DIODE 6.6A RECTIFIER Search Results
DIODE 6.6A RECTIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CRG10A |
|
General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG09B |
|
General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG11B |
|
General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG09A |
|
General-purpose diode, 400 V, 1 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG04A |
|
General-purpose diode, 600 V, 1 A , Rectifier Diode, S-FLAT | Datasheet |
DIODE 6.6A RECTIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier |
Original |
irf6215pbf-150vo-220o-220ab+1 | |
diode 6.6A rectifierContextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier |
Original |
irf6215pbf-150vo-220o-220ab+2 | |
diode 66aContextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier |
Original |
irf6215pbf-150vo-220o-220ab+2 | |
irf6215pbfContextual Info: PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -150V RDS on = 0.29Ω G Description ID = -13A S Fifth Generation HEXFETs from International Rectifier |
Original |
irf6215pbf-150vo-220o-220ab+1 | |
|
Contextual Info: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance |
Original |
pd-94165ao-257aairf5y6215cm-150v+1 | |
|
Contextual Info: PD-94165A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance |
Original |
pd-94165ao-257aairf5y6215cm-150v+1 | |
IRF5Y6215CMContextual Info: PD - 94165 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance |
Original |
o-257aairf5y6215cm-150v | |
|
Contextual Info: PD -9.1479A International IGR Rectifier IRF6215 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated V dss = -150V ROS on = 0.29Q |
OCR Scan |
irf6215-150vo-220 | |
IRF6215Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier |
Original |
91479birf6215-150vo-220 | |
|
Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier |
Original |
91479birf6215-150vo-220+1 | |
|
Contextual Info: P D -9 1 4 7 9 B International Iör Rectifier IRF6215 HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated Description V dss = •"! 50V RüS on = 0.29Î2 |
OCR Scan |
irf6215 | |
IRF6215Contextual Info: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier |
Original |
91479birf6215-150vo-220 | |
|
Contextual Info: PD - 91643 International IGR Rectifier IRF6215S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology Surface Mount IRF6215S Low-profile through-hole (IRF6215L) 1 7 5 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated |
OCR Scan |
irf6215s/lirf6215sirf6215l | |
|
Contextual Info: PD - 91749 International IQ R Rectifier IRFR/U6215 PRELIMINARY HEXFET Power MOSFET • P-Channel • 175°C Operating Temperature • Surface Mount IRFR6215 • Straight Lead (IRFU6215) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated |
OCR Scan |
irfr6215irfu6215irfr/u6215-150v | |
|
|
|||
IRFR6215PBF
Abstract: IRFR6215 IRFU6215
|
Original |
pd-95080airfr6215pbfirfu6215pbfirfr6215+5 | |
IRFR6215
Abstract: IRFU6215
|
Original |
pd-95080airfr6215pbfirfu6215pbfirfr6215+5 | |
|
Contextual Info: PD-95080A IRFR6215PbF IRFU6215PbF P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = -150V |
Original |
pd-95080airfr6215pbfirfu6215pbfirfr6215+4 | |
irf 940
Abstract: 600-RG IRF 860
|
Original |
irfr/u6215pbfirfr6215irfu6215-150v+6 | |
|
Contextual Info: PD - 97564 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant |
Original |
||
|
Contextual Info: PD - 97564 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant |
Original |
auirf6215-150v | |
|
Contextual Info: AUTOMOTIVE GRADE PD-96302A AUIRFR6215 HEXFET Power MOSFET Features l P-Channel l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant |
Original |
pd-96302aauirfr6215-150v | |
marking code AARContextual Info: International IO R Rectifier P D - 9.1506 PRELIMINARY 1RFR/U9024N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Voss = -55V Surface Mount IRFR9024N Straight Lead (IRFU9024N) Advanced Process Technology Fast Switching Fully Avalanche Rated ^ D S (o n ) |
OCR Scan |
irfr9024nirfu9024n1rfr/u9024neia-481+1 | |
U9024N
Abstract: BSS 250 IRFR P-Channel MOSFET
|
OCR Scan |
irfr9024nirfu9024n1rfr/u9024n4a5545e+4 | |
AEC-Q101-005
Abstract: AUIRF
|
Original |
auirf6215s-150vaec-q101-005auirf | |