DIODE 400V 6A Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

HFA80NC40C

Contextual Info: PD -2.473 rev. B 01/99 HFA80NC40C TM Ultrafast, Soft Recovery Diode HEXFRED VR = 400V Features VF typ. ƒ = 1V • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A

HFA75MC40C

Abstract: IRFP250
Contextual Info: PD -2.474A HFA75MC40C Ultrafast, Soft Recovery Diode HEXFRED TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 400V VF(typ.)ƒ = 1V IF(AV) = 75A

2475A

Abstract: D-60 HFA75MB40C IRFP250
Contextual Info: PD -2.475A HFA75MB40C HEXFRED Ultrafast, Soft Recovery Diode TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 400V VF(typ.)ƒ = 1V

HFA80NC40CSL

Abstract: SLD61-8
Contextual Info: PD -2.472 rev. B 01/99 HFA80NC40CSL TM Ultrafast, Soft Recovery Diode HEXFRED VR = 400V VF typ. ƒ = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 190A/µs Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of

HFA80NC40CSM

Contextual Info: PD -2.471 rev. B 01/99 HFA80NC40CSM TM HEXFRED Ultrafast, Soft Recovery Diode VR = 400V VF typ. ƒ = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.)ƒ = 190A/µs Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of

HFA80NK40C

Abstract: IRFP250
Contextual Info: PD -2.470A HFA80NK40C HEXFRED Ultrafast, Soft Recovery Diode TM BASE COMMON CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters 1 ANODE 1 2 COMMON CATHODE 3 ANODE 2 VR = 400V VF typ. ƒ = 1V IF(AV) = 80A

6A4 DIODE

Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
Contextual Info: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004

Contextual Info: SQ.i.p.sa Square In-line Package Bridge Diode • Avalanche type O U T L IN E D IM E N S IO N S D5FBDZ 400V 6A Unit ^ mm Weight - 18g ■ R A TIN G S A bsolute Maximum R atings IB # a m ~ ~ ~ ~ ~ ~ — -T yp e l H —— — H Z. Symbol p C ond itions

Contextual Info: IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C IC = 10A, TC = 100°C G tsc > 5µs, Tjmax = 175°C E VCE on typ. = 1.7V @ 6A n-channel Applications • Appliance Drives • Inverters

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: TM FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQB6N40CF

Abstract: FQB6N40CFTM
Contextual Info: FRFET TM FQB6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

FQP6N40CF

Contextual Info: FQP6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 16nC)

FQPF Series

Abstract: MOSFET 400V FQP6N40CF FQPF6N40CF N-Channel mosfet 400v to220
Contextual Info: FRFET TM FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features Description • 6A, 400V, RDS on = 1.1 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: HARRIS SENICON] SECTOR CIS Ha r r is W SEMICONDUCTOR b6E D • M3Q2S71 Q05025H 413 « H A S HGTP6N40E1D HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Packages Features JEDEC TO-220AB TOP VIEW • 6 Amp, 400 and 500 Volt

N50E

Abstract: TRANSISTOR N50E
Contextual Info: i l i h iA R R is HGTP6N40E1D HGTP6N50E1D SEMICONDUCTOR 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Features Packages JEDEC TO-220AB TOP VIEW • 6 Amp, 400 and 500 Volt • Latch Fra« Operation • Typical Tfall < 1.0^8

G6N50E1D

Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
Contextual Info: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV

Contextual Info: PD-95831 RevB IRAMS06UP60A Series Plug N DriveTM Integrated Power Module for Appliance Motor Drive 6A, 600V Description International Rectifier’s IRAMS06UP60A is an Integrated Power Module developed and optimized for electronic motor control in appliance applications specifically for VF compressor drives for refrigerators and

PD-95831

Abstract: IRAMS06UP60A-2 95831 marking R1E AN-1044 AN1049 IR21365 IRAMS06UP60A 3 phase controller rectifier ic
Contextual Info: PD-95831 RevB IRAMS06UP60A Series 6A, 600V Plug N DriveTM Integrated Power Module for Appliance Motor Drive Description International Rectifier’s IRAMS06UP60A is an Integrated Power Module developed and optimized for electronic motor control in appliance applications specifically for VF compressor drives for refrigerators and

6n40

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching performance and

Contextual Info: PD-95832 RevC IRAMS06UP60B Series Plug N DriveTM Integrated Power Module for Appliance Motor Drive Description 6A, 600V with Internal Shunt Resistor International Rectifier’s IRAMS06UP60B is an Integrated Power Module developed and optimized for electronic motor control in appliance applications specifically for VF compressor drives for refrigerators and