DIODE 445 Search Results

Contextual Info: 1N 4454 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode Fast switching diode Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted. Parameter

Contextual Info: 1N 4454 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 100V Forward Current 150mA Features ‹ Silicon Epitaxial Planar Diode ‹ Fast switching diode Mechanical Data ‹ Case: DO-35 Glass Case ‹ Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics

BAP51-02

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

DIODE A6 sod110

Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Contextual Info: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation

BA792

Abstract: top mark smd Philips Diode smd code 805 SMD MARKING 541 DIODE 279-27 smd diode marking kda marking code kda smd code marking 777 smd diode marking 77 S4 SMD diode mark
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

SMD diode sg 46

Abstract: SMD diode sg 03
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

ULV-445-300

Contextual Info: ULV-445-300 Blue Laser Diode Module ULV-445-300 is a 445nm blue diode laser module with TTL modulation capability featuring high power, compact size, and low price. Specifications Wavelength Output Power Input Voltage Operating Mode Cooling Transverse Mode

diode a62

Abstract: BAP51-03 diode smd ED 74 lm 9805
Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance

Contextual Info: ULV-445-600 Blue Laser Diode Module ULV-445-600 is a 445nm blue diode laser module with TTL modulation capability featuring high power, compact size, and low price. Specifications Wavelength Output Power Input Voltage Operating Mode Cooling Transverse Mode

ZLLS400

Abstract: ZLLS400TA ZHCS400 ZLLS400TC
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

ULV-445-700

Contextual Info: ULV-445-700 Blue Laser Diode Module ULV-445-700 is a 445nm blue diode laser module with TTL modulation capability featuring high power, compact size, and low price. Specifications Wavelength Output Power Input Voltage Operating Mode Cooling Transverse Mode

ZLLS400

Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

smd code marking A8 diode

Abstract: smd diode A8 smd diode code a8
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance

en2617b

Contextual Info: Ordering number:EN2617B _ SVC342 Diffused Junction Type Silicon Diode V aractor Diode for AM Receiver Electronic T uning Use Features •Twin type varactor diode for low-voltage A M electronic tuning use. •High capacitance ratio. •Excellent linearity of C-V characteristic.

smd schottky diode marking 72

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic

GB25RF120K

Contextual Info: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics

SVC342

Contextual Info: Ordering number :EN2617B SVC342 Diffused Junction Type Sillicon Diode Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.

NEC JAPAN 567

Abstract: NX8563LF PX10160E
Contextual Info: DATA SHEET LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain

str 6707

Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic

SVC341

Abstract: EN2618B 4550L
Contextual Info: Ordering number :EN2618B SVC341 Diffused Junction Type Sillicon Diode Varactor Diode for Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.

1PS59SB20

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection

SVC342

Contextual Info: Ordering number :EN2617B SVC342 Diffused Junction Type Silicon Diode Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Twin type varactor diode for low-voltage AM electronic tuning use. · High capacitance ratio. · Excellent linearity of C-V characteristic.

601 Opto isolator

Abstract: NX8563LF PX10160E
Contextual Info: LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).