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    DIODE 682 Search Results

    DIODE 682 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet

    DIODE 682 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMAD1108

    Contextual Info: MMAD1108 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-Pin SOIC package for use as steering diodes protecting


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    MMAD1108 16-Pin RF01065, PDF

    Contextual Info: MMAD1103 e3 Switching Diode Array Steering Diode TVS ArrayTM Available DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting


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    MMAD1103 14-Pin RF01063, PDF

    Contextual Info: MAD1103 e3 Available Switching Diode Array Steering Diode TVS ArrayTM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin DIP package for use as steering diodes protecting up


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    MAD1103 14-Pin RF01136, PDF

    1N4148 JANTX microsemi

    Abstract: 1N4148 JANTX 1N4148 JANTXV 1N4148UB 1n4148 general diode microsemi 1n4148 EIA-418D
    Contextual Info: 1N4148UB Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UB switching/signal diode features ceramic bodied construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching


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    1N4148UB MIL-PRF-19500/116 1N4148UB MIL-PRF-19500/116. 1N4148 T4-LDS-0281-2, 1N4148 JANTX microsemi 1N4148 JANTX 1N4148 JANTXV 1n4148 general diode microsemi 1n4148 EIA-418D PDF

    1N4148 JANTX microsemi

    Abstract: 1N4148 JANTXV MELF Package EIA-418D
    Contextual Info: 1N4148UBC Compliant Qualified Levels: JAN, JANTX, and JANTXV Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This 1N4148UBC switching/signal diode features ceramic body with ceramic lid construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with


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    1N4148UBC MIL-PRF-19500/116 1N4148UBC MIL-PRF-19500/116. 1N4148 T4-LDS-0281-4, 1N4148 JANTX microsemi 1N4148 JANTXV MELF Package EIA-418D PDF

    semiconductor

    Abstract: hirect H507CH Hirect diode H400TB
    Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5


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    PDF

    1N4148 JANTXV

    Abstract: 1N4148UB2 EIA-418D
    Contextual Info: 1N4148UB2 Compliant Two Pin Ceramic Switching Diode Qualified per MIL-PRF-19500/116 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 1N4148UB2 switching/signal diode features ceramic body construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching


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    1N4148UB2 MIL-PRF-19500/116 1N4148UB2 MIL-PRF-19500/116. 1N4148 time085 T4-LDS-0281-3, 1N4148 JANTXV EIA-418D PDF

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx PDF

    solar panel blocking diode

    Contextual Info: SFDS1045Le3 HALOGEN Schottky Barrier Photovoltaic Bypass Diode FREE DESCRIPTION The SFDS1045Le3 is a single Schottky rectifier assembled in a thin flexible package. The device is designed specifically for use as a photovoltaic bypass diode for solar panels. Its low


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    SFDS1045Le3 SFDS1045Le3 RF01055, solar panel blocking diode PDF

    BA682

    Abstract: diode BA683 diode 682 64REF
    Contextual Info: Diodes SMD Type Band-switching diodes BA682; BA683 LL-34 Unit: mm Features 1.50 1.30 2.64REF Continuous reverse voltage:max. 35 V 0.50 0.35 Continuous forward current:max. 100 mA Low diode capacitance:max. 1.5 pF Low diode forward resistance:max. 0.7 to 1.2


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    BA682; BA683 LL-34 64REF BA682 diode BA683 diode 682 64REF PDF

    SMA905

    Abstract: LDD100-3 ntc pt100 limo FB laser LDD100 SMA905 connector SMA905 CONNECTOR DRAWING diode e 2060 1025-1080nm DIODE 809
    Contextual Info: LIMO FB Series pump HIGH-POWER DIODE LASER • • • • • • • Optical data High brightness laser for, pump applications SMA905 Plug & Play connector for optical fibres Compact dimensions Passively cooled Dual temperature sensor (NTC/PT100) Optional monitor diode


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    SMA905 NTC/PT100) SMA905 LDD100-3 ntc pt100 limo FB laser LDD100 SMA905 connector SMA905 CONNECTOR DRAWING diode e 2060 1025-1080nm DIODE 809 PDF

    Contextual Info: UPP9401e3 Compliant Powermite Package Commercial Two-Way Radio Antenna Switch Diode DESCRIPTION This Microsemi Powermite PIN diode is perfect for two-way radio antenna switch applications where size and power handling capability are critical with its high isolation, low loss and low


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    UPP9401e3 RF01105, PDF

    Contextual Info: Product specification BA682; BA683 LL-34 Unit: mm Features 1.50 1.30 2.64REF Continuous reverse voltage:max. 35 V 0.50 0.35 Continuous forward current:max. 100 mA Low diode capacitance:max. 1.5 pF Low diode forward resistance:max. 0.7 to 1.2 3.60 3.30 Absolute Maximum Ratings Ta = 25


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    BA682; BA683 LL-34 64REF PDF

    UPP1002

    Abstract: msc 0016 DO-216
    Contextual Info: UPP1001e3, UPP1002e3, UPP1004e3 Compliant Powermite Package Commercial Two-Way Radio Antenna Switch Diode DESCRIPTION With high isolation, low loss, and low distortion characteristics, this Microsemi Powermite PIN diode is perfect for two-way radio antenna switch applications where size and power handling


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    UPP1001e3, UPP1002e3, UPP1004e3 RF01104, UPP1002 msc 0016 DO-216 PDF

    phoenix contact QUINT 40

    Abstract: 1197X redundancy module quint-diode QUINT-DIODE/40
    Contextual Info: Redundancy Module QUINT-DIODE/40 QUINT DIODE provides: • 100% decoupling of power supplies connected in parallel • Can be installed in potentially explosive areas • Load currents up to 60 A supported • Easy assembly by snapping onto the DIN rail 1. Short Description


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    QUINT-DIODE/40 phoenix contact QUINT 40 1197X redundancy module quint-diode QUINT-DIODE/40 PDF

    Hitachi DSA002711

    Contextual Info: HL6726MG Visible High Power Laser Diode Description The HL6726MG is a 0.68µm band AlGaInP laser diode LD with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types of optical equipment.


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    HL6726MG HL6726MG 695nm HL6726MG: Hitachi DSA002711 PDF

    HL6724MG

    Abstract: Hitachi DSA00279
    Contextual Info: HL6724MG AlGaInP Laser Diode ADE-208-261D Z 5th Edition Dec. 2000 Description The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser pointers and optical equipments for amusement.


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    HL6724MG ADE-208-261D HL6724MG HL6724MG: D-85622 Hitachi DSA00279 PDF

    670NM Laser-Diode

    Contextual Info: HL6724MG AlGalnP Laser Diode Literature Order Number Rev 0 February 1997 Description The HL6724MG is a 0.67 µm band AlGalnP laser diode with a multi-quantum well MQW structure. It is suitable as a light source for laser pointers and optical equipments for amusement.


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    HL6724MG HL6724MG 670nm 670NM Laser-Diode PDF

    Hitachi DSA00279

    Contextual Info: HL6720G AlGaInP Laser Diode ADE-208-193B Z 3rd Edition Dec. 1999 Description The HL6720G is a 0.67 µm band AlGaInP index-guided laser diode with a double heterostructure. It is suitable as a light source for pointers, and various other types of optical equipment. Hermetic sealing


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    HL6720G ADE-208-193B HL6720G HL6720G: Hitachi DSA00279 PDF

    1n4148-1

    Contextual Info: 1N4148-1 Qualified Levels: JAN, JANTX, and JANTXV Glass Axial Switching Diode Available on commercial versions Qualified per MIL-PRF-19500/116 DESCRIPTION This popular 1N4148-1 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This


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    1N4148-1 MIL-PRF-19500/116 1N4148-1 MIL-PRF-19500/116. DO-35 T4-LDS-0281, PDF

    Contextual Info: 1N4148UR-1 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV Glass MELF Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This popular 1N4148UR-1 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116.


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    1N4148UR-1 MIL-PRF-19500/116 1N4148UR-1 MIL-PRF-19500/116. CDLL4148 DO-213AA T4-LDS-0281-1, PDF

    Hitachi DSA002726

    Contextual Info: HL6724MG AlGaInP Laser Diode Description The HL6724MG is a 0.67 µm band AlGaInP laser diode with a multi-quantum well MQW structure. It is suitable as a light source for laser pointers and optical equipments for amusement. Features • • • • Visible light output: 670nm Typ


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    HL6724MG HL6724MG 670nm HL6724MG: Hitachi DSA002726 PDF

    Hitachi DSA002726

    Contextual Info: HL6720G AlGaInP Laser Diode ADE-208-193C Z 4th Edition Dec. 1999 Description The HL6720G is a 0.67 µm band AlGaInP index-guided laser diode with a double heterostructure. It is suitable as a light source for pointers, and various other types of optical equipment. Hermetic sealing


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    HL6720G ADE-208-193C HL6720G HL6720G: Hitachi DSA002726 PDF

    Contextual Info: HL6714G AlGalnP Laser Diode Literature Order Number Rev 0 February 1997 Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well MQW structure. It is suitable as a light source for laser beam printers, levelers and various other


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    HL6714G HL6714G PDF