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    DIODE 646 ON Search Results

    DIODE 646 ON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE 646 ON Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    JANTX1N6776

    Abstract: 1N6774 1N6775 1N6776 1N6777 JAN1N6774 JANTX1N6774
    Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 February 2008. INCH-POUND MIL-PRF-19500/646E 26 November 2008 SUPERSEDING MIL-PRF-19500/646 D 25 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,


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    MIL-PRF-19500/646E MIL-PRF-19500/646 1N6774 1N6777, MIL-PRF-19500. JANTX1N6776 1N6775 1N6776 1N6777 JAN1N6774 JANTX1N6774 PDF

    50t65

    Abstract: bd650 BD644
    Contextual Info: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.


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    BD644; BD650; O-220 BD643, BD645, BD647, BD651. BD644 50t65 bd650 BD644 PDF

    Contextual Info: Philips Components Data sheet status P ro d u ct s p e c ific a tio n date of issue April 1991 BDS644/646/648/650/652 PNP silicon Darlington power transistors PINNING -SO T223 DESCRIPTION PNP silicon epitaxial base transistors in a m onolithic Darlington circu it in a


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    BDS644/646/648/650/652 OT223) BDS643/645/647/649/651. BDS644 BDS646 BDS648 BDS650 BDS652 PDF

    D 1991 AR

    Abstract: lg bd645 transistor d 1991 ar BD644 philips BD650 BD643 B0645 BD644 B0643 BD649 philips
    Contextual Info: BD644; 646; 648 _ jj^ BD650; 652 PHILIPS INTERNATIONAL SbE D • 711GÛ2b 7b7 M P H I N 'V - 3 3 - 3 SILICON DARLINGTON POWER TRANSISTORS PN P epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TCJ-220


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    BD644; BD650 T-33-3Ã TCJ-220 BD643, BD645, BD647, BD649 BD651. BD644 D 1991 AR lg bd645 transistor d 1991 ar BD644 philips BD643 B0645 B0643 BD649 philips PDF

    Contextual Info: LJ r iU UH7yl I—J ^ 4 r l L i ’D “7 / |_ | Z1' C A / H h l l O O H D j r i l J f S ix c o n tro l in p u ts enable th is device to be used as a latch ed | transceiver, u n la tc h e d tra nsceiver, o r a c o m b in a tio n o f b o th . As a latch ed tra nsceiver, data fro m on e bus is stored f o r la te r


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    PDF

    D 1991 AR

    Abstract: BD644 transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645
    Contextual Info: J BD644; 646; 648 ^B P 6 5 0 ; 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T0-220 envelope and intended for applications such as audio output stages, switching, and general amplifiers.


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    BD644; BD650; T0-220 BD643, BD645, BD647, BD649 BD651. BD644 D 1991 AR transistor 648 transistor bd650 transistor bd644 b0651 BD65 BD651 lms-21 BD645 PDF

    linfinity

    Abstract: SM600 SM645 SM645K SM646 pic 645
    Contextual Info: SM645/SM646/SM647 SWITCHING REGULATOR POWER OUTPUT STAGES DESCRIPTION FEATURES The SM645/646/647 series of Power Output Stages are especially designed to be driven with standard PWM integrated circuits to form an efficient switching power supply. The SM645,


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    SM645/SM646/SM647 SM645/646/647 SM645, SM646 SM647 SM645K SM645HRK SM646K SM646HRK linfinity SM600 SM645 SM645K pic 645 PDF

    D 1991 AR

    Abstract: BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode
    Contextual Info: BD644; 646; 648 _ j \ BD650^652_ PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b □ D M E C144 7 b 7 H P H I N T -33-31 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Darlington circuit. They are housed in a T 0 -2 2 0


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    BD644; BD650 711002b BD643, BD645, BD647, BD651. BD644 BD650; D 1991 AR BD852 transistor d 1991 ar TRansistor 648 DIODE 646 on 651 diode PDF

    BD 650

    Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
    Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


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    PDF

    smd npn darlington

    Abstract: smd .652 BDS644 BDS646 BDS648 BDS650 BDS652 IEC134
    Contextual Info: Philips Components Data sheet status Product specification date of issue April 1991 BDS644/646/648/650/652 PNP Silicon Darlington power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 PNP Silicon epitaxial base transistors in a monolithic Darlington circuit in a


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    BDS644/646/648/650/652 OT223) BDS643/645/647/649/651. BDS644 BDS646 BDS648 BDS650 BDS652 smd npn darlington smd .652 BDS644 BDS646 BDS648 BDS650 BDS652 IEC134 PDF

    652 smd

    Abstract: BDS650 IR P 648 H BDS644 BDS646 BDS648 BDS652
    Contextual Info: PHILIPS INTERNATIONAL SbE » • 71iaâSb~0GM31SS M73 mTtmT Philips Components Data sheet status P rod uct specification date of issue April 1991 B D S 6 4 4 /6 4 6 /6 4 8 /6 5 0 /6 5 2 PNP Silicon Darlington power transistors PIN N IN G - SOT223 DESCRIPTIO N


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    711002b bds644/646/648/650/652 OT223) BDS643/645/647/649/651. BDS644 BDS646 BDS648 BDS650 BDS652 652 smd IR P 648 H PDF

    microcontroller based temperature control fan

    Abstract: 12V FAN CONTROL BY USING THERMISTOR 5V FAN CONTROL BY USING THERMISTOR temperature based fan speed control temperature based fan speed control using microcontroller 12V -fan speed control using thermistor simple temperature controlled fan using thermistor FAN CONTROL BY USING THERMISTOR simple temperature controlled fan DIODE 646 on
    Contextual Info: INTERFACING TELCOM'S FAN SPEED CONTROLLERS TO THE I2C BUS APPLICATION NOTE 51 INTERFACING TELCOM'S FAN SPEED CONTROLLERS TO THE I2C BUS AN-51 By Paul Paglia INTRODUCTION nal drive signal and RPM sense circuitry. The TC642/646 are designed to provide speed control for a power supply


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    AN-51 TC642/646 TC643 TC642 DS1803 IN4148 TC642 TC646 AN51-02 microcontroller based temperature control fan 12V FAN CONTROL BY USING THERMISTOR 5V FAN CONTROL BY USING THERMISTOR temperature based fan speed control temperature based fan speed control using microcontroller 12V -fan speed control using thermistor simple temperature controlled fan using thermistor FAN CONTROL BY USING THERMISTOR simple temperature controlled fan DIODE 646 on PDF

    Contextual Info: QSFCT646T, 648T, 2646T, 2648T High Speed CMOS 8-bit Bus Interface Register Transceivers Q Q S54/74FC T646T qs54/74fct648t S ssJ^Fci^si FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static


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    QSFCT646T, 2646T, 2648T S54/74FC T646T qs54/74fct648t 74F646/8 74FCT646/8 74FCT646T/8T MIL-STD-883 PDF

    6206a

    Abstract: mcc501 MDK630
    Contextual Info: Product Brief Thyristor & Diode Modules March 2013 – Issue 4 Features and benefits IXYS UK’s range of isolated base pressure contact thyristor and diode modules, designed to industry standard outlines is perfect for


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    150A113Â ISO9001Â 6206a mcc501 MDK630 PDF

    Contextual Info: flUALTTY S E M I C O N D U C T O R INC 41E D • 7Mbfcifl03 O O O Q T O b T B 2 S I QSFCT646T, 648T, 2646T, 2648T High Speed CMOS 8-bit Bus Interface Register Transceivers Q T -5 % -3 D -D % QS54/74FCT646T QS54/74FCT648T QS54/74FCT2646T QS54/74FCT2648T FEATURES/BENEFITS


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    7Mbfcifl03 QSFCT646T, 2646T, 2648T QS54/74FCT646T QS54/74FCT648T QS54/74FCT2646T QS54/74FCT2648T 74F646/8 74FCT646/8 PDF

    2646D

    Abstract: QS32383 QS3383
    Contextual Info: QSFCT646T, 648T, 2646T, 2648T QS54/74FCT646T QS3383 QS54/74FCT648T QS32383 QS54/74FCT2646T QS54/74FCT2648T* High Speed CMOS High Speed CMOS 8-BitBus BusExchange Interface RegisterSwitches Tranceivers Q FEATURES/BENEFITS • Pin and function compatible to the 74F646/8


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    QSFCT646T, 2646T, 2648T QS54/74FCT646T QS3383 QS54/74FCT648T QS32383 QS54/74FCT2646T QS54/74FCT2648T* 74F646/8 2646D QS32383 QS3383 PDF

    Contextual Info: W lÆ ▼i V ^ /* /W Product Features: |j í 7 /I ^ • PI74FCT646T/648T/6 51T/652T/2646T/2652T is pin compatible with bipolar FAST Series at a higher speed and lower power consumption • 250 series resistor on all outputs FCT2XXX only • TTL input and output levels


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    PI74FCT646T/648T/6 51T/652T/2646T/2652T 24-pin PI74F CT646T/648T/651T/652T PI74FCT2646T/2652T 500ft PDF

    on 648

    Contextual Info: QSFCT646T, 648T, 2646T, 2648T Q H g h . .y i. 8 - B R it S p e e d B u s e g is t e r C M O S q s 5 4 /7 4 646 t 2646 t f c t QS54/74FCT648T I n t e r f a c e T r a n c e iv e r s q s s 3 4 /7 4 f c t QS54/74FCT2648T* FEATURES/BENEFITS • Pin and function compatible to the 74F646/8


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    QSFCT646T, 2646T, 2648T QS54/74FCT648T 74F646/8 74FCT646/8 74FCT646T/8T QS54/74FCT2648T* MDSL-00024-02 on 648 PDF

    a325l

    Contextual Info: ÖUALITY SEMICONDUCTOR INC bSE D • 74t.bäG3 Q D G 1 2 b S 7b4 QSFCT646T, 648T, 2646T, 2648T Q S54/74FC T646T FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static ■ Available in DIP, ZIP, SOIC, QSOP, LCC


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    QSFCT646T, 2646T, 2648T S54/74FC T646T 74F646/8 74FCT646/8 74FCT646T/8T MIL-STD-883 2648C a325l PDF

    SN74LS260

    Abstract: SN74LS260D SN74LS260DR2 SN74LS260N
    Contextual Info: SN74LS260 Dual 5-Input NOR Gate VCC 14 13 12 11 10 9 8 http://onsemi.com 1 2 3 4 5 6 LOW POWER SCHOTTKY 7 GND GUARANTEED OPERATING RANGES Symbol VCC Parameter Supply Voltage Min Typ Max Unit 4.75 5.0 5.25 V 25 70 °C TA Operating Ambient Temperature Range


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    SN74LS260 SN74LS260DR2 SN74LS260D SN74LS260N r14525 SN74LS260/D SN74LS260 SN74LS260D SN74LS260DR2 SN74LS260N PDF

    Contextual Info: Q S High-Speed CMOS 8-Bit Bus Interface Register Transceivers u a l it y e m ic o n d u c t o r , I n c . QS54/74FCT646T QS54/74FCT2646T FEATURES/BENEFITS DESCRIPTION • Pin and function compatible to the 74F646 74FCT646 and 74FCT646T • Industrial temperature -40°C to 85°C


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    QS54/74FCT646T QS54/74FCT2646T 74F646 74FCT646 74FCT646T MIL-STD-883, 2646T DSL-00024-05 PDF

    SN74LS86

    Abstract: SN74LS86N SN74LS86D
    Contextual Info: SN74LS86 Quad 2-Input Exclusive OR Gate VCC 14 13 12 11 10 9 http://onsemi.com 8 LOW POWER SCHOTTKY 1 2 3 4 5 6 7 GND TRUTH TABLE IN OUT A B Z L L H H L H L H L H H L 14 1 PLASTIC N SUFFIX CASE 646 GUARANTEED OPERATING RANGES Symbol VCC Parameter Supply Voltage


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    SN74LS86 SN74LS86D SN74LSEUROPE: r14153 SN74LS86/D SN74LS86 SN74LS86N SN74LS86D PDF

    SN74LS38

    Abstract: SN74LS38D SN74LS38N
    Contextual Info: SN74LS38 Quad 2-Input NAND Buffer VCC 14 13 12 11 10 9 * 8 * 1 2 http://onsemi.com * LOW POWER SCHOTTKY * 3 4 5 6 7 GND * OPEN COLLECTOR OUTPUTS GUARANTEED OPERATING RANGES Symbol VCC Parameter Supply Voltage Min Typ Max Unit 4.75 5.0 5.25 V 25 70 °C TA Operating Ambient


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    SN74LS38 SN74LS38D SN74LS38N r14153 SN74LS38/D SN74LS38 SN74LS38D SN74LS38N PDF

    sn74ls00n pin out

    Abstract: SN74LS00 SN74LS00N sn74LS00 datasheet SN74LS00D sn74LS00 gate
    Contextual Info: SN74LS00 Quad 2-Input NAND Gate • ESD > 3500 Volts VCC 14 13 12 11 10 9 8 http://onsemi.com LOW POWER SCHOTTKY 1 2 3 4 5 6 7 GND GUARANTEED OPERATING RANGES Symbol VCC Parameter Supply Voltage Min Typ Max Unit 4.75 5.0 5.25 V 25 70 °C TA Operating Ambient


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    SN74LS00 SN74LS00D SN74LS00N r14153 SN74LS00/D sn74ls00n pin out SN74LS00 SN74LS00N sn74LS00 datasheet SN74LS00D sn74LS00 gate PDF