DIODE 65A Search Results
DIODE 65A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 |
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Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
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Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 |
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Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 65A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SEMICONDUCTOR E65A2CBS, E65A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=65A. POLARITY E65A2CBS + Type E65A2CBR (- Type) K H MAXIMUM RATING (Ta=25℃) CHARACTERISTIC |
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e65a2cbse65a2cbr35ing100ma+1 | |
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Contextual Info: SEMICONDUCTOR E65A2CBS, E65A2CBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. POLARITY E65A2CBS + Type E65A2CBR (- Type) K H MAXIMUM RATING (Ta=25 CHARACTERISTIC ) E I |
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e65a2cbse65a2cbr100ma100ms | |
E65A27VBR
Abstract: E65A27VBS 20v zener diode
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e65a27vbse65a27vbr100ma100ms+1 | |
alternator diode
Abstract: 20v zener diode
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e65a21vbse65a21vbr100ma100ms+2 | |
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Contextual Info: SEMICONDUCTOR E65A21VBS, E65A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 21V Typ. POLARITY E65A21VBS (+ Type) E65A21VBR (- Type) K H MAXIMUM RATING (Ta=25 |
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e65a21vbse65a21vbr100ma100ms | |
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Contextual Info: SEMICONDUCTOR E65A37VBS, E65A37VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A Average Forward Current : IO=65A. Zener Voltage : 37V Typ. POLARITY E65A37VBS (+ Type) E65A37VBR (- Type) K H MAXIMUM RATING (Ta=25 |
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e65a37vbse65a37vbr100ma100ms | |
2835 diode
Abstract: 32V zener
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e65a37vbse65a37vbr100ma100ms+2 | |
alternator diode
Abstract: E65A27VBR E65A27VBS
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e65a27vbse65a27vbr100ma100ms+1 | |
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Contextual Info: SEMICONDUCTOR E65A27VBS, E65A27VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=65A. ・Zener Voltage : 27V Typ. POLARITY E65A27VBS (+ Type) E65A27VBR (- Type) K H MAXIMUM RATING (Ta=25℃) |
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e65a27vbse65a27vbr100ma100ms | |
byp303
Abstract: C67047-A2253-A2 BYP 303
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140nso-218c67047-a2253-a2byp303+1 | |
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Contextual Info: MT 70 65A-UR 3mm Visible Light Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS Ta=25 |
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Byp303Contextual Info: SIEMENS BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type BYP 303 Vrrm 1200V Jfrms 65A írr Package Ordering Code 140ns TO-218AD C67047-A2253-A2 Maximum Ratings Parameter Symbol Mean forward current Values 6=av f c = 90 °C, D = 0.5 |
OCR Scan |
140nso-218adc67047-a2253-a221value+2 | |
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Contextual Info: SIEMENS BYP 303 FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Arrivi ^FRMS frr Package Ordering Code BYP 303 1200V 65A 140ns TO -218 AD C67047-A2253-A2 Maximum Ratings Param eter Symbol Mean forward current /fav 7q = 90 ° C ,D = 0 .5 |
OCR Scan |
140nsc67047-a2253-a2 | |
Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
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OCR Scan |
thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+6 | |
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australia heat sink
Abstract: Industrial Microphotonics Company ARR04P3600
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arr04p3600785-1064nm------360tlaser2000+3 | |
laser diode array
Abstract: ASM01P050 Laser Diode 808 nm 5w
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asm01p050785-1064nm------50wlaser2000+3 | |
laser diode array
Abstract: ARR21P300 300W Laser Diode for cutting 300w power diode
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arr21p300785-1064nm250hz------300w+4 | |
ASM03P100Contextual Info: 100W QCW Laser Diode Array Submodule Part Number: ASM03P100 SILVER BULLET TM • Packaged 2 Bar Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS |
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asm03p100785-1064nm------100wd-10/01 | |
heat exchanger
Abstract: laser diode array ASM03P100 100W diode
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asm03p100785-1064nmheat exchangerlaser diode array+1 | |
150W LASER DIODE
Abstract: ASM05P150 Industrial Microphotonics
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asm05p150785-1064nm150wtlaser2000+3 | |
150W LASER DIODE
Abstract: laser diode array ASM05P150 Laser Diode for cutting
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asm05p150785-1064nm------150wd-10/01+3 | |
ARR21P300Contextual Info: Industrial Microphotonics Company 300W QCW Laser Diode Array Part Number: ARR21P300 A PACKAGE • Packaged 6-Bar Laser Diode Array · Patented MicroStackTM Technology · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS |
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arr21p300785-1064nm250hzlaser2000+1 | |
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Contextual Info: SEMICONDUCTOR E65A27VBS, E65A27VBR T E C H N I C A L DATA ST A C K S ILICO N DIFFUSED DIODE A L T E R N A T O R DIODE FOR A U T O M O T IV E A PPLICATION. FEA TU RES • Average Forward C u rre n t: ]0=65A. • Zener Voltage : 27V Typ. POLARITY E65A27VBS ( + Type) |
OCR Scan |
e65a27vbse65a27vbr45oltag | |
ASM01P050
Abstract: ASM01
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asm01p050785-1064nm------50wd-10/01+1 | |