DIODE 4J Search Results

t3031

Abstract: ET-T3031 14j6 Scans-0017298 general electric 14jg8
Contextual Info: n r m iM iiM e !4JG8 1 4 JG 8 ELECTRONICS "-!*> *! DUPLEX-DIODE TRIODE - 12-61 DESCRIPTION AND RATING = - - - FO R D ET EC T O R A N D A F V O L T A G E-A M P LIFIER A P P L IC A T IO N S The 14JG8 is a duplex-diode, high-mu triode with separate cathodes for each of the diode sections and the triode

DIN 16901 130

Abstract: DIN ISO 2768-M DIN 16901 FS300R12KE3 DIN ISO 2768
Contextual Info: Technische Information / technical information FS300R12KE3 IGBT-Module IGBT-modules - EconoPACK + Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode - EconoPACK™+ with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

8fc marking code

Abstract: 8bc regulator CMSZ5221B CMSZ5222B CMSZ5223B CMSZ5224B CMSZ5225B CMSZ5226B CMSZ5227B CMSZ5228B
Contextual Info: Central CMSZ5221B THRU CMSZ5261B TM Semiconductor Corp. SURFACE MOUNT SUPERmini 275mW SILICON ZENER DIODE 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial, entertainment and

CMSD4448

Abstract: marking code MS SOT323 sot323 marking code ms marking r4 diode sot 323 marking code MS switching diode
Contextual Info: Central CMSD4448 TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM HIGH SPEED SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded SUPERminiTM surface mount

GW45HF60WD

Abstract: 45hf60 gw45hf60 STGW45HF60WDI 45HF60WD 45HF60WDI STGWA45HF60WDI STGW45HF60WD schematic diagram for welding induction gw45hf60wdi
Contextual Info: STGW45HF60WDI 45 A, 600 V ultra fast IGBT with low drop diode Features • Improved Eoff at elevated temperature ■ Low VF soft recovery antiparallel diode Applications ■ Welding ■ Induction heating ■ Resonant converters 2 3 1 TO-247 Description The STGW45HF60WDI is based on a new

Contextual Info: ESJA 8 6 24kv Outline Drawings HIGH VOLTAGE SILICON DIODE E S JA 8 6 is high reliability resin molded type high voltage diode in small size package w hich is sealed a multilayed mesa type silicon chip by epoxy re sin . • ¡I# # : Features • f i'M ! Supersm all size

zener diode E7

Abstract: diode e7
Contextual Info: ZMD 1 . ZMD 100 1W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module 4 B + ;   ?   Absolute Maximum Ratings Symbol Conditions Surface mount diode  ?   

Contextual Info: CFSH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH-4 is a high quality Schottky Diode designed for applications where ultra small size and power dissipation are prime requirements. Packaged in a Tiny Leadless Package ,

Contextual Info: SLD301XT SONY. lO O m W High Power Laser Diode Description S L D 3 0 1 X T is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by

CMYTVS5-2

Contextual Info: CMYTVS5-2 SURFACE MOUNT SILICON LOW CAPACITANCE 5 VOLT, 2-LINE TVS/DIODE ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMYTVS5-2 is a 2-line TVS/Diode array packaged in the SOT-543 surface mount case. This device, with its low capacitance,

avalanche photodiode ingaas ghz

Contextual Info: N EC ELECTRONI CS INC bZE ]> • b427S5S Ga 3 û l 3 1 Ô1S H N E C E DATA SHEET NEC PHOTO DIODE NDL5520C ELECTRON DEVICE 2 .5 Gb/s OPTICAL FIBER COMMUNICATIONS 050 Mm InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5520C is an InGaAs Avalanche Photodiode especially designed for a detector of 25 Gb/s optical fiber communication

CMSD2004S

Abstract: d2 diode series PD 275 diode marking r5
Contextual Info: Central CMSD2004S TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM DUAL, SILICON SWITCHING DIODES SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process,

MMBD501

Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2

Contextual Info: 30E D • b457s2s N E C / \"°1 1 ■ EL E CTRONICS INC LASER DIODE NDL5004P 1 300 nm O P T IC A L F IB E R C O M M U N IC A T IO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE MODULE D E S C R IP T IO N N D L 5 0 0 4 P is an In G a A sP Laser D io d e M o d u le especially designed for long distance high capacity transm ission systems. T he

marking lt

Abstract: IC 2803 2SD2028 D148M
Contextual Info: Ordering number: EN 2803 No.2803 // 2SD2028 NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amp Applications Features - With Zener diode 11 ± 3V between collector and base - Large current capacity •Low collector to emitter saturation voltage

marking lt

Abstract: 2SD2028 IC 2803
Contextual Info: Ordering number: EN 2803 No.2803 // 2SD2028 NPN Epitaxial Planar Silicon Transistor Low-Frequency Power Amp Applications Features - With Zener diode 11 ± 3V between collector and base - Large current capacity •Low collector to emitter saturation voltage

1N6642

Abstract: LE17 MIL-PRF19500 QR217 l2d diode
Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available

1N750A

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: 500mW ZENER DIODE 1N750AD1 Standard ±5% Zener Voltage Tolerance. Hermetic Ceramic Surface Mount Package. Space Level and High-Reliability Screening Options Available. • • • ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VF IZM IZSM PT

1N4148

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: 500mW ZENER DIODE 1N6328DLCC2 • • • Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Surface Mount Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated PT TJ TSTG TSP

LE17

Abstract: MIL-PRF19500 QR217 1N5806-DLCC2 1n5806d
Contextual Info: ULTRAFAST RECOVERY RECTIFIER DIODE 1N5806DLCC2 • Hermetic Ceramic Package Designed as a DropIn Replacement for D-5A MELF Package • Designed For High Reliability Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tamb = 25°C unless otherwise stated

zener diode SMD marking code 27 4F

Abstract: Zener diode smd marking 5j Zener diode smd marking 4p smd diode 27 5j diode 5d smd Diode smd 5j Zener diode smd marking code 63 6E SMD CODE diode marking code 4n smd marking 5R
Contextual Info: MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features 1 Cathode 2 Anode Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design

Zener diode smd marking 5j

Abstract: Zener diode smd marking 4p zener diode SMD marking code 27 4F zener smd marking 4X smd diode 27 5j smd diode ZENER marking 4R zener diode 5d SMD smd marking code 4Z smd zener diode code 5F MM1Z120
Contextual Info: MM1Z2V0~MM1Z120 SILICON PLANAR ZENER DIODES Silicon planar zener diode in a small plastic SMD SOD-123 package PINNING DESCRIPTION PIN Features 1 Cathode 2 Anode Total power dissipation: max. 500 mW Small plastic package suitable for surface mounted design

SML05SC12D3

Abstract: LE17 MIL-PRF19500 QR217 schottky rectifier diode
Contextual Info: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12D3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching

1N4565

Abstract: 6.4v zener diode temperature compensated zener diode 8251 1N4565A 1N4566 1N4566A 1N4567 1N4567A 1N4568
Contextual Info: 6.4V TEMPERATURE COMPENSATED ZENER DIODE 1N4565 - 1N4584ADLCC2 • Hermetic Ceramic Surface Mount Package • 6.4V ±5% Reference Voltage • Stable over a wide temperature range • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated