DIODE 4150 Search Results

618 diode

Abstract: LL4150
Contextual Info: 1N 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data Case: DO-34, DO-35 Glass Case

diode 648

Abstract: 1N4150 648 diode DIODE WITH SOD CASE
Contextual Info: L L 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the DO-35 case with the type designation 1N4150. Mechanical Data Case: MiniMELF Glass Case SOD-80

Contextual Info: 1N 4150 Small-Signal Diode Fast Switching Rectifier Features ‹ Silicon Epitaxial Planar Diode ‹ For general purpose and switching ‹ This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data

Contextual Info: L L 4150 Small-Signal Diode - Fast Switching Rectifier Reverse Voltage 50V Forward Current 200mA Features ‹ Silicon Epitaxial Planar Diode ‹ For general purpose and switching ‹ This diode is also available in other case styles including the DO-35 case with the type designation 1N4150.

Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGPS40B120UD

Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Contextual Info: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
Contextual Info: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

4148

Abstract: diode 4148 in 4148 DIODE D16 in 4148 PIN DIAGRAM 4148 diode 4148 diode datasheet MAX 4148 D16-4148 D16-4150
Contextual Info: D16-4148 and 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 D16-4150 Switching Diode Array FEATURES • • • 8 Diode Array Standard 16 pin Dual-In-Line Package UL 94V-0 Flammability Classification MECHANICAL • • •

MFU DIODE

Abstract: PH 4149 DD130F DD130F-100 DD130F-160 so130
Contextual Info: SANSHA ELECTRIC MFG CO 37E D n ? 2M3 / DIODE MODULE 0000102 A B S E M J T-ZZ-C? S a n R e x Power Diode Module DD130F series are designed for various rectifier circuits. DD130F has two diode chips connected in series in a package and the mounting base is

Contextual Info: Central CM PD 4150 Sem icon du ctor Corp. HIGH CURRENT HIGH SPEED SW ITCHING DIODE DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CM PD4150 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface

diode 4148

Abstract: marking S16 EIA-481-B MSC0881 S16-4148 S16-4150 MARKING CODE S16 EIA-481-B 13"
Contextual Info: S16-4148, e3 and 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 S16-4150, e3 Switching Diode Array FEATURES • • • • 8 Diode Array SOIC 16 pin Surface Mount Package UL 94V-0 Flammability Classification RoHS compliant by adding “e3” suffix (S16-4148e3 or S16-4150e3)

marking s8 diode

Abstract: diode 4148 in 4148 PIN DIAGRAM 86 soic-8 datasheet ic 7805 MSC0881 s8 marking EIA-481-B S8-4148 S8-4150
Contextual Info: S8-4148, e3 and 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 S8-4150, e3 Switching Diode Array FEATURES • • • • 4 Diode Array SOIC 8 pin Surface Mount Package UL 94V-0 Flammability Classification RoHS compliant by adding “e3” suffix (S8-4148e3 or S8-4150e3)

4R3TI60Y-080

Abstract: thyristor 5a thyristor 50V 60A THYRISTOR 800v 5A 60A diode
Contextual Info: 4R3TI60Y-080 DIODE & THYRISTOR MODULE Outline Drawings, mm 800V / 60A DIODE & THYRISTOR MODULE Features • Glass Passivation Chip · Easy Connection · Insulated Type · Large di/dt · Large dv/dt Applications · Inverters · Battery Chargers · DC Motors

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

E72445

Abstract: Diode SCR 100AMP SCR diode k1 f1892sd1200
Contextual Info: series F18 25-100Amp • Diode, SCR/Diode Modules Modules come in an industry standard package, offering nine circuits that can be used singly or as power control building blocks. All models feature highly efficient thermal management for greatly extended cycle life and are UL

Contextual Info: DIODE MODULE DWF R 50A30/40 DWF R 50A is a non-isolated diode module designed for 3 phase rectification. IF AV 50A, VRRM 400V Easy Construction with Joint-Cathode F Type and Joint-Anode R type. Non-isolated. Mounting Base as terminals. High Surge Capability

diode 4150

Contextual Info: DIODE MODULE DWF R 50A30/40 DWF R 50A is a non-isolated diode module designed for 3 phase rectification. IF AV 50A, VRRM 400V Easy Construction with Joint-Cathode F Type and Joint-Anode R type. Non-isolated. Mounting Base as terminals. High Surge Capability

Contextual Info: DIODE MODULE DWF R 50A30/40 DWF （R） 50A is a non-isolated diode module designed for 3 phase rectification. ● IF （AV） ＝50A, VRRM＝400V Construction with Joint-Cathode（F） Type and Joint-Anode （R） type. ● Non-isolated. （Mounting Base as terminals.）

tc122 25 6

Abstract: tc122 25
Contextual Info: DIODE MODULE DWF R 50A30/40 DWF （R） 50A is a non-isolated diode module designed for 3 phase rectification. ● IF （AV） ＝50A, VRRM＝400V Construction with Joint-Cathode（F） Type and Joint-Anode （R） type. ● Non-isolated. （Mounting Base as terminals.）

Contextual Info: O rdering num ber: EN 5100 No.5100 /I _ FP108 SA iYO, TR : PN P Epitaxial Planar Silicon T ransistor SBD : Schottky B arrier Diode DC/DC Converter Applications F e a tu re s •Composite type with a PN P transistor and a Schottky b arrier diode contained in one packge,

Contextual Info: SANSHA ELECTRIC MF G CO 37E D B ? SM3 □□□□IDE 6 B S E M J T-23- OD130F MODULE SanRex Pow er Diode Module DD130F series are designed for various rectifier circuits. DD130F has two diode chips connected in series in a package and the mounting base is

Contextual Info: DIODE MODULES Ratings and Specifications Í m iímíiibíI 600 volts class general use diode modules/E series Dovicu ty p i’ V rrm V rsm lo Ifsm Ft V fm Irrm Rth j-C Package Volts Volts Amps. Amps. A2s Volts mA °C/W . 6RI30F 060 600 660 30 360 520 1.10

LT 2806

Abstract: trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12
Contextual Info: z r — •$? • y — h NEC X " f y 3- > 'J $'<4 K Switching Diode 1SS123 w .n & M x t ° ^ = ¥ v 7 7; u i i v f; = i > ^ 7 ; u ^ y ^ - - k w & T s 'iv + y v m Silicon Epitaxial Double Diode (Series Connected) High Speed Switching W& / PACKAGE DIMENSIONS