DIODE 60 31 Search Results

BZX88

Abstract: BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C2V7
Contextual Info: MICRO-E SILICON PLANAR HIGH-SPEED SW ITCHING DIODES Ratings and Characteristics at 2 5 °C ambient temperature Type BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 Description Max. Vrw m Volts 60 Single diode 30 Single diode Single diode 15 60 Common cathode diode pair

LED660N-66-60

Contextual Info: LED660N-66-60 TECHNICAL DATA High Power LED Array, 60 chips AlGaInP LED660N-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaInP diode chips, mounted on a metal stem TO-66 with AIN ceramics

MB11A02

Abstract: thyristor cs3 MB11A06 cs3 thyristor thyristor tt 142 n
Contextual Info: POüJEREX INC "TÏ TETMbEl D0D1Ö35 S D T-S lZ - H C-Series Fast Single Diode Modules Vrrm IFSM trr typical VlSOL (Amps) (°C) (Volts) (Amps) (fisec) (Vrms) Package 20 20 20 50 50 50 100 100 100 200 300 121 121 121 105 105 105 60 60 60 60 60 600 1000 1200

Contextual Info: HUR2x30-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x30-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255

Contextual Info: HUR2x60-60 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP VRSM V 600 HUR2x60-60 Symbol VRRM V 600 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255

sonic cleaner

Contextual Info: DH 60 Advanced Technical Information IFAVM = 64 A VRRM = 1400-1800 V trr = 150 ns Fast Recovery Diode SONIC series VRSM VRRM V V 1400 1600 1800 1400 1600 1800 Type C A TO-247 AD C DH 60-14A DH 60-16A DH 60-18A A A = Anode, C = Cathode Conditions Maximum Ratings

60-04A

Contextual Info: DSEP 60-04A HiPerFREDTM Epitaxial Diode IFAV = 60 A VRRM = 400 V trr = 30 ns with soft recovery VRSM VRRM V V 400 400 Type A C TO-247 AD C DSEP 60-04A A C TAB A = Anode, C = Cathode, TAB = Cathode Symbol Conditions Maximum Ratings IFRMS IFAVM TC = 120°C; rectangular, d = 0.5

9V bridge rectifier ic

Abstract: 60-16NO1 ixys vub 70 -16
Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads

6002A

Contextual Info: DSEK 60 Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 IFAVM = 2x 34 A VRRM = 200 V = 35 ns trr ISOPLUS 247TM TO-247 AD Type Version A A DSEK 60-02A DSEK 60-02AR C A Version AR A C A A C A C (TAB) A = Anode, C = Cathode Symbol

ixys 60-02

Abstract: G 839 DIODE 60-02A
Contextual Info: Common Cathode Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 200 200 DSEK 60 IFAVM = 2x 34 A VRRM = 200 V = 35 ns trr TO-247 AD Type ISOPLUS 247TM Version A A DSEK 60-02A DSEK 60-02AR C A A C A Version AR C (TAB) A C A TAB A = Anode, C = Cathode

BAT60J

Abstract: BAT60JFILM ED6A
Contextual Info: BAT60J SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS • ■ ■ ■ ■ A VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE K 60 DESCRIPTION Schottky barrier diode encapsulated in a SOD-323

ed5a

Abstract: ED 03 Diode BAT60J
Contextual Info: BAT60J  SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS • ■ ■ ■ ■ A VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE K 60 DESCRIPTION Schottky barrier diode encapsulated in a SOD-323

powerex cd

Contextual Info: POWEREX INC 1SE D m 72T4bSl 00Ü34S1 3 • 7^-25-23 fOMÆYlEY CD4B _ 60 C D 4C 60 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 92 5-7272 Powerex Europe, S. A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode

KTM 7

Abstract: ASE grinding
Contextual Info: POWEREX INC 1SE D 7ST4b21 nmmsx. Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 0003445 fl CD42 60 CD47 fcO SCR/Diode POW-R-BLOK Modules 60 Amperes/100-1400 Volts

FSA2719M

Abstract: FSA2510 MONOLITHIC DIODE ARRAYS FSA2619M FSA2619P FSA2510M FSA2719P FSA2508P FSA2510P FSA2720P fsa2509m
Contextual Info: FAIRCHILD DIODES DIODES M O NO LITH IC DIODE ARRAYS NUMERIC LISTING (Cont'd) PLASTIC - CERAMIC - METAL PACKAGES Item DEVICE NO. BV V Min V Max vF @ if id A AVp mV Max Vr ns Min Configuration Package No. 1 FSA2503M 60 1.0 100 15 10 2M8 TO-116 2 FSA2503P 60

Contextual Info: STTA6006P STTA12006TV1/2 TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If a v 60 A / 2 x 60 A V rrm 600V trr (typ) 45ns V f (max) 1.5V K2 A2! K1 A1 A2 K1 3 HE K2 A1 STTA12006TV1 STTA12006TV2 ISOTOP™ SOD93 STTA6006P FEATURES AND BENEFITS

DSEC59

Contextual Info: DHG 60 C 600 HB preliminary V RRM = 600 V I FAV = 2x 30 A t rr = 40 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications:

7490 pin out diagram

Abstract: 16980 Q95-Q
Contextual Info: STV7610A PLASMA DISPLAY PANEL DATA DRIVER FEATURE • ■ ■ ■ ■ ■ ■ ■ ■ 96 OUTPUTS PLASMA DISPLAY DRIVER 100 V ABSOLUTE MAXIMUM SUPPLY 5 V SUPPLY FOR LOGIC 60/50 mA SOURCE/SINK OUTPUT MOS 60/50 mA SOURCE/SINK OUTPUT DIODE 6 bit CASCADABLE DATA BUS 20 MHz

Contextual Info: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 2 Features MOSFET T Symbol Conditions

5SDD

Abstract: 31K6000 5SDD 31K6000 dt 92 abb 31k600
Contextual Info: 5SDD 31K6000 5SDD 31K6000 Old part no. DV 889B-3100-60 High Voltage Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Explosive protection Key Parameters V RRM = 6 000 I FAVm = 3 097

Contextual Info: Si7742DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Si7742DP

Abstract: 68718
Contextual Info: Si7742DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0035 at VGS = 10 V 60 0.0045 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 34 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: VRM = 600 V, IF AV = 60 A, trr = 100 ns(max.) Fast Recovery and High Power Diode CTNS-4606S Features Package The CTNS-4606S is a high power diode of the low-noise and low loss which realize a peak reverse voltage of 600 V. Typical forward voltage drop of 1.15

NXP SMD ZENER DIODE MARKING CODE

Abstract: 771-BZX100A115 Zener diode smd marking codes sod323
Contextual Info: BZX100A Single Zener diode Rev. 01 — 30 May 2007 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diode in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power dissipation: ≤ 60 W