DIODE 682 Search Results

MMAD1108

Contextual Info: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting

Contextual Info: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting

Contextual Info: MAD1103 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up

Contextual Info: MAD1103 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up

Contextual Info: MAD1108 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin DIP package for use as steering diodes protecting up

Contextual Info: MAD1109 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up

Contextual Info: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting

1N4148 JANTX microsemi

Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
Contextual Info: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching

1N4148 JANTX microsemi

Abstract: 1N4148 JANTXV MELF Package EIA-418D
Contextual Info: 1N4148UBC Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UBC switching/signal diode features ceramic body with ceramic lid construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with

semiconductor

Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5

diode BA148

Abstract: BA148 BA148 diode
Contextual Info: BA148 HIG H SPEED SILICON DIODE Double diffused general purpose diode in a DO-14 plastic envelope for use as line phase detector, clamping diode, scan rectifier for the supply of the small signal parts in television receivers etc. QUICK REFERENCE DATA C rest working reverse voltage

1N4148 JANTXV

Abstract: 1N4148UB2 EIA-418D
Contextual Info: 1N4148UB2 Compliant Two Pin Ceramic Switching Diode Qualified per MIL-PRF-19500/116 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 1N4148UB2 switching/signal diode features ceramic body construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

Contextual Info: Product specification Philips Semiconductors Schottky barrier diode BAT85 FEATURES DESCRIPTION • Low forward voltage • Guard ring protected Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68

solar panel blocking diode

Contextual Info: SFDS1045Le3 HALOGEN Schottky Barrier Photovoltaic Bypass Diode FREE DESCRIPTION The SFDS1045Le3 is a single Schottky rectifier assembled in a thin flexible package. The device is designed specifically for use as a photovoltaic bypass diode for solar panels. Its low

BA682

Abstract: diode BA683 diode 682 64REF
Contextual Info: Diodes SMD Type Band-switching diodes BA682; BA683 LL-34 Unit: mm Features 1.50 1.30 2.64REF Continuous reverse voltage:max. 35 V 0.50 0.35 Continuous forward current:max. 100 mA Low diode capacitance:max. 1.5 pF Low diode forward resistance:max. 0.7 to 1.2

1N5711UB

Contextual Info: 1N5711UB and 1N5712UB CC, CA, & D Qualified Levels: JAN, JANTX, JANTXV and JANS Schottky Barrier Diode Ceramic Surface Mount Compliant Qualified per MIL-PRF-19500/444 DESCRIPTION This 1N5711UB and 1N5712UB Schottky barrier diode is ceramic encased and offers military

SMA905

Abstract: LDD100-3 ntc pt100 limo FB laser LDD100 SMA905 connector SMA905 CONNECTOR DRAWING diode e 2060 1025-1080nm DIODE 809
Contextual Info: LIMO FB Series pump HIGH-POWER DIODE LASER • • • • • • • Optical data High brightness laser for, pump applications SMA905 Plug & Play connector for optical fibres Compact dimensions Passively cooled Dual temperature sensor (NTC/PT100) Optional monitor diode

Contextual Info: UPP9401e3 Compliant Powermite Package Commercial Two-Way Radio Antenna Switch Diode DESCRIPTION This Microsemi Powermite PIN diode is perfect for two-way radio antenna switch applications where size and power handling capability are critical with its high isolation, low loss and low

Contextual Info: Product specification BA682; BA683 LL-34 Unit: mm Features 1.50 1.30 2.64REF Continuous reverse voltage:max. 35 V 0.50 0.35 Continuous forward current:max. 100 mA Low diode capacitance:max. 1.5 pF Low diode forward resistance:max. 0.7 to 1.2 3.60 3.30 Absolute Maximum Ratings Ta = 25

br b2d

Abstract: br- b2d br - b2d LTC4098-3.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

UPP1002

Abstract: msc 0016 DO-216
Contextual Info: UPP1001e3, UPP1002e3, UPP1004e3 Compliant Powermite Package Commercial Two-Way Radio Antenna Switch Diode DESCRIPTION With high isolation, low loss, and low distortion characteristics, this Microsemi Powermite PIN diode is perfect for two-way radio antenna switch applications where size and power handling

HL6720G

Contextual Info: HL6720G AlGaInP Laser Diode Description The HL6720G is a 0.67 µm band AlGaInP index-guided laser diode with a double heterostructure. It is suitable as a light source for pointers, and various other types of optical equipment. Hermetic sealing of the package assures high reliability.

Contextual Info: HL6724MG AIGalnP Laser Diode Description The HL6724MG is a 0.67 fim band AIGalnP laser diode with a multi-quantum well MQW structure. It is suitable as a light source for laser pointers and optical equipments for amusement. Features • • • • Package Type