DIODE 66A Search Results

BD3 diode

Abstract: 6n06e k4366
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

IR 006

Abstract: IRF7521D1
Contextual Info: P D -9.1646 International lö R Rectifier • • • • • PRELIMINARY FETKY IRF7521D1 MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low Vp Schottky Rectifier Generation V T echnology Micro8 Footprint

ML01720A

Abstract: mitsubishi tosa Ml-01 laser diode driver ic
Contextual Info: ADVANCED PRODUCTS INFORMATION TZ3-08-014-02 MITSUBISHI ICs for Optical Communication ML01720A 10Gb/s Laser Diode Driver IC GENERAL DESCRIPTION The ML01720A is laser diode drivers for 10Gb/s optical communication systems. It is in a 4mm x 4mm 24pin Small-size

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

IRF7521D1

Abstract: 9164
Contextual Info: PD-91646C IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint A A S G 1 8 K 2 7 K 3 6 4 5 VDSS = 20V

IRF7521D1

Abstract: ba 7321
Contextual Info: PD- 91646B IRF7521D1 PRELIMINARY FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A

TDB6HK180N16RR

Abstract: 6a65
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3

EIA-541

Abstract: IRF7501
Contextual Info: PD- 95241 IRF7521D1PbF l l l l l l FETKYä MOSFET / Schottky Diode HEXFET Co-packaged Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 20V

PAH308

Abstract: PAT308
Contextual Info: THYRISTOR MODULE 66A / 800V PAT308 PAH308 FEATURES OUTLINE DRAWING * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 PAT TYPICAL APPLICATIONS * AC phase control * AC switch

Contextual Info: SCHOTTKY BARRIER DIODE MODULE PE60Q04N 66A/40V FEATURES • Three - Arms, Cathode Common to Base Plate ° Low Forward Voltage Drop • Low Power Loss, High Efficiency 0 High Surge Capability MAXIMUM RATINGS \ type Voltage Rating PE60Q04N - Unit Symboles.

AT30

Abstract: PAH3012 PAH3016
Contextual Info: THYRISTOR MODULE 66A / 1200 to 1600V P AT30 12 P AT30 16 PAH3012 PAH3016 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Anti-Parallel Circuit * High Surge Capability * UL Recognized, File No. E187184 OUTLINE DRAWING φ TYPICAL APPLICATIONS

Contextual Info: SCHOTTKY BARRIER DIODE 60KQ10B 66A/10V 5.31.209 4.71.185) FEATURES 5.71.224) 5.31.208) o Similar to TO-247AC TO-3P) Case °Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency 2.2I.087I-J 3.21.126). 0.81.031) MAX ^ • High Surge Capability

61MQ60

Contextual Info: SCHOTTKY BARRIER DIODE 61MQ50 61MQ60 66A/50~60V FEATURES ° Hermetically Sealed Case ° High Reliability Device ° Low Forward Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 60 Volts Types Available MAXIMUM RATINGS \ type Voltage Rating

61MQ40

Abstract: J245
Contextual Info: SCHOTTKY BARRIER DIODE 61MQ40 66A/40V FEATURES ° Hermetically Sealed Case 0 High Reliability Device ° Low Forward Power Loss, High Efficiency » High Surge Capability • 30 Volts through 60 Volts Types Available MAXIMUM RATINGS \TYPE Voltage Rating 61MQ40

Contextual Info: I , ,• In te rn a tio n a l X O R I Rectifier P D - 9.1646/ p r e lim in a r y IR F 7 5 2 1 D 1 FE TKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • N-Channel HEXFET • Low V p Schottky Rectifier • Generation VTechnology

61MQ60

Abstract: 61MQ50
Contextual Info: SCHOTTKY BARRIER DIODE 61MQ50 61MQ60 66A/50—60V FEATURES “ Hermetically Sealed Case ° High Reliability Device °'Low Forward Power Loss, High Efficiency « High Surge Capability ° 30 Volts through 60 Volts Types Available Dimensions in mm Inches Approx. Net Weight :18 Grams

Q002

Abstract: PE60Q04N
Contextual Info: SCHOTTKY BARRIER DIODE MODULE PE60Q04N 66A/40V FEATURES « Three - Arms, Cathode Common to Base Plate » Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability MAXIMUM R A T IN G S \ type Voltage Rating PE60Q04N - Unit Symboles.

PC60Q04N

Abstract: ARM40
Contextual Info: SCHOTTKY BARRIER DIODE MODULE PC60Q04N 66A/4ov FEATURES ° Dual - Cathode Common to Base Plate » Low Forward Voltage Drop » Low Power Loss, High Efficiency « High Surge Capability MAXIMUM R A T IN G S " \ type Voltage Rating PC60Q04N - Unit Symbol Repetitive Peak.

61MQ30

Abstract: ed 76a
Contextual Info: SCHOTTKY BARRIER DIODE 61MQ30 66A/30V FEATURES ° Hermetically Sealed Case 0 High Reliability Device “ Low Forward Power Loss, High Efficiency • High Surge Capability ° 30 Volts through 60 Volts Types Available MAXIMUM R A T IN G S \ type Voltage Rating

61MQ40

Contextual Info: SCHOTTKY BARRIER DIODE 61MQ40 66A/40V FEATURES 17.31.68 16.7 661 » Hermetically Sealed Case ° High Reliability Device ° Low Forward Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 60 Volts Types Available f M6X1.0 / r 2.21087) ll-fl.45)

60KQ40E

Abstract: 60KQ40B
Contextual Info: SCHOTTKY BARRIER DIODE 60KQ30E 60KQ40E 60KQ30B 60KQ40B 66A/30— 40V FEATURES oSimilar to TO-247AC TO-3P Case » Low Forward Voltage Drop " Low Power Loss, High Efficiency ° High Surge Current Capability ° 10 Volts thru 60 Volts Types Available 1. ^ 1.049)

PC60QL02N

Abstract: PC60QL03N 151E3
Contextual Info: SCHOTTKY BARRIER DIODE MODULE PC60QL02N PC60QL03N 66A/2 o ~ sov FEATURES Dual r-Cathode Common to Base Plate ®Extremely Low Forward Voltage Drop ® Low Power L o s s , High Efficiency ° High Surge Capability MAXIMUM RATINGS ^\TYPE ♦ PC60QL02N Voltage Rating

61MQ40

Abstract: diode 66a J245
Contextual Info: SCHOTTKY BARRIER DIODE 61MQ40 66A/40V FEATURES » Hermetically Sealed Case * High Reliability Device ° Low Forward Power Loss, High Efficiency « High Surge Capability c 30 Volts through 60 Volts Types Available * M 6 X 1.0 / Dimensions in mm INches Approx. Net Weight : 18 Grams

Contextual Info: SCHOTTKY BARRIER DIODE MODULE PC60Q04N 66A/4ov FEATURES ° Dual - Cathode Common to Base Plate ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency « High Surge Capability MAXIMUM RATINGS \ type Voltage Rating P C 6 0 Q 0 4N - Unit Symbol^v. Repetitive Peak