DIODE 409 20A Search Results

r157 diode

Abstract: HE1aN-DC100V E43028 ASCTB183E 30A250V
Contextual Info: VDE TV-10/TV-15 rated 1a 30A, 2a 20A power relays HE HE RELAYS FEATURES 4. Compatible with all major safety standards UL, CSA, VDE and TÜV certified 5. Terminals are available 1. Excellent resistance to contact welding Owing to the pre-tension and kick-off

Contextual Info: HE VDE TV-10/TV-15 rated 1a 30A, 2a 20A power relays HE RELAYS FEATURES 4. Compatible with all major safety standards UL, CSA, VDE and TÜV certified 5. Terminals are available 1. Excellent resistance to contact welding Owing to the pre-tension and kick-off

24v 20a operating time of less than 10ms relays

Abstract: HE1aN 12V 30A Relay HE1aN-DC24V schematic diagram tv panasonic r157 diode schematic diagram for industrial ovens LR26550 TV-15 HE1aN-P-DC12V
Contextual Info: HE VDE TV-10/TV-15 rated 1a 30A, 2a 20A power relays HE RELAYS FEATURES 4. Compatible with all major safety standards UL, CSA, VDE and TÜV certified 5. Terminals are available 1. Excellent resistance to contact welding Owing to the pre-tension and kick-off

r157 diode

Abstract: HE2aN-DC24V HE2aN-S-DC24V HE1aN-AC100V HE1AN-DC12V Relay 6V, 30A HE2aN-S-AC200V TV-15 HE1AN-Q-DC12V HE1aN-DC24V
Contextual Info: VDE TV-15, 30 AMP 1 Form A Power Relay HE HE RELAYS FEATURES 4. Compatible with all major safety standards UL, CSA, VDE and TÜV certified 1. Excellent resistance to contact welding Owing to the pre-tension and kick-off mechanism, the 1 Form A passes TV-15

b 1370

Abstract: IRFI540N ISD 1400 d IRF540N 4.5v to 100v input regulator
Contextual Info: PD - 9.1361A IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G Description ID = 20A

Contextual Info: PD - 9.1361A IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G Description ID = 20A

b 1370

Abstract: 4.5v to 100v input regulator IRF540N IRFI540N
Contextual Info: PD - 9.1361A IRFI540N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G Description ID = 20A

JH2a

Abstract: JH RELAY Matsushita 10A 250 AC DC24V jh1a-l2
Contextual Info: VDE 30 AMP POWER RELAY WITH SPACE SAVING DESIGN JH RELAYS FEATURES 56 2.205 33 1.299 35.8 1.409 mm inch • Many safety-oriented characteristics incorporated Contact gap: more than 3 mm .118 inch for 1 Form A and 2 Form A Breakdown voltage for N.O. contact:

r157 diode

Abstract: 48V DC to 12v dc 40 amp TV-15 R1575
Contextual Info: VDE TV-15, 30 AMP 1 Form A Power Relay HE HE RELAYS FEATURES 4. Compatible with all major safety standards UL, CSA, VDE and TÜV certified 1. Excellent resistance to contact welding Owing to the pre-tension and kick-off mechanism, the 1 Form A passes TV-15

r157 diode

Abstract: HE2aN-DC24V HE2aN-AC100V
Contextual Info: VDE TV-15, 30 AMP 1 Form A Power Relay HE HE RELAYS FEATURES 4. Compatible with all major safety standards UL, CSA, VDE and TÜV certified 1. Excellent resistance to contact welding Owing to the pre-tension and kick-off mechanism, the 1 Form A passes TV-15

The subcircuit model was extracted and optimized

Abstract: SUB45N03
Contextual Info: SPICE Device Model SUB45N03 N-Channel 30-V D-S , 175°C MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse

61-1200

Abstract: relay 24v 20a TV-15 110v to 5v dc schematic r157 diode schematic diagram for industrial ovens vending machine schematic diagram
Contextual Info: VDE TV-15, 30 AMP 1 Form A Power Relay HE HE RELAYS FEATURES 1. Excellent resistance to contact welding Owing to the pre-tension and kick-off mechanism, the 1 Form A passes TV-15 and the 2 Form A passes TV-10. 2. High-capacity and long life 1 Form A Plug-in type

SUP45N03-13L

Abstract: 13L diode
Contextual Info: SPICE Device Model SUP45N03-13L Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

schematic diagram inverter 12v to 24v 30a

Abstract: sine wave pv inverter circuit diagram 3 phase Ac to dc inverter welding schematic diagram solar pv inverter schematic 5v dc to 110v ac 400 hz inverter relay 5v 30a inverter welding machine circuit board 12v dc 240v ac inverter circuit diagram schematic diagram welding inverter control schematic diagram inverter 24V to 12v 30a
Contextual Info: VDE TV-15, 30 AMP 1 Form A Power Relay HE RELAYS FEATURES TYPICAL APPLICATIONS 1. Excellent resistance to contact welding Owing to the pre-tension and kick-off mechanism, the 1 Form A passes TV-15 and the 2 Form A passes TV-10. 2. High-capacity and long life

9446 diode

Abstract: "solid state relay" crydom 2657 mosFET
Contextual Info: EL Series The Global Expert in Solid State Relay Technology EL Series ABOUT US Crydom, a brand of Custom Sensors & Technologies CST and global expert in Solid State Relay Technology, has a distinguished record of providing high quality, world class Solid State Relay and Control Products

PC792A

Contextual Info: Automotive Plug-In / PCB Power Relay PC792A FEATURES Most popular automotive relay 1 A and 1 C contact forms available Contact switching capacity up to 120 Amps 40 Amps continuous carrying capacity Up to 125 degrees C operating temperature Internal diodes or resistors available

IRFI840G

Abstract: IRFIZ46N IRFZ46N IRFZ46N equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1306B IRFIZ46N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω

IRFI840G

Abstract: IRL3303 IRLI3303
Contextual Info: PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V RDS on = 0.026Ω ID = 25A Description

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

IRFI840G

Abstract: IRL3303 IRLI3303
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLI3303 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 30V

fgh80n60

Abstract: FGH80N60FD FGH80N60FDTU 247A03 fairchild igbt to247
Contextual Info: FGH80N60FD 600 V Field Stop IGBT Features General Description • • • • • Using novel field stop IGBT technology, Fairchild 's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and

diode 10a 400v

Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

TRANSISTOR BIPOLAR 400V 20A

Abstract: C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.