQ450P2 IXTH450P2 Polar2TM Power MOSFETs VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: Polar2TM Power MOSFETs VDSS ID25 IXTP450P2 IXTQ450P2 IXTH450P2 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

6R199P

Abstract: 6R199 mosfet 6R199 6R199P DATA SHEET IPI60R199CP ISS 99 diode JESD22 SP000103248
Contextual Info: IPI60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R199P

Abstract: 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP SMD MARKING CODE 102 JESD22 SP000223256
Contextual Info: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R199P

Abstract: 6R199P mosfet 6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199CP SP000089802 IPW60R199 JESD22
Contextual Info: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R199P

Abstract: IPP60R199CP 6R199 6R199P mosfet 6R199P TO220 6R199P DATA SHEET IPP60R199 mosfet 6R199 JESD22 SP000084278
Contextual Info: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications