DIODE 424 Search Results

BD304

Abstract: SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A
Contextual Info: SXX175UF3A SXX200UF3A SXX225UF3A SXX250UF3A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4241, Rev- HERMETIC ULTRAFAST DIODE Description: 3Amp, 20nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Data communication and telecommunications system equipment

transistor C 4242

Abstract: SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A
Contextual Info: SXX175UF-A SXX200UF-A SXX225UF-A SXX250UF-A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4242, Rev- HERMETIC ULTRAFAST DIODE Description: 1Amp, 15nS diode in hermetic package Applications / Markets: • Switch-mode power supply • Datacommunication and telecommunication system equipment

Contextual Info: UC1612 UC3612 y ^ UNITRODE Dual Schottky Diode FEATURES DESCRIPTION • The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. Monolithic Two Diode Array Exceptional Efficiency

SVC321SPA

Abstract: varactor diode AM EN699H 3881 AM receiver 6993
Contextual Info: Ordering number :EN699H SVC321SPA Diffused Junction Type Sillicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC321SPA is a varactor diode with a good linearity and high capacitance raito that is capable of

Contextual Info: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage

DIODE DATABOOK

Abstract: FLYBACK CLAMPING DIODE UC1612 UC3612
Contextual Info: UC1612 UC3612 Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array • Exceptional Efficiency The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. • Low Forward Voltage

Contextual Info: UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection

Contextual Info: INTEGRATED CIRCUITS u im UC1610 UC2610 UC3610 UNITRODE Dual Schottky Diode Bridge FEATURES DESCRIPTION Monolithic Eight-Diode Array This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection

Contextual Info: UC1610 UC2610 UC3610 UNITROOE Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection

PLCC-20

Abstract: SOIC-16 UC1610 UC2610 UC3610
Contextual Info: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection

Contextual Info: UC1610 UC2610 UC3610 Dual Schottky Diode Bridge FEATURES DESCRIPTION • Monolithic Eight-Diode Array • Exceptional Efficiency This eight-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. The dual bridge connection

Contextual Info: y mumt UC1611 UC3611 UNITRODE Quad Schottky Diode Array FEATURES DESCRIPTION Matched, Four-Diode Monolithic Array This four-diode array is designed for general purpose use as individual di­ odes or as a high-speed, high-current bridge. It is particularly useful on

Schottky Diode 50V 3A

Abstract: diode 716
Contextual Info: UC1612 UC3612 U IM IT R O D E . Dual Schottky Diode FEATURES DESCRIPTION • Monolithic Two Diode Array The two-diode array is designed for high-current, low duty-cycle applica­ tions typical of flyback voltage clamping for inductive loads. • Exceptional Efficiency

Contextual Info: y IN T E G R A T E D C IR C U IT S UC1612 UC3612 UNITRODE Dual Schottky Diode FEATURES DESCRIPTION Monolithic Two Diode Array The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads.

Schottky Diode 50V 3A

Abstract: quad schottky diode array Schottky Diode 40V 5A bridge Schottky Diode 40V 5A linear databook motor forward reverse diagram power Schottky bridge UC3611 3A, 50V BRIDGE DIODE DATABOOK
Contextual Info: UC1611 UC3611 Quad Schottky Diode Array FEATURES DESCRIPTION • Matched, Four-Diode Monolithic Array • High Peak Current • Low-Cost MINIDIP Package • Low-Forward Voltage This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on

Contextual Info: UC1611 UC3611 Quad Schottky Diode Array FEATURES DESCRIPTION • Matched, Four-Diode Monolithic Array • High Peak Current • Low-Cost MINIDIP Package • Low-Forward Voltage This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on

Contextual Info: IN T E G R A T E D C IR C U IT S UC1612 UC3612 U N IT R O D E Dual Schottky Diode DESCRIPTION FEATURES The two-diode array is designed for high-current, low duty-cycle applications typical of flyback voltage clamping for inductive loads. Monolithic Two Diode Array

699h

Contextual Info: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of

4245

Abstract: SMD M1B BAT56 SMD M1B diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current

c3611

Contextual Info: y _ UC1611 UC3611 U N IT R O O E Quad Schottky Diode Array FEATURES DESCRIPTION • Matched, Four-Diode Monolithic Array • High Peak Current • Low-Cost MINIDIP Package This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on

smd diode 708

Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed

C532 diode

Abstract: b16/41289
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

Contextual Info: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code

BT 69D

Abstract: FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data