DIODE 447 Search Results

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

thyristor code

Abstract: 1KHZ thyristor thyristor h 250 tb 15 R216CH12FJO Anti-Parallel Thyristor
Contextual Info: lllfESTCODE SEMICONDUCTORS * Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazaidous materials. Integral water cooled unit available.

Contextual Info: GLP-447 5-300 mW Portable Blue Diode Laserpointer Portable 447nm diode laserpointer, featuring push button, compact size, and long lifetime. Specifications Wavelength Output Power Transverse Mode Operating Mode Beam Divergence full angle Beam Diameter (at the aperature)

Contextual Info: RLTMDL-447 1-500 mW Blue Laser Diode Modul Blue diode laser module at 447nm is made features of ultra compact, long lifetime, low cost and easy operating, which is used in measurement, communication, spectrum analysis, etc. Specifications Wavelength Output Power

DIODE BJE

Abstract: Philips diode variable capacitance diode oas top marking c3 sot23 A562 BBY40 "Variable Capacitance Diode" Variable Capacitance Diode
Contextual Info: bTE D N AMER PHILIPS/DISCRETE • ^53^31 0G2t>447 TET H A P X Product specification Philips Semiconductors_ BBY40 Variable capacitance diode DESCRIPTION The BBY40 is a variable capacitance diode in a plastic SO T23 envelope. It is intended for

Westcode thyristor

Abstract: WESTCODE TB R216CH12FJO 1KHZ thyristor thyristor T 95 F 700 SM12CXC190 back to back thyristor module thyristor 910 R216CH12 westcode diodes S
Contextual Info: WESTCODE SEMICONDUCTORS« »«-»» Isolated Base Power Modules Available as DOUBLE THYRISTOR, THYRISTOR/DIODE, DIODE/THYRISTOR, DOUBLE DIODE. Features compression mounted ceramic units ensuring hermeticity. Isolation 2.5KV RMS using non-hazardous materials. Integral water cooled unit available.

Contextual Info: GLP-III-447 5-1000 mW Portable Blue Diode Laser System Portable 447nm Diode Laser System for professional application, featuring 4-way safety system, catch button for convenient operation, and LED status indicator 4-way safety system: 1. 2. 3. 4. slideable front cover

BB135

Abstract: smd DIODE code marking Q UHF variable capacitance diode marking S "Variable Capacitance Diode"
Contextual Info: ^ 53^ 31 Philips Semiconductors □ Q Z b 3 cì ‘ì APX 447 Preliminary specification BB135 UHF variable capacitance diode bTE » " " " N AUER PHILIPS/DISCRETE QUICK REFERENCE DATA DESCRIPTION The BB135 is a silicon, double-implanted variable capacitance diode in planar

4245

Abstract: SMD M1B BAT56 SMD M1B diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

smd diode 708

Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed

Contextual Info: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be

Contextual Info: Part: SMBJ400A Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature

Contextual Info: Part: SMBJ400C Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature

SVC364

Contextual Info: Ordering number :EN4275A SVC364 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic

SVC351

Abstract: 4565l
Contextual Info: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be

SVC364

Contextual Info: Ordering number :EN4275A SVC364 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic

Contextual Info: Part: SMBJ400 Series: SMBJ Series - 600W Surface Mount TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Maximum Reverse Leakage Current IR 5.00 PROTECTS AGAINST: Maximum Temperature

Contextual Info: Part: 5KP6.5 Series: 5000W Axial Leaded TVS Diode - 5KP Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2000.00 Maximum Temperature Max Temp (°C )

AN4839

Abstract: DS2106SY DS2106SY35 DS2106SY36 DS2106SY37 DS2106SY38 DS2106SY39 DS2106SY40 4190A
Contextual Info: DS2106SY DS2106SY Rectifier Diode Replaces October 2001 version, DS4182-5.0 DS4182-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 3830A IFSM APPLICATIONS 62500A ■ Rectification ■ Freewheel Diode

DS2106SY

Abstract: DS2106SY35 DS2106SY36 DS2106SY37 DS2106SY38 DS2106SY39 DS2106SY40
Contextual Info: DS2106SY DS2106SY Rectifier Diode Replaces October 2001 version, DS4182-5.0 DS4182-5.1 December 2001 FEATURES KEY PARAMETERS • Double Side Cooling VRRM 4000V ■ High Surge Capability IF AV 3830A IFSM APPLICATIONS 62500A ■ Rectification ■ Freewheel Diode

Contextual Info: Part: 5KP6.5C Series: 5000W Axial Leaded TVS Diode - 5KP Series Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2000.00 Maximum Temperature Max Temp (°C )

Contextual Info: Ordering number :EN3048B SVC363 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be

cd3100

Abstract: EN3048 SVC363 EN3048B
Contextual Info: Ordering number :EN3048B SVC363 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be