DIODE 5H Search Results

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Abstract: 5H MARKING CMBD1201 CMBD1202 CMBD1203 CMBD1204 CMBD1205 CMBD4148 CMBQ1204
Contextual Info: CDU CMBD1201, CMBD1202, CMBD1203 CMBD1204, CMBD1205, CMBD4148 SILICON PLANAR EPITAXIAL fflGH SPEED DIODES CMBD1201, 1202, CMBD4148 are ail single diodes CMBQ1204 is a dual diode, common cathode CMBD1203 is a dual diode, in series CMBD1205 is a dual diode, common anode

smd diode 5H

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SWITCHING DIODE CMBD4148 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 2 1 Marking CMBD4148 = 5H High Speed Switching Diode

DIN 16901 130

Abstract: DIN ISO 2768-M DIN 16901 FS300R12KE3 DIN ISO 2768
Contextual Info: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

FP15R12NT3

Contextual Info: Technische Information / technical information FP15R12NT3 IGBT-Module IGBT-modules EconoPIM 1 mit schnellem Trench-Feldstop IGBT und EmConHE-Diode mit offenem Emitter EconoPIM™1 with fast trench-fieldstop IGBT and EmConHE-diode with open emitter IGBT-Wechselrichter / IGBT-inverter

d0109

Abstract: sanken power transistor FMEN-210A 210A
Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters

ZENER 18- 2 5t

Abstract: marking code zener diode 5D Zener Diode marking 5T ZENER DIODE 5K
Contextual Info: BZT52C2V4K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A —Wide zener voltage range selection : 2.4V to 75V —Surface device type mounting —Moisture sensitivity level 1 —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: Technische Information / technical information BSM600GA120DLCS IGBT-Module IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

SMD diode MARKING 5h

Abstract: Diode smd 5H smd code marking 5h smd diode 5H "SMD Code" 15 smd 5H transistor CMBD914N3 N3 smd
Contextual Info: Spec. No. : C303N3 Issued Date : 2003.04.12 Revised Date Page No. : 1/4 CYStech Electronics Corp. High –speed switching diode CMBD914N3 Description The CMBD914N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package.

FDLL4148

Abstract: MMSD4148 fairchild make f 32 diode DATE CODE FAIRCHILD sod123 diode 5H FAIRCHILD DIODE
Contextual Info: MMSD4148 General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a SOD-123 Surface Mount package makes it desirable also as a general purpose diode. • Compact surface mount with same footprint as mini-melf.

5d surface mount diode mmbd4148

Abstract: 5d surface mount diode MMBD4148 ON 820
Contextual Info: WEITRON MMBD4148 Surface Mount Switching Diode SWITCHING DIODE 200mAMPERS 100VOLTS Features: *High Speed 4ns *Low Rever Leakage Current *Small Outline Surface Mount SOT-23 Package 3 1 2 SOT-23 SOT-23 Outline Dimensions Unit:mm A B TOP VIEW E G C D H K J WEITRON

Zener diode smd marking 5j

Abstract: MM5Z3V9 smd zener diode code 5F
Contextual Info: Formosa MS SMD Zener Diode MM5Z2V4 THRU MM5Z75V List List. 1 Package outline. 2 Features. 2

marking e1 diode

Abstract: marking d6 DIODE marking A2 Diode d4 marking 5h marking E1 MMBD4148A MMBD4148CA MMBD4148CC MMBD4148SE
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SWITCHING DIODE SOT—23 FEATURES MMBD4148A Marking:5H MMBD4148CA Marking:D6 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage

S20LC60

Abstract: S20LC60US
Contextual Info: Super Fast Recovery Diode mtm OUTLINE Twin Diode S20LC60US U n i t : 111111 Package : M TO -3P Weight x lg (T y p 600V 20A : Feature • High Voltage Super FRD •^ ¡Ü Œ F R D • Low Noise • trr=25ns • trr=25ns • 0jcöVJ'£U • Small ßjc

Contextual Info: MMSD4148 MMSD4148 Top Marking: 5H SOD123 Color Band Denotes Cathode Top Marking: 5H SOD123 BAND DENOTES CATHODE. Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage

MARKING 5H

Abstract: "MARKING 5H" MMSD4148 sod123 diode 5H
Contextual Info: MMSD4148 MMSD4148 Top Marking: 5H SOD123 COLOR BAND DENOTES CATHODE Top Marking: 5H SOD123 BAND DENOTES CATHODE. High Conductance Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBD4148

Abstract: 5h sot-23
Contextual Info: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBD4148 Features • • • Low Current Leakage Low Cost Small Outline Surface Mount Package 500mW 100 Volt Silicon Epitaxial Diode C Pin Configuration Top View 5H SOT-23

Contextual Info: SLD303XT SONY. 5 0 0 m W High Power Laser Diode D e s c rip tio n Package O u tlin e U n it : m m S L D 3 0 3 X T is a ga in-guided, h ig h -p o w e r laser diode w ith a built-in TE cooler. A new fla t, square package w ith a low th e rm a l resistance and an in-line pin

L-55REIR1C

Contextual Info: L-55XEIRXX 5.0mm INFRARED EMITTING DIODE ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?O2@@@@6Xg? ? ? ? W-X?hf?O2@@@@6Kh? ? ?@@@@@@@6Kg? W-X?hf? @@gW2@ h? @@@@@@@@@@@?f? ?@@@@@@@@@6Xf? 7@1?hf? W2@@@@@@@ X?f? 7@1?hf? @@@@@@@@@@@?f?

Contextual Info: Connection Diagram 4148 4148SE 3 3 3 3 5H 2 1 1 4148CC MARKING 5H MMBD4148CA D6 MMBD4148 MMBD4148CC D5 MMBD4148SE D4 SOT-23 2 1 1 2 3 3 2 1 1 4148CA 2 Small Signal Diode Absolute Maximum Ratings * Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage

Contextual Info: ¥i mm? ▼ BAW27 _ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications

BAW76

Contextual Info: T em ic BAW76 Semiconductors Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current

IR5H

Abstract: diode ir01
Contextual Info: MCL4154 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4154 • Micro Melf package Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage

EFE300

Abstract: LAMBDA CSS150 EFE300M
Contextual Info: EFE300M Series 300W 3x6" Medical Power Supplies ‹ ‹ ‹ ‹ ‹ Medical Safety Certifications BF Rated Fully Featured - including ORing Diode Universal Input (90 - 264VAC) Peak Loading (10s) Suitable for 1U applications Key Market Segments & Applications

MMDL770T1G

Abstract: MMBD770T1 marking code 5H diode
Contextual Info: MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high-efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features •     http://onsemi.com